Infineon Technologies CY7C1061GN30-10ZXIT

Overview

CY7C1061GN30-10ZXIT from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply operation, TTL-compatible I/O, and dual chip enable (CE1/CE2) for flexible memory expansion. It supports byte-wide writes via BHE/BLE controls and automatic power-down when deselected, deployed in industrial embedded controllers requiring deterministic low-latency data storage.

For engineers reviewing the CY7C1061GN30-10ZXIT datasheet, CY7C1061GN30-10ZXIT pinout, CY7C1061GN30-10ZXIT application, or CY7C1061GN30-10ZXIT equivalent, key selection criteria include tAA = 10 ns access timing, ISB2 = 20 µA typical standby current, VCC range of 2.2–3.6 V, dual CE architecture, and 48-ball VFBGA (8 × 9.5 × 1 mm) package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a full asynchronous interface with independent byte write enables (BHE/BLE) enabling 8-bit sub-word writes without read-modify-write cycles. Its dual chip enable logic (CE1 LOW + CE2 HIGH = active) allows hierarchical memory banking and seamless expansion beyond 16 Mbit using address mirroring.

The device uses standard CMOS six-transistor memory cells with 1.0 V data retention capability and automatic CE-driven power-down mode that reduces ICC to 20 µA (typ) when deselected-critical for battery-backed systems and low-power industrial monitoring nodes.

Key Specifications

Pinout & Package

48-ball VFBGA (8 × 9.5 × 1 mm, Package Grade ID: BVXI) with 0.5 mm ball pitch; RoHS-compliant, lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV102416BLL-10MLI and MC14LC5517FN, CY7C1061GN30-10ZXIT provides superior byte-select flexibility, lower operating voltage, and modern VFBGA packaging-making it optimal for new industrial and medical designs demanding compact size, low power, and deterministic timing.

Availability

CY7C1061GN30-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, and avionics display memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1061GN30-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and IoT applications.

CY7C1061GN30-10ZXIT belongs to Cypress's high-speed asynchronous SRAM product line, engineered for deterministic low-latency data storage in real-time embedded systems where predictability and reliability outweigh density or cost optimization.

FAQ

What is the maximum clock frequency supported by CY7C1061GN30-10ZXIT?

This is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (tAA = 10 ns), cycle time (tRC = 10 ns), and setup/hold timing for address, CE, WE, and OE. System timing is governed by these parameters-not a clock frequency-enabling direct interfacing with microcontrollers and FPGAs without synchronization logic.

Does CY7C1061GN30-10ZXIT support independent 8-bit writes without read-modify-write?

Yes. The device features dedicated Byte Low Enable (BLE) and Byte High Enable (BHE) inputs. Asserting BLE = LOW writes only I/O0–I/O7; asserting BHE = LOW writes only I/O8–I/O15. Both can be asserted simultaneously for full 16-bit writes, eliminating the need for external masking or destructive read-modify-write sequences.

Can CY7C1061GN30-10ZXIT operate at 1.8 V?

No. The specified minimum VCC is 2.2 V per the datasheet's Operating Range table. While some units may function at 1.8 V, it violates the guaranteed specification and risks timing violations, increased standby current, or data retention failure. Use only within the validated 2.2–3.6 V range for industrial applications.

Is the 48-ball VFBGA package (BVXI) lead-free and RoHS compliant?

Yes. The "X" suffix in BVXI denotes lead-free (Pb-free) construction, and the device complies with RoHS Directive 2011/65/EU. The package uses matte tin finish on solder balls and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) handling requirements.