Infineon Technologies CY7C1062G30-10BGXIT

Overview

CY7C1062G30-10BGXIT from Cypress Semiconductor is a 16-Mbit (512 K × 32) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring TTL-compatible I/O, ERR pin for error indication, and automatic CE power-down mode. It serves as high-reliability on-board memory in industrial controllers requiring data integrity under radiation-prone or long-life operation.

For engineers reviewing the CY7C1062G30-10BGXIT datasheet, CY7C1062G30-10BGXIT pinout, CY7C1062G30-10BGXIT application, or CY7C1062G30-10BGXIT equivalent, key selection criteria include ECC-enabled data path integrity, 119-ball PBGA footprint compatibility, 10 ns timing at 3.0 V, and err-flag signaling for host-level fault logging in safety-critical embedded systems.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic adjacent to the 512K × 32 memory array, enabling real-time single-bit error detection and correction without external logic. Its three independent chip enables (CE1/CE2/CE3) support hierarchical memory mapping, while byte-enable pins (BA–BD) allow granular 8-bit writes across four I/O groups.

The device implements automatic power-down when any CE is deasserted, reducing standby current to 20 mA typical. The ERR output asserts high only during active correction events-no auto-write-back occurs, preserving deterministic latency and simplifying host software handling of corrected reads.

Key Specifications

Pinout & Package

Package: 119-ball plastic ball grid array (PBGA), 14 mm × 20 mm body, 1.0 mm ball pitch, bottom-side thermal pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102432BLL-10BLI and 23LC1024-I/P, CY7C1062G30-10BGXIT uniquely delivers integrated ECC with deterministic 10 ns timing and parallel 32-bit throughput-enabling simpler, safer, and faster memory subsystems in industrial and transportation safety applications.

Availability

CY7C1062G30-10BGXIT is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling systems, and medical imaging equipment requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.

Supply support for CY7C1062G30-10BGXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and aerospace applications, emphasizing signal integrity and functional safety.

CY7C1062G30-10BGXIT belongs to Cypress's high-speed ECC SRAM product line, engineered specifically for systems where data integrity must be enforced at the memory layer-not just in software or external logic.

FAQ

Does CY7C1062G30-10BGXIT support automatic error correction during read operations?

Yes-during every read access, the internal ECC decoder checks the retrieved 32-bit word plus associated parity bits. If a single-bit error is detected, it is corrected in real time before data reaches the I/O pins, and the ERR pin asserts high for one clock cycle. No external logic or CPU involvement is required for correction.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that pulses high for one access cycle whenever a single-bit error is corrected. It must be externally pulled up to VCC via a 4.7 kΩ resistor. Host processors can monitor ERR with an interrupt-capable GPIO to log correction events or trigger diagnostics-no debouncing or filtering is needed due to its synchronous assertion.

Can CY7C1062G30-10BGXIT operate at 1.8 V?

No-CY7C1062G30-10BGXIT is rated only for 2.2 V to 3.6 V operation. For 1.65 V–2.2 V operation, the CY7C1062G18 or CY7C1062GE18 variants are specified, both with 15 ns access time. Attempting 1.8 V operation on the G30 variant violates absolute maximum ratings and may result in data corruption or functional failure.

How does the automatic power-down mode interact with the ERR pin and ECC functionality?

When any CE pin is deasserted, the device enters ISB2 standby mode (20 mA typical), disabling all I/O drivers and halting internal array access-but the ECC logic remains inactive and ERR cannot assert. ECC and ERR operation resume only after CE reassertion, WE/OE setup, and a valid access cycle; no state is lost during power-down.