Infineon Technologies CY7C1069G-10BVXI

Overview

CY7C1069G-10BVXI from Cypress Semiconductor is a 16-Mbit (2M × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and dual chip enable architecture. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), supports 1.0-V data retention, and delivers 90 mA typical active current at 100 MHz - used in industrial control memory buffers requiring fault-tolerant storage.

For engineers reviewing the CY7C1069G-10BVXI datasheet, CY7C1069G-10BVXI pinout, CY7C1069G-10BVXI application, or CY7C1069G-10BVXI equivalent, key selection criteria include ECC-enabled reliability, multi-voltage support, TSOP II package compatibility, and dual CE timing control for high-density memory subsystems.

Technical Context

The CY7C1069G-10BVXI implements a 2M-word × 8-bit SRAM array with dedicated on-die ECC encoder/decoder logic that detects and corrects single-bit errors during read operations. Its dual chip enable (CE1/CE2) interface enables hierarchical memory banking and reduces bus contention in multi-device systems.

It features an ERR pin (not present on base CY7C1069G but confirmed for CY7C1069GE variants; CY7C1069G-10BVXI is a CY7C1069G variant per ordering code 'BVXI' indicating 54-pin TSOP II, no ERR), TTL-compatible inputs/outputs, and automatic CE-based power-down modes yielding 20 mA standby current (ISB2).

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (Thin Small Outline Package, Type II) with center power/ground pinout - optimized for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV20488BLL-10MLI and MT45W8MW16BGX-10IT:C, CY7C1069G-10BVXI provides deterministic zero-wait-state access, built-in hardware ECC, and asynchronous interface - critical for safety-certified embedded control where timing predictability and fault containment are non-negotiable.

Availability

CY7C1069G-10BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, railway signaling controller caches, and avionics data logger buffers requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1069G-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on robustness and long-term manufacturability.

CY7C1069G belongs to Cypress's high-speed SRAM product line targeting fault-tolerant embedded systems requiring ECC, multi-voltage operation, and deterministic timing - developed specifically for industrial control and safety-critical data buffering.

FAQ

Does CY7C1069G-10BVXI support 1.8 V operation?

Yes - it operates within the 1.65 V to 2.2 V VCC range, with typical performance characterized at 1.8 V. At this voltage, access time is 15 ns (CY7C1069G18 variant), but the -10BVXI suffix confirms 10 ns rating at 4.5–5.5 V; 1.8 V operation is valid but slower. Data retention remains functional down to 1.0 V.

Is the ERR pin present on CY7C1069G-10BVXI?

No - CY7C1069G-10BVXI is the base CY7C1069G variant (not CY7C1069GE). The ERR output is exclusive to GE-series parts. This device performs ECC correction internally but does not assert an external error flag; correction is transparent to the host system.

What is the maximum clock frequency supported for burst reads?

CY7C1069G-10BVXI is an asynchronous SRAM - it has no internal clock. Maximum effective throughput is determined by tAA (10 ns), tOH (output hold), and cycle time (tRC ≥ 15 ns). At 5 V, it supports sustained 66.7 MHz random access (15 ns cycle) or faster burst patterns using address sequencing and CE/OE control.

Can CY7C1069G-10BVXI be used in automotive applications?

It is rated for industrial temperature (–40 °C to +85 °C) and meets JEDEC JESD22-A108 reliability testing, but is not AEC-Q100 qualified. Use in automotive contexts requires customer-level qualification per application-specific stress profiles; it is widely deployed in under-hood industrial equipment with similar thermal and EMI conditions.