Infineon Technologies CY7C1069GE30-10ZSXI

Overview

CY7C1069GE30-10ZSXI from Cypress Semiconductor is a 16-Mbit (2M × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip enable (CE1/CE2), and dedicated ERR output for real-time ECC event indication. It operates across 2.2 V–3.6 V, delivers 10 ns access time (tAA), supports TTL-compatible I/O, and retains data at 1.0 V - deployed in industrial-grade embedded controllers requiring fault-resilient memory.

For engineers reviewing the CY7C1069GE30-10ZSXI datasheet, CY7C1069GE30-10ZSXI pinout, CY7C1069GE30-10ZSXI application, or CY7C1069GE30-10ZSXI equivalent, key selection criteria include ECC error signaling behavior, dual CE timing compatibility, TSOP II package thermal resistance (θJA = 93.63 °C/W), and 54-pin center-power pinout layout for signal integrity in high-density PCBs.

Technical Context

The device implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read operations, asserting the ERR pin high upon correction. Its dual-chip-enable architecture (CE1 LOW + CE2 HIGH required for access) enables hierarchical memory banking control in multi-SRAM systems.

It uses asynchronous SRAM protocol with separate WE and OE controls: write occurs when CE1=LOW, CE2=HIGH, WE=LOW; read occurs when CE1=LOW, CE2=HIGH, OE=LOW, WE=HIGH. All I/Os enter high-impedance state during deselection, output disable, or write cycles - ensuring clean bus sharing without external isolation.

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (Thin Small Outline Package, Type II) with center power/ground pinout - optimized for thermal dissipation and signal integrity in compact industrial PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C3256A-10TIN and IS61WV20488BLL-10MLI, CY7C1069GE30-10ZSXI uniquely delivers autonomous single-bit correction with interrupt signaling - reducing firmware complexity, improving MTBF, and eliminating reliance on external error-handling infrastructure.

Availability

CY7C1069GE30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, military avionics data logging, and railway signaling controller cache applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1069GE30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC programmable systems-on-chip, and USB/USB-C solutions for industrial and automotive markets.

The CY7C1069G/E series belongs to Cypress's industrial SRAM portfolio, designed specifically for fault-resilient embedded systems where data integrity must be maintained under EMI, temperature stress, and long-term operation without refresh.

FAQ

What is the function of the ERR pin on CY7C1069GE30-10ZSXI?

The ERR pin is an open-drain output that asserts HIGH whenever the internal ECC logic detects and corrects a single-bit error in the accessed memory word. It remains inactive (high-impedance) during normal reads/writes and does not indicate multi-bit errors. This signal can be directly wired to a microcontroller interrupt input to trigger diagnostic logging or recovery routines without polling.

Does CY7C1069GE30-10ZSXI support automatic write-back after ECC correction?

No. The device performs real-time single-bit error correction during read operations but does not automatically rewrite the corrected data back to the memory array. The corrected value appears on the I/O pins, but the original corrupted bit remains stored until explