Infineon Technologies CY7C1062GE30-10BGXI

Overview

CY7C1062GE30-10BGXI from Cypress Semiconductor is a 16-Mbit (512 K × 32) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time at 2.2–3.6 V, and dedicated ERR output pin for real-time error indication. It operates in industrial temperature range (–40°C to +85°C) and targets high-reliability memory subsystems in networking control planes and mission-critical embedded controllers.

For engineers reviewing the CY7C1062GE30-10BGXI datasheet, CY7C1062GE30-10BGXI pinout, CY7C1062GE30-10BGXI application, or CY7C1062GE30-10BGXI equivalent, this page delivers verified timing specs, PBGA-119 terminal mapping, ECC behavior under read/write, and validated drop-in alternatives for memory upgrade paths requiring fault-tolerant SRAM.

Technical Context

The CY7C1062GE30-10BGXI implements full-cycle ECC encoding/decoding on every 32-bit word access, correcting single-bit errors without CPU intervention and asserting ERR high during correction. Its three independent chip enables (CE1/CE2/CE3) support flexible bank expansion in multi-module systems.

Byte-enable architecture (BA–BD) allows selective 8-bit writes across four I/O byte lanes (I/O0–7, I/O8–15, I/O16–23, I/O24–31), while automatic CE-driven power-down reduces ISB2 to 20 mA typical when deselected - critical for low-power standby modes in telecom line cards.

Key Specifications

Pinout & Package

Package: 119-ball plastic ball grid array (PBGA), 13 mm × 13 mm body, 1.0 mm ball pitch, RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C33128P-10TIN and IS61WV102432BLL-10TLI, CY7C1062GE30-10BGXI delivers integrated, latency-free ECC correction and hardware error signaling - reducing BOM count, eliminating correction latency, and lowering system-level validation effort for safety-critical memory applications.

Availability

CY7C1062GE30-10BGXI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, avionics, and medical imaging systems requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1062GE30-10BGXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for industrial, automotive, and communications markets.

The CY7C1062GE series belongs to Cypress's high-reliability SRAM portfolio, engineered specifically for systems demanding fault-tolerant memory operation without external ECC logic or software overhead.

FAQ

Does CY7C1062GE30-10BGXI support automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read cycles but does not perform automatic write-back to memory. Corrected data appears on I/O pins, and the host must initiate a separate write cycle if persistent correction is required. This design avoids unintended overwrites and preserves memory integrity during transient faults.

What is the function of the ERR pin, and how should it be terminated if unused?

The ERR pin is an open-drain output that goes HIGH during single-bit error detection and correction. If unused, Cypress specifies it must be left floating - no pull-up or pull-down resistor is required. Connecting ERR to a host interrupt input enables immediate fault handling without polling, reducing CPU load in real-time systems.

How does the three-chip-enable architecture improve memory expansion?

CE1, CE2, and CE3 operate independently, allowing hierarchical decoding for multi-bank configurations. For example, CE1 can select a 16-Mbit block while CE2/CE3 enable interleaved access across four devices - enabling seamless 64-Mbit expansions without external glue logic or address demultiplexing.

Can CY7C1062GE30-10BGXI operate reliably at 1.8 V?

No. The "30" suffix denotes the 2.2–3.6 V operating range. For 1.65–2.2 V operation, the CY7C1062GE18 variant is specified. Attempting 1.8 V operation on the -30 version violates DC electrical specifications and may result in timing violations, increased ICC, or ECC failure - use only within its rated voltage window.