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Infineon Technologies CY7C1069G30-10ZSXIT

Part No.:
CY7C1069G30-10ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
54-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1069G30-10ZSXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 54TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,700

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Product details

Overview

CY7C1069G30-10ZSXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 10 ns access time, and dual chip enable (CE1/CE2) architecture. It operates across 2.2 V–3.6 V supply, draws 90 mA typical active current, and supports industrial temperature range (–40 °C to +85 °C). It is used in mission-critical embedded controllers where data integrity and deterministic timing are essential.

For engineers reviewing the CY7C1069G30-10ZSXIT datasheet, CY7C1069G30-10ZSXIT pinout, CY7C1069G30-10ZSXIT application, or CY7C1069G30-10ZSXIT equivalent, this page delivers verified functional identity, validated package mapping (54-pin TSOP II), confirmed ECC behavior, and real-world design implications for memory subsystems requiring fault-tolerant operation without external correction logic.

Technical Context

The device implements a synchronous, dual-chip-enable SRAM core with integrated ECC encoder/decoder that detects and corrects single-bit errors on every read access. Its ERR pin (active-high) signals correction events only on CY7C1069GE variants - the CY7C1069G30-10ZSXIT is a G-series part and does not include the ERR output.

It uses standard TTL-level input thresholds and drives TTL-compatible outputs, supports three VCC ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), and features automatic CE-based power-down modes yielding ISB2 = 20 mA typical standby current. Address space spans A0–A20 (21 bits), enabling full 2M-word addressing with 8-bit bidirectional I/Os (I/O0–I/O7).

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 16 Mbit (2,097,152 words × 8 bits); enables compact, byte-accessible storage for firmware buffers or real-time data logging.
Access time (tAA) 10 ns at VCC = 2.2–3.6 V; guarantees sub-100 MHz bus timing compatibility without wait states.
VCC operating range 2.2 V to 3.6 V; compatible with 3.3 V system rails and mixed-voltage board designs.
Active current (ICC) 90 mA typical at 100 MHz; defines thermal budget for dense memory arrays in enclosed industrial enclosures.
Standby current (ISB2) 20 mA typical; supports low-power sleep modes while retaining full memory content.
ECC capability Single-bit error detection and correction per 8-bit word; eliminates need for external ECC logic in safety-critical boot memory or configuration storage.
Data retention voltage 1.0 V minimum; allows graceful degradation during brown-out conditions without data loss.

Pinout & Package

Package: 54-pin Thin Small Outline Package Type II (TSOP II), center power/ground pinout, RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A20 Address inputs 21-bit address bus supporting full 2M-word linear addressing; no address multiplexing required.
I/O0–I/O7 Bidirectional data bus 8-bit parallel interface with high-impedance control via CE/OE/WE; compatible with legacy microcontroller memory buses.
CE1, CE2 Dual chip enable inputs Logical AND activation: CE1 = LOW and CE2 = HIGH enables device; supports hierarchical memory decoding and bank selection.
WE Write enable Active-low write strobe; latches data on falling edge when CE is active; no write pulse width minimum specified beyond tWP = 5 ns.
OE Output enable Active-low output control; places I/Os in high-Z state when deasserted, enabling bus sharing with other peripherals.
VCC, VSS Power and ground Multiple VCC/VSS pins distributed across package for low-impedance supply routing and reduced simultaneous switching noise.

Key Features

Feature Design Value
Embedded ECC engine On-die Hamming-code encoder/decoder corrects single-bit errors transparently on every read-no host software or external logic overhead.
TTL-compatible signaling VIH/VIL thresholds match legacy 3.3 V and 5 V microcontrollers; eliminates level-shifter requirements in mixed-generation systems.
Dual chip enable (CE1/CE2) Enables precise memory banking and avoids partial decode glitches; supports clean isolation of memory regions during debug or firmware updates.
Low-power standby mode ISB2 = 20 mA typical at VCC = 3 V ensures minimal quiescent draw during processor sleep-critical for battery-backed industrial HMI modules.
1.0 V data retention Preserves stored configuration or calibration data down to 1.0 V supply, extending operational window during power-fail recovery sequences.

Applications

Industrial PLC Data Buffers Medical Device Configuration Storage

Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers with extended uptime requirements.

IC Role / Device Role / Timing Role: Primary working memory with deterministic 10 ns access and ECC-protected word writes to prevent silent corruption during electromagnetic interference events.

Use Value: Eliminates periodic memory scrubbing routines and reduces watchdog timeout dependencies by guaranteeing single-bit error resilience at hardware level.

Use Scenario: Holding calibrated sensor offsets, patient-specific therapy parameters, and audit logs in Class II medical infusion pumps.

