Infineon Technologies CY7C1062DV33-10BGXI

Overview

CY7C1062DV33-10BGXI from Cypress Semiconductor is a 16-Mbit (512K × 32) high-speed CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V operation, and automatic CE power-down mode. It supports byte-selectable 32-bit I/O via four independent byte enables (BA–BD), operates across –40°C to +85°C, and retains data at 2.0 V for low-power hold states - used in industrial control memory buffers and FPGA configuration storage.

For engineers reviewing the CY7C1062DV33-10BGXI datasheet, CY7C1062DV33-10BGXI pinout, CY7C1062DV33-10BGXI application, or CY7C1062DV33-10BGXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 25 mA standby current, 119-ball PBGA package compatibility, and quad-byte enable architecture for partial-word writes in embedded systems with tight power and timing budgets.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive 512K × 32-bit array with three independent chip enables (CE1/CE2/CE3) enabling hierarchical memory mapping and seamless expansion. Its TTL-compatible inputs and outputs allow direct interfacing with legacy microcontrollers without level-shifting.

The device uses automatic CE-based power-down logic: when any CE is HIGH, ICC drops to ISB2 = 25 mA (CMOS mode) or ISB1 = 30 mA (TTL mode), while maintaining full data retention down to VCC = 2.0 V. Byte enable control (BA–BD) allows independent 8-bit write masking per I/O byte group without affecting adjacent bytes.

Key Specifications

Pinout & Package

Package: 119-ball plastic ball grid array (PBGA), 13 mm × 13 mm body, 1.0 mm ball pitch, RoHS-compliant lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61WV102432BLL-10MLI and W9825G6JH-10, the CY7C1062DV33-10BGXI uniquely delivers deterministic 10 ns access with hardware byte masking and triple CE decode - critical for deterministic real-time systems where software-controlled write masking adds jitter or overhead.

Availability

CY7C1062DV33-10BGXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration storage, medical imaging frame buffering, and avionics display controller caching requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for CY7C1062DV33-10BGXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1062DV33 belongs to Cypress's high-speed parallel SRAM product line, engineered for deterministic latency, low-power retention, and robust operation in mission-critical embedded systems with strict timing and reliability requirements.

FAQ

What is the maximum operating frequency supported by CY7C1062DV33-10BGXI?

The device supports up to 100 MHz operation, derived from its 10 ns access time (tAA) and 10 ns read cycle time (tRC). At this rate, it delivers sustained 32-bit parallel throughput of 3.2 GB/s with no wait states, assuming proper signal integrity and load matching per AC test conditions (5 pF, 3 ns edge rates).

Does CY7C1062DV33-10BGXI require external refresh circuitry?

No - it is a true static RAM and requires no refresh cycles. Data remains valid as long as VCC stays within specification (≥2.0 V for retention, ≥3.0 V for active operation) and CE signals remain asserted during access. This eliminates refresh overhead and timing uncertainty present in DRAM or pseudo-SRAM devices.

How does the triple CE architecture improve memory system design?

The CE1/CE2/CE3 inputs allow hierarchical address decoding: CE1 can act as bank select, CE2 as row enable, and CE3 as column gate - enabling efficient use of fewer address lines for large memory maps. This reduces glue logic, simplifies PCB routing, and supports interleaved access patterns across multiple SRAM devices without external demultiplexers.

Can CY7C1062DV33-10BGXI operate with 2.5 V or 5 V I/O interfaces?

No - it is strictly a 3.3 V core device. Inputs are TTL-compatible (VIH = 2.0 V min), allowing safe interfacing with 5 V logic outputs if clamped or series-resisted, but VCC must be 3.3 V ±0.3 V. Driving I/O from 2.5 V sources violates VIH minimum and risks read failures; level shifters are required for 2.5 V host interfaces.