Infineon Technologies CY7C1069G30-10ZSXI

Overview

CY7C1069G30-10ZSXI from Cypress Semiconductor is a 16-Mbit (2M × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and dual chip enable (CE1/CE2) architecture. It operates across 2.2 V–3.6 V supply, delivers 90 mA typical active current at 100 MHz, and supports industrial temperature range (–40 °C to +85 °C) for use in mission-critical memory subsystems requiring data integrity.

For engineers reviewing the CY7C1069G30-10ZSXI datasheet, CY7C1069G30-10ZSXI pinout, CY7C1069G30-10ZSXI application, or CY7C1069G30-10ZSXI equivalent, this device serves as a drop-in ECC-enhanced SRAM replacement in telecom control planes, industrial PLCs, and avionics data buffers where bit-flip resilience and deterministic timing are required.

Technical Context

The CY7C1069G30-10ZSXI implements a dual-chip-enable interface with CE1 active-low and CE2 active-high logic, enabling selective bank activation in multi-device memory systems. Its ECC engine performs real-time single-bit error detection and correction on every read access without CPU intervention, signaled via dedicated ERR output (not present on G-series variants).

It features TTL-compatible input thresholds and output drive strength, supports 1.0-V data retention during standby, and uses separate power/ground pins per TSOP II package quadrant to minimize switching noise. The 21-bit address bus (A0–A20) decodes 2M locations, while eight bidirectional I/O lines (I/O0–I/O7) share data path with internal ECC encoding/decoding circuitry.

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (ZS suffix), center power/ground pinout configuration; RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV20488BLL-10MLI and MT45W8MW16BGX-10IT:D, the CY7C1069G30-10ZSXI provides hardware-transparent ECC correction, pin-compatible SRAM timing, and industrial-grade voltage/temperature margins-making it the sole option for retrofitting ECC into legacy parallel-bus systems without architectural changes.

Availability

CY7C1069G30-10ZSXI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and aerospace avionics requiring stable component supply across extended product lifecycles.

Supply support for CY7C1069G30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on signal integrity and long-term manufacturability.

The CY7C1069G series targets applications demanding deterministic timing and data integrity in harsh environments, delivering ECC-enhanced SRAMs that bridge the gap between commodity memory and safety-critical storage requirements.

FAQ

Does CY7C1069G30-10ZSXI support automatic error correction without host intervention?

Yes. The device performs single-bit error correction transparently on every read access using its embedded ECC engine. When a correctable error is detected, the corrected data appears on I/O pins and the ERR pin asserts HIGH. No CPU polling, register access, or firmware action is required for correction.

What is the function of the dual chip enable (CE1/CE2) interface?

CE1 and CE2 implement a logical AND gate: the device activates only when CE1 is LOW and CE2 is HIGH. This configuration allows hierarchical memory decoding-e.g., one address line can select between two CY7C1069G30-10ZSXI devices by driving CE2 of one and CE1 of another-reducing external logic count.

Can CY7C1069G30-10ZSXI operate at 1.8 V?

No. The "30" in the part number denotes the 2.2 V–3.6 V operating range. For 1.65 V–2.2 V operation, the correct variant is CY7C1069G18-15ZSXI (15 ns speed grade). Attempting 1.8 V operation on the G30 variant violates datasheet specifications and may cause timing violations or data retention failure.

Is the ERR pin actively driven or open-drain?

The ERR pin is an actively driven CMOS output. It sources current when HIGH (indicating error correction) and sinks current when LOW (no error detected). No external pull-up resistor is needed, and the pin must not be tied to VCC or grounded-it is designed for direct connection to an interrupt input or status register bit.