Infineon Technologies CY7C1062GN30-10BGXI

Overview

CY7C1062GN30-10BGXI from Cypress Semiconductor is a 16-Mbit (512 K × 32) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring TTL-compatible I/O, ERR output for error indication, and automatic CE power-down. It serves as high-reliability on-board memory in industrial control systems requiring data integrity under radiation-prone or long-term operation conditions.

For engineers reviewing the CY7C1062GN30-10BGXI datasheet, CY7C1062GN30-10BGXI pinout, CY7C1062GN30-10BGXI application, or CY7C1062GN30-10BGXI equivalent, key selection criteria include ECC support, 119-ball PBGA package compatibility, 10 ns timing at 3.0 V, low ISB2 standby current (20 mA typical), and byte-selectable 32-bit I/O architecture for flexible bus interfacing.

Technical Context

This SRAM implements a full 512 K × 32-bit array with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on every read access without host intervention. The device uses three independent chip enables (CE1, CE2, CE3) to support hierarchical memory expansion and four byte-enable inputs (BA–BD) for granular 8-bit write masking across the 32-bit data bus.

The ERR output is asserted high only during correction events on the CY7C1062GE variant (confirmed by part suffix 'E' and pinout diagrams), while the CY7C1062G lacks this pin. Data retention operates down to 1.0 V with no active refresh required, and automatic power-down engages when any CE is deasserted, reducing ISB2 to 20 mA typical.

Key Specifications

Pinout & Package

Package: 119-ball plastic ball grid array (PBGA), RoHS-compliant, 12 mm × 12 mm footprint, 1.0 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102432BLL-10TLI and MT48LC16M32B2P-6A:J, CY7C1062GN30-10BGXI delivers deterministic, zero-overhead ECC correction in an asynchronous 32-bit SRAM interface - enabling simpler, safer, and more timing-predictable integration in industrial and transportation control systems.

Availability

CY7C1062GN30-10BGXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, railway signaling data storage, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1062GN30-10BGXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

CY7C1062GN30-10BGXI belongs to the CY7C1062G/E family of ECC-enhanced SRAMs engineered specifically for mission-critical embedded systems where data integrity cannot rely solely on software-level error handling.

FAQ

Does CY7C1062GN30-10BGXI support automatic error correction without host processor involvement?

Yes. The device performs single-bit error detection and correction transparently on every read access using on-die ECC logic. No host intervention, firmware routines, or external circuitry is required - correction occurs within the tAA access time, and the ERR pin signals completion. This is confirmed in the functional description and truth table sections of datasheet 001-81609 Rev. *G.

What is the function of the ERR pin, and how should it be connected?

The ERR pin is an open-drain output that asserts HIGH during successful single-bit error correction. It requires an external pull-up resistor (typically 4.7 kΩ to VCC). When unused, it must be left floating per datasheet Note 3. It is not present on CY7C1062G variants - only on CY7C1062GE devices like this part (suffix 'E' and pinout showing ERR at location U2).

Can CY7C1062GN30-10BGXI operate at 1.8 V?

No. This specific variant (N30-10 suffix) is rated for 2.2 V–3.6 V operation only. The 1.65 V–2.2 V range applies only to the -18 speed grade (e.g., CY7C1062GN18-15BGXI). Attempting 1.8 V operation violates the absolute maximum ratings and will result in undefined behavior or data loss, as confirmed in the Operating Range and DC Electrical Characteristics tables.

How does the three-chip-enable architecture simplify memory expansion?

The CE1, CE2, and CE3 inputs enable hierarchical decoding: all three must be LOW for selection, allowing use of higher-order address bits to drive CE lines across multiple devices. This eliminates external logic gates for bank selection and supports seamless 64-bit or wider data buses by stacking identical parts with staggered CE assignments - verified in the Functional Description and Truth Table sections.