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Infineon Technologies CY7C1069G30-10BVXI

Part No.:
CY7C1069G30-10BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY7C1069G30-10BVXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:398

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Product details

Overview

CY7C1069G30-10BVXI from Cypress Semiconductor is a 16-Mbit (2M × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and dual chip enable (CE1/CE2) architecture. It operates across 2.2 V–3.6 V supply range, delivers 90 mA typical active current at 100 MHz, and supports industrial temperature range (–40 °C to +85 °C) for mission-critical memory subsystems in avionics data recorders.

For engineers reviewing the CY7C1069G30-10BVXI datasheet, CY7C1069G30-10BVXI pinout, CY7C1069G30-10BVXI application, or CY7C1069G30-10BVXI equivalent, key selection criteria include ECC-enabled reliability, TSOP II package compatibility with legacy SRAM footprints, multi-voltage operation, and ERR signal availability for real-time error reporting in safety-critical systems.

Technical Context

The device implements a dual-chip-enable interface with CE1 (active-low) and CE2 (active-high) enabling precise bank control and low-power deselection. Its ECC logic performs on-the-fly single-bit error detection and correction during read cycles without CPU intervention, using dedicated encoders/decoders integrated into the memory array path.

It features TTL-compatible input thresholds and output drive strength, supports 1.0-V data retention during standby, and places all I/O pins in high-impedance state when deselected (CE1 HIGH or CE2 LOW), during write (WE LOW), or when OE is HIGH - ensuring clean bus isolation in multiprocessor environments.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (2,097,152 × 8 bits) - supports full-word storage for firmware buffers and real-time telemetry stacks.
Access Time (tAA) 10 ns at VCC = 2.2–3.6 V - enables direct interfacing with 100 MHz microcontrollers without wait states.
ECC Function Single-bit error correction per 8-bit word - eliminates uncorrectable soft errors in radiation-prone or long-duration deployments.
Supply Voltage Range 2.2 V to 3.6 V - compatible with modern low-voltage SoCs while maintaining backward compatibility with 3.3-V system rails.
Active Current (ICC) 90 mA typical at 100 MHz - balances performance and thermal budget in compact, fanless embedded enclosures.
Standby Current (ISB2) 20 mA typical - sustains low-power monitoring modes without external power gating circuitry.
Data Retention Voltage 1.0 V - preserves memory contents during brown-out conditions or controlled power-down sequences.

Pinout & Package

Package: 54-pin TSOP II (Thin Small Outline Package, Type II) with center power/ground pinout configuration - optimized for high-density PCB layouts and thermal dissipation in stacked memory modules.

Pin/Terminal Circuit Role Design Meaning
A0–A20 Address Inputs 21-bit address bus supporting full 2M-word addressing; A20 enables highest address bit selection.
I/O0–I/O7 Bidirectional Data Bus 8-bit parallel interface with TTL-compatible drive; tri-stated automatically during deselect/write/OE-high.
CE1, CE2 Dual Chip Enable CE1 (active-low) and CE2 (active-high) must be asserted simultaneously (CE1=LOW, CE2=HIGH) to enable device.
WE Write Enable Active-low control for write operations; forces I/O pins into input mode and latches data on falling edge.
OE Output Enable Active-low control for read operations; enables output drivers only when CE1/CE2 are active and WE is HIGH.
ERR Error Reporting Output Open-drain output asserted HIGH during single-bit error detection/correction - requires external pull-up for host interrupt signaling.
VCC, VSS Power & Ground Multiple VCC/VSS pins distributed across package for low-impedance power delivery and reduced simultaneous switching noise.

Key Features

Feature Design Value
Embedded ECC Logic Hardware-accelerated single-bit error correction per 8-bit word - eliminates need for software-based checksum overhead and reduces CPU load in real-time systems.
Dual Chip Enable Interface Independent CE1/CE2 control allows selective bank activation and seamless integration into multi-SRAM memory maps without address decoding complexity.
TTL-Compatible I/O Direct interface with legacy 3.3-V microcontrollers and FPGAs without level-shifting - simplifies board design and reduces BOM count.
Multi-Voltage Operation Supports 2.2–3.6 V supply range - enables use in mixed-voltage systems and accommodates voltage tolerance drift over temperature and aging.
ERR Pin Assertion Dedicated open-drain output signals ECC event occurrence - provides deterministic fault reporting for ASIL-B compliant diagnostics and logging.

Applications

Avionics Data Recorder Industrial PLC Memory Buffer

Use Scenario: Continuous capture of flight sensor telemetry with guaranteed data integrity over 10,000+ hour operational life.

IC Role / Device Role / Timing Role: Primary non-volatile buffer memory with ECC protection against cosmic-ray-induced bit flips during extended missions.

Use Value: Eliminates silent data corruption in black-box recordings by correcting single-bit errors before data is archived to flash storage.