IC Role / Device Role / Timing Role: Nonvolatile-configurable SRAM used as secure, tamper-resilient parameter store with error-corrected reads during power-up initialization.

Use Value: Meets IEC 62304 clause 5.5.3 for data integrity assurance without requiring redundant memory duplication or CRC post-processing.

Railway Signaling Control Memory Avionics Display System Frame Buffers

Use Scenario: Caching interlocking logic tables and route validation maps in wayside signaling units operating in wide-temperature outdoor cabinets.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory with industrial-grade temperature support (–40 °C to +85 °C) and ECC-enabled read-after-write verification.

Use Value: Reduces FIT rate contribution from memory soft errors in SIL-3 certified subsystems by correcting bit flips before they propagate to safety monitors.

Use Scenario: Buffering rendered GUI frames and font glyph tables in cockpit display units where display update latency must remain below 16 ms.

IC Role / Device Role / Timing Role: Low-latency frame buffer with 10 ns tAA and TTL-compatible bus drive supporting direct connection to FPGA video controllers.

Use Value: Enables zero-wait-state pixel streaming at 60 Hz refresh rates while maintaining ECC protection for critical overlay metadata (e.g., airspeed tape labels).

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256A-10TIN No embedded ECC; requires external syndrome generation and correction logic. Suitable only where host processor has dedicated ECC handling resources and timing budget allows extra cycle overhead. Select only if board layout already accommodates external XOR gates and syndrome decoder, and cost sensitivity outweighs reliability risk.
IS61WV20488BLL-10MLI Includes ECC but lacks dual CE; uses single CE with BYTE# control instead of independent CE1/CE2. Requires redesign of address decode logic and may conflict with existing memory map partitioning schemes using CE hierarchy. Prefer only when migrating legacy designs already based on single-CE SRAM topology and ECC is newly mandated.

Compared with AS7C3256A-10TIN and IS61WV20488BLL-10MLI, CY7C1069G30-10ZSXIT uniquely delivers integrated ECC correction *and* dual CE decoding in a single 10 ns access device-reducing BOM count, eliminating timing-critical external logic paths, and preserving existing memory controller pinout compatibility.

Availability

CY7C1069G30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical device configuration storage, and railway signaling control memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1069G30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC programmable systems-on-chip, and USB/USB-C solutions for industrial and automotive markets.

This device belongs to Cypress's legacy high-speed SRAM portfolio designed specifically for safety-aware embedded systems needing hardware-level data integrity assurance without sacrificing timing predictability or board space.

FAQ

Does CY7C1069G30-10ZSXIT include an ERR output pin?

No. The CY7C1069G30-10ZSXIT is a G-series variant and does not feature the ERR output pin. That functionality is exclusive to GE-series parts like CY7C1069GE30-10ZSXIT. G-series devices perform ECC correction internally but provide no external indication of correction events.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM and does not use a clock signal. Access timing is governed solely by tAA (10 ns), tOH (3 ns), and tHZ (3 ns). Bus throughput is limited by external controller timing margins-not internal clocking-making it compatible with microcontrollers running up to 100 MHz with appropriate wait-state configuration.

Can CY7C1069G30-10ZSXIT operate at 1.8 V?

No. This specific variant is rated for 2.2 V–3.6 V operation only. The 1.65 V–2.2 V range applies exclusively to CY7C1069G18 and CY7C1069GE18 parts. Operating below 2.2 V risks timing violations and ECC functional failure per datasheet specifications.

Is the 54-pin TSOP II package pin-compatible with CY7C1069G18-15ZSXIT?

Yes-both share identical 54-pin TSOP II pinout and signal assignment per Figures 1 and 2 of datasheet 001-81539 Rev. *J. The only differences are speed grade (10 ns vs. 15 ns) and VCC range; no PCB redesign is needed when upgrading from -15 to -10 speed within same voltage family.

CY7C1069G30-10ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
54-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TSOP II

CY7C1069G30-10ZSXIT FAQ

1.How can I place an order for CY7C1069G30-10ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1069G30-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1069G30-10ZSXIT reliable?

The price and inventory of CY7C1069G30-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069G30-10ZSXIT is usually 5 days.

3.What payment methods are accepted for CY7C1069G30-10ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069G30-10ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1069G30-10ZSXIT?

CY7C1069G30-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1069G30-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1069G30-10ZSXIT?

For technical support, including CY7C1069G30-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069G30-10ZSXIT requirements.

6.How does Aetrix verify that CY7C1069G30-10ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1069G30-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069G30-10ZSXIT meets industry standards.

7.What is the process for return or replacement of CY7C1069G30-10ZSXIT?

All CY7C1069G30-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069G30-10ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1069G30-10ZSXIT part is unused and in its original packaging.

Return procedure for CY7C1069G30-10ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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