Infineon Technologies CY7C1062GE30-10BGXIT

Overview

CY7C1062GE30-10BGXIT from Cypress Semiconductor is a 16-Mbit (512 K × 32) static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time at 2.2–3.6 V, and dedicated ERR output pin for real-time error indication in mission-critical memory subsystems.

For engineers reviewing the CY7C1062GE30-10BGXIT datasheet, CY7C1062GE30-10BGXIT pinout, CY7C1062GE30-10BGXIT application, or CY7C1062GE30-10BGXIT equivalent, this device supports high-reliability embedded computing where data integrity, fast random access, and deterministic ECC reporting are required - especially in industrial control, avionics data buffers, and telecom baseband memory.

Technical Context

This SRAM implements a full 32-bit parallel interface with four independent byte-enable inputs (BA–BD) enabling selective 8-bit writes across the 32-bit data bus, and uses three chip enables (CE1–CE3) to support flexible memory expansion without external logic. Its ECC engine operates transparently during read cycles, detecting and correcting single-bit errors in real time.

The ERR pin asserts HIGH only upon successful single-bit correction - not detection alone - providing unambiguous host notification. It does not support automatic write-back, requiring software acknowledgment. Power management includes dual standby modes: ISB1 (TTL input threshold) and ISB2 (CMOS threshold), with 20 mA typical ISB2 current at VCC = 3.0 V.

Key Specifications

Pinout & Package

Package: 119-ball plastic ball grid array (PBGA), 14 mm × 20 mm body, 1.0 mm ball pitch, RoHS-compliant lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102432BLL-10MLI and 23LC1024-I/P, CY7C1062GE30-10BGXIT uniquely delivers deterministic, pin-level ECC reporting with zero software overhead and full 32-bit parallel bandwidth - essential for safety-critical, latency-constrained systems.

Availability

CY7C1062GE30-10BGXIT is available at Aetrix Electronics and suitable for industrial PLC memory modules, avionics data buffering, and medical imaging frame stores requiring stable component supply, long-term lifecycle assurance, and guaranteed Pb-free compliance.

Supply support for CY7C1062GE30-10BGXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on functional safety and long-lifecycle support.

CY7C1062GE30-10BGXIT belongs to Cypress's high-performance ECC SRAM product line, engineered specifically for systems demanding hardware-enforced data integrity in harsh electromagnetic and thermal environments.

FAQ

Does CY7C1062GE30-10BGXIT support automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. The corrected data appears on the I/O bus, and the host processor must initiate a separate write cycle if persistent correction is required. This design avoids unintended bus traffic and maintains deterministic timing behavior.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that asserts HIGH only after successful single-bit error correction - not mere detection. It must be externally pulled up to VDD (typically 3.3 V) and connected to a GPIO interrupt input on the host processor. No internal pull-up exists, and leaving it floating is acceptable if unused, per datasheet Note 3.

Can CY7C1062GE30-10BGXIT operate reliably at 1.8 V?

No. This variant (GE30 suffix) is specified only for 2.2 V to 3.6 V operation. For 1.65–2.2 V operation, the CY7C1062GE18 variant must be used. Attempting 1.8 V operation on the GE30 part violates its absolute maximum ratings and may result in undefined behavior or data corruption.

How many chip enable signals does CY7C1062GE30-10BGXIT have, and what is their logical behavior?

It has three independent chip enable inputs: CE1, CE2, and CE3. All three must be LOW for the device to be selected. If any one is HIGH, the device enters automatic power-down mode. This triple-CE architecture enables hierarchical memory decoding - for example, using CE1 for bank selection, CE2 for row decode, and CE3 for column decode in large memory arrays.