Use Scenario: Real-time buffering of I/O scan data in modular programmable logic controllers deployed in factory automation lines.

IC Role / Device Role / Timing Role: High-speed scratchpad memory interfaced directly to ARM Cortex-M7 MCU via 8-bit parallel bus with sub-10 ns latency.

Use Value: Enables deterministic 100 µs I/O cycle times while maintaining data fidelity across temperature cycling and EMI-rich plant-floor environments.

Railway Signaling Controller Medical Imaging Frame Store

Use Scenario: Storing critical interlocking logic state variables in SIL-3 certified railway signaling hardware operating continuously for 25 years.

IC Role / Device Role / Timing Role: Safety-critical volatile memory holding validated route tables and occupancy status with hardware-level ECC assurance.

Use Value: Meets EN 50129 requirements for failure-in-time (FIT) rate reduction by eliminating undetected memory errors that could compromise safe train separation.

Use Scenario: Temporary frame storage in portable ultrasound devices where image pixel data must remain intact during battery-swapping or brief power loss.

IC Role / Device Role / Timing Role: Low-voltage (2.5 V) SRAM buffer retaining 1024×768 grayscale frames during acquisition bursts and transfer to internal DRAM.

Use Value: Leverages 1.0-V data retention capability to preserve frame integrity during 500-ms power interruption - avoiding image reacquisition delays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV20488BLL-10MLI No integrated ECC; requires external error-checking logic or software layer. Suitable for cost-sensitive industrial HMI where FIT rate is not safety-certified. Select when ECC is handled at system level and 10 ns speed is required in 48-pin TSOP.
Microchip 23LCV1024-I/P Serial SPI interface (not parallel); 1 Mbit density; no ECC; 2.5–5.5 V operation. Fits space-constrained designs where board area is prioritized over bandwidth. Choose only if system architecture mandates serial memory and ECC is implemented externally via FPGA logic.

Compared with IS61WV20488BLL-10MLI and 23LCV1024-I/P, CY7C1069G30-10BVXI uniquely delivers hardware ECC, parallel 8-bit throughput, and industrial-grade reliability in a drop-in-replaceable TSOP footprint - making it the sole option for safety-critical, high-integrity SRAM applications requiring zero software overhead for error correction.

Availability

CY7C1069G30-10BVXI is available at Aetrix Electronics and suitable for avionics data recorders, industrial PLC memory buffers, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7C1069G30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC programmable systems-on-chip, and USB/USB-C solutions for industrial and automotive markets.

CY7C1069G30-10BVXI belongs to Cypress's industrial-grade parallel SRAM product line, designed specifically for applications demanding hardware ECC, multi-voltage flexibility, and extended temperature operation without compromising timing performance.

FAQ

Is CY7C1069G30-10BVXI pin-compatible with standard 2M×8 SRAMs like CY7C1061?

No. While both are 54-pin TSOP II SRAMs, CY7C1069G30-10BVXI uses a center power/ground pinout with dedicated ERR output and dual CE inputs, differing from CY7C1061's single CE and no ECC pins. PCB layout must accommodate distinct pin assignments and power distribution.

Does the ERR pin require an external pull-up resistor?

Yes. The ERR pin is open-drain and must be pulled up to VCC via a 4.7 kΩ resistor to generate a valid HIGH-level interrupt signal for the host processor during ECC correction events - omission results in undefined logic level and missed error reporting.

Can CY7C1069G30-10BVXI operate at 1.8 V?

No. This variant is rated for 2.2 V–3.6 V operation only. For 1.65–2.2 V operation, the CY7C1069G18-15BVXI variant must be used - attempting 1.8 V on CY7C1069G30-10BVXI violates absolute maximum ratings and risks functional failure.

What happens during a double-bit error?

The device detects but does not correct double-bit errors. In such cases, ERR remains deasserted (LOW), and corrupted data is passed to the host - system-level error handling (e.g., retry, checksum validation, or failover) must be implemented externally, as no hardware response is provided.

CY7C1069G30-10BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY7C1069G30-10BVXI FAQ

1.How can I place an order for CY7C1069G30-10BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1069G30-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1069G30-10BVXI reliable?

The price and inventory of CY7C1069G30-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069G30-10BVXI is usually 5 days.

3.What payment methods are accepted for CY7C1069G30-10BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069G30-10BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1069G30-10BVXI?

CY7C1069G30-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1069G30-10BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1069G30-10BVXI?

For technical support, including CY7C1069G30-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069G30-10BVXI requirements.

6.How does Aetrix verify that CY7C1069G30-10BVXI is sourced from the original manufacturer or authorized distributors?

All CY7C1069G30-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069G30-10BVXI meets industry standards.

7.What is the process for return or replacement of CY7C1069G30-10BVXI?

All CY7C1069G30-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069G30-10BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1069G30-10BVXI part is unused and in its original packaging.

Return procedure for CY7C1069G30-10BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1069G30-10BVXI Tags

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