Infineon Technologies CY7C1062AV33-10BGIT

Overview

CY7C1062AV33-10BGIT from Cypress Semiconductor is a 524,288 × 32-bit (16-Mbit) high-speed CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V operation, and automatic CE power-down mode. It supports byte-selectable read/write via four independent byte enables (BA–BD), operates across –40°C to +85°C industrial temperature range, and is packaged in a 119-ball PBGA for high-density memory subsystems in networking line cards.

For engineers reviewing the CY7C1062AV33-10BGIT datasheet, CY7C1062AV33-10BGIT pinout, CY7C1062AV33-10BGIT application, or CY7C1062AV33-10BGIT equivalent, this page delivers verified timing parameters, validated I/O pin roles, industrial-grade retention behavior at 2.0 V, and direct substitution guidance for SRAM-based buffer and cache designs.

Technical Context

The CY7C1062AV33-10BGIT implements a fully decoded 512K × 32 architecture with separate address (A0–A18), data (I/O0–I/O31), and control (CE1/CE2/CE3, WE, OE, BA–BD) interfaces. Its internal logic supports concurrent byte-level access without bus contention, and its three-chip-enable scheme enables seamless memory expansion up to 128-Mbit systems using standard TTL-compatible signaling.

It features dual power-down modes: ISB1 (TTL-input active CE power-down, 70 mA max) and ISB2 (CMOS-input standby, 50 mA max), both triggered by deassertion of any CE pin. Data retention at 2.0 V is guaranteed for indefinite duration under industrial ambient conditions, and all I/O pins exhibit 8 pF input / 10 pF output capacitance for controlled signal integrity.

Key Specifications

Pinout & Package

Package: 119-ball PBGA (14 mm × 22 mm × 2.4 mm, pitch 1.27 mm), RoHS-compliant (Pb-free per ordering suffix 'T').

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61WV102432BLL-10MLI, the CY7C1062AV33-10BGIT offers superior memory mapping flexibility via triple CE; versus W9825G6JH-10, it guarantees sub-10 ns deterministic access critical for hard real-time control loops.

Availability

CY7C1062AV33-10BGIT is available at Aetrix Electronics and suitable for industrial PLCs, telecom packet buffers, medical imaging subsystems, and baseband signal processors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1062AV33-10BGIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC mixed-signal arrays, and USB/USB-C controllers.

The CY7C1062AV33 belongs to Cypress's high-speed parallel SRAM product line, engineered for deterministic, low-latency data buffering in mission-critical communications and industrial control systems where refresh-free operation and precise timing predictability are mandatory.

FAQ

What is the minimum VCC required to retain data without corruption?

Data retention is guaranteed down to 2.0 V DC at temperatures from –40°C to +85°C, with indefinite hold time as long as VCC remains ≥2.0 V and ambient conditions stay within spec. No external capacitor or backup source is needed - the device enters retention mode automatically upon CE deassertion and VCC drop below 3.0 V.

Can CE1, CE2, and CE3 be tied together for simple operation?

Yes - tying CE1, CE2, and CE3 together reduces the device to a standard two-enable interface (CE and OE), maintaining full functionality. However, doing so forfeits the hierarchical decoding capability and eliminates the ability to implement multi-chip memory banks without external logic.

Is the 119-ball PBGA package compatible with standard reflow profiles?

Yes - the CY7C1062AV33-10BGIT PBGA uses SnAgCu (SAC305) solder and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles with peak temperature ≤260°C and time above liquidus of 60–90 seconds are fully supported.

Does byte enable (BA–BD) affect power consumption during write operations?

Yes - asserting only one byte enable (e.g., BA LOW, BB–BD HIGH) reduces dynamic power by ~25% compared to full 32-bit writes, since only eight I/O drivers switch. Static current remains unchanged, but reduced switching activity lowers total ICC during partial-word updates.