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Infineon Technologies CY7C1069DV33-10ZSXIT
- Part No.:
- CY7C1069DV33-10ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1069DV33-10ZSXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,781
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Product details
Overview
CY7C1069DV33-10ZSXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) asynchronous CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V supply, TTL-compatible I/O, and dual chip enable (CE1/CE2) for flexible memory expansion in embedded control and data buffering systems.
For engineers reviewing the CY7C1069DV33-10ZSXIT datasheet, CY7C1069DV33-10ZSXIT pinout, CY7C1069DV33-10ZSXIT application, or CY7C1069DV33-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 25 µA standby current, 2.0 V data retention voltage, high-impedance tri-state outputs during deselect/write, and Pb-free 54-pin TSOP II packaging.
Technical Context
The CY7C1069DV33-10ZSXIT implements a full asynchronous SRAM architecture with independent address latching, dual CE control enabling hierarchical memory mapping, and automatic power-down when CE1 is HIGH or CE2 is LOW. It supports both CE-controlled and WE-controlled write cycles with guaranteed tWC = 10 ns and tSD = 5.5 ns data setup.
Its I/O pins (IO0–IO7) operate in true tri-state mode under three conditions: chip deselection (CE1 HIGH or CE2 LOW), OE HIGH, or active write (WE LOW). The device maintains data integrity at VCC = 2.0 V with ICCDR = 25 µA, and features input/output capacitance of 6 pF (TSOP II) and 8–10 pF respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns - maximum address-to-data valid delay; enables tight timing closure in 100 MHz-equivalent bus systems. |
| ICC (active) | 175 mA - typical operating supply current at 10 ns cycle; defines PCB power delivery and thermal design margin. |
| ISB2 (standby) | 25 µA - CMOS standby current with CE1 > VCC–0.3 V and CE2 < 0.3 V; critical for low-power sleep modes. |
| VCC range | 3.3 V ±0.3 V - strict supply tolerance requiring regulated LDO or DC-DC; excludes 2.5 V or 5 V operation. |
| Data retention VCC | 2.0 V - minimum supply to retain stored bits; allows graceful shutdown without data loss during brownout. |
| IO drive | IOH = –4 mA / IOL = 8 mA - TTL-compatible output strength; ensures reliable interfacing with 74LVC/ALVC logic families. |
| Capacitance (CIN/COUT) | 6 pF / 8 pF - input and I/O pin capacitance in TSOP II package; constrains trace length and fanout in high-speed layouts. |
Pinout & Package
Package: 54-pin TSOP II (Type II), Pb-free, center power/ground pinout (revolutionary layout per datasheet).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs | 21-bit address bus supporting 2M-word addressing; A0 is LSB, A20 is MSB. |
| IO0–IO7 | Bidirectional data I/O | 8-bit data bus with automatic high-impedance state during deselect, write, or OE HIGH. |
| CE1, CE2 | Chip enable controls | Active-LOW CE1 and active-HIGH CE2 together enable memory; enables bank selection and hierarchical decoding. |
| OE | Output enable | Active-LOW signal controlling output buffer; independent of WE, allowing read-modify-write sequences. |
| WE | Write enable | Active-LOW signal initiating write; combined with CE1/CE2 to define write cycle boundaries per truth table. |
| VCC, VSS | Power and ground | Multiple VCC (pins 12, 15, 29, 30, 46, 49, 51) and VSS (pins 11, 14, 31, 32, 36, 40, 44, 45, 50, 54) pins reduce IR drop and improve noise immunity. |
| NC | No-connect | Pins physically present but not bonded on die (e.g., pins 1, 3, 4, 5, 6, 7, 8, 9, 13, 16–19, 20–28, 33–35, 37–39, 41–43, 47, 48, 52, 53); must be left floating or tied to VSS per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time with full 3.3 V operation | Enables direct interface with legacy microcontrollers (e.g., ARM7TDMI, ColdFire) without wait states. |
| Dual CE architecture (CE1/CE2) | Supports seamless memory expansion up to 4 banks using simple logic gates-no external decoder required. |
| Automatic power-down on deselect | Reduces system standby power by eliminating need for external power-gating circuitry or firmware intervention. |
| TTL-compatible I/O levels | Eliminates level-shifting components when interfacing with industrial PLC controllers and FPGA I/O banks. |
| 2.0 V data retention | Permits safe power sequencing where core logic shuts down before memory, preserving configuration during reset. |
Applications
| Industrial PLC Data Buffering | Medical Imaging Frame Memory |
|---|---|
|
Use Scenario: Storing real-time sensor acquisition buffers and control command queues in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state data storage between FPGA-based I/O processors and ARM Cortex-M4 application cores. Use Value: 10 ns tAA ensures sub-microsecond response to interrupt-driven I/O events, while ISB2 = 25 µA extends battery-backed runtime during mains failure. |
Use Scenario: Holding uncompressed grayscale image frames (1024×768 @ 8-bit) during real-time ultrasound processing in portable diagnostic devices. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced directly to image signal processor (ISP) parallel bus with burst read capability. Use Value: 8-bit bidirectional I/O and 175 mA ICC support sustained 100 MB/s throughput, matching 80 MHz pixel clock requirements. |
| Avionics Display Controller Cache | Test Equipment Pattern Memory |
|
Use Scenario: Caching GUI assets and flight parameter overlays in DO-254-compliant cockpit display units with extended temperature operation. IC Role / Device Role / Timing Role: Radiation-tolerant (per MIL-STD-883 Class B) SRAM serving as display list cache for FPGA-based graphics pipeline. Use Value: –40°C to +85°C industrial grade rating and 24.18 °C/W ΘJA ensure stable operation inside sealed avionics enclosures without forced air cooling. |
Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing. IC Role / Device Role / Timing Role: Deterministic-access pattern memory synchronized to 100 MHz ATE timing controller via CE/OE/WE handshaking. Use Value: Guaranteed tRC = 10 ns and tHZOE = 5 ns allow precise edge-aligned pattern generation with <1 ns jitter budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV25616AL-10TLI | 256K × 16 organization (vs. 2M × 8); 10 ns tAA; 3.3 V only; no CE2 pin - single CE architecture. | Requires data bus width adaptation (16-bit vs. 8-bit); lacks hierarchical enable for multi-bank expansion. | Select when system uses 16-bit data path and requires lower density; verify address decoding compatibility with A0–A17. |
| Renesas R1LV25616AS-10SI | 256K × 16 organization; 10 ns tAA; 3.3 V; supports BYTE# control for 8-bit access within 16-bit bus. | Needs BYTE# signal routing and modified control logic; higher pin count (56-pin TSOP). | Prefer when migrating from 16-bit platforms; confirm BYTE# timing alignment with existing OE/WE sequence. |
Compared with IS61LV25616AL-10TLI and R1LV25616AS-10SI, CY7C1069DV33-10ZSXIT offers native 2M × 8 organization and dual CE for simpler bank decoding, making it optimal for 8-bit microcontroller systems requiring >1 Mbyte of fast buffer memory without glue logic.
Availability
CY7C1069DV33-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame memory, and avionics display controller cache requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1069DV33-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with headquarters in San Jose, CA.
The CY7C1069DV33 belongs to Cypress's high-speed asynchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems where predictability outweighs density efficiency.
FAQ
What is the maximum operating frequency supported by CY7C1069DV33-10ZSXIT?
The device does not specify a clock frequency because it is an asynchronous SRAM. Its performance is defined by timing parameters: tRC = 10 ns minimum read cycle time implies effective throughput up to 100 MHz in ideal burst scenarios, but actual bandwidth depends on system-level bus protocol, address setup/hold, and CE/OE assertion timing-not a fixed clock rate.
Can CY7C1069DV33-10ZSXIT operate at 2.5 V?
No. The device is strictly specified for 3.3 V ±0.3 V operation (i.e., 3.0 V to 3.6 V). Operation below 3.0 V violates the Absolute Maximum Ratings and risks data corruption or failure to meet tAA = 10 ns. Data retention is guaranteed only down to 2.0 V, but functional operation requires full VCC specification.
Is the 54-pin TSOP II package RoHS-compliant?
Yes. The "Z" suffix in CY7C1069DV33-10ZSXIT explicitly denotes Pb-free (RoHS-compliant) construction. The package uses lead-free solder terminations and complies with JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), requiring bake prior to reflow if exposed beyond floor life.
How does the dual CE (CE1/CE2) architecture improve system design?
CE1 (active-LOW) and CE2 (active-HIGH) provide orthogonal enable logic that simplifies memory banking: CE2 can serve as a global bank select while CE1 acts as local chip select, enabling 2×2 or 4×1 memory maps using only AND/OR gates-eliminating dedicated address decoders and reducing gate count, board area, and signal routing complexity.
CY7C1069DV33-10ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1069DV33-10ZSXIT FAQ
1.How can I place an order for CY7C1069DV33-10ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1069DV33-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1069DV33-10ZSXIT reliable?
The price and inventory of CY7C1069DV33-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069DV33-10ZSXIT is usually 5 days.
3.What payment methods are accepted for CY7C1069DV33-10ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069DV33-10ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1069DV33-10ZSXIT?
CY7C1069DV33-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1069DV33-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1069DV33-10ZSXIT?
For technical support, including CY7C1069DV33-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069DV33-10ZSXIT requirements.
6.How does Aetrix verify that CY7C1069DV33-10ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1069DV33-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069DV33-10ZSXIT meets industry standards.
7.What is the process for return or replacement of CY7C1069DV33-10ZSXIT?
All CY7C1069DV33-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069DV33-10ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1069DV33-10ZSXIT part is unused and in its original packaging.
Return procedure for CY7C1069DV33-10ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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