Infineon Technologies CY7C1069DV33-10BVXI

Overview

CY7C1069DV33-10BVXI from Cypress Semiconductor is a 16-Mbit (2M × 8) asynchronous CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V supply, 25 µA CMOS standby current, and 48-ball VFBGA (8 × 9.5 × 1 mm) packaging. It serves as main data buffer memory in industrial controllers, FPGA co-processor interfaces, and real-time signal acquisition systems requiring deterministic low-latency read/write.

For engineers reviewing the CY7C1069DV33-10BVXI datasheet, CY7C1069DV33-10BVXI pinout, CY7C1069DV33-10BVXI application, or CY7C1069DV33-10BVXI equivalent, key selection criteria include verified 10 ns tAA timing under industrial temperature (–40°C to +85°C), dual chip enable (CE1/CE2) for hierarchical memory banking, automatic power-down on deselect, and Pb-free VFBGA mechanical compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a fully asynchronous interface with independent CE1/CE2 control logic enabling selective bank isolation and seamless memory expansion. Its 2M × 8 organization maps directly to A0–A20 address lines and IO0–IO7 bidirectional data bus, supporting TTL-compatible voltage thresholds (VIH = 2.0 V min, VOL = 0.4 V max) and high-impedance tri-state outputs during deselect, OE HIGH, or write cycles.

It features two distinct power-down modes: ISB1 (30 mA, TTL input thresholds) and ISB2 (25 µA, CMOS input thresholds), triggered automatically when CE1 is HIGH or CE2 is LOW. Data retention at 2.0 V VCC ensures non-volatile hold during brown-out conditions without external backup.

Key Specifications

Pinout & Package

Package: 48-ball very fine pitch ball grid array (VFBGA), 8 mm × 9.5 mm × 1 mm body, Pb-free, JEDEC MO-276 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-10BIN, the CY7C1069DV33-10BVXI uniquely delivers 16 Mbit density in a 48-ball VFBGA with industry-leading 25 µA ISB2, making it optimal for thermally constrained industrial modules requiring maximum memory per mm² without sacrificing low-power sleep behavior.

Availability

CY7C1069DV33-10BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and automotive ADAS preprocessing units requiring stable component supply across extended product lifecycles.

Supply support for CY7C1069DV33-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial and automotive markets.

The CY7C1069DV33 belongs to Cypress's high-speed asynchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems where refresh-free operation and fast random access are mandatory.

FAQ

What is the minimum VCC required to retain data without loss?

The CY7C1069DV33-10BVXI guarantees data retention down to 2.0 V VCC across the full industrial temperature range (–40°C to +85°C). Below this threshold, data integrity is not assured. This 2.0 V retention point is specified in the Data Retention Characteristics table (Page 6) and validated under worst-case conditions including rapid VCC ramp-down and extended hold duration.

Can CE1 and CE2 be tied together for simplified control?

No - CE1 and CE2 have opposite active polarities (CE1 active-LOW, CE2 active-HIGH), so tying them together disables the device permanently. They must be driven independently: CE1 = LOW and CE2 = HIGH for normal operation. This dual-enable structure prevents accidental writes during power-up and supports hierarchical memory decoding in multi-SRAM systems.

Does the VFBGA package require special PCB layout considerations?

Yes - the 48-ball VFBGA (0.5 mm pitch, 8 × 9.5 mm) requires 4-layer board construction with dedicated ground/power planes, 0.15 mm trace/space routing, and microvia-in-pad or via-in-pad for escape routing. Thermal vias under the exposed die pad are recommended per Cypress AN98510 to maintain junction temperature below 125°C at 85°C ambient.

Is the 10 ns access time guaranteed over temperature and voltage?

Yes - the 10 ns tAA specification is guaranteed over the full industrial range (–40°C to +85°C) and at VCC = 3.3 V ±0.3 V, as confirmed in the AC Switching Characteristics table (Page 5). This guarantee includes process variation and applies to all valid read cycles (Read Cycle No. 1 and No. 2) defined in the datasheet timing diagrams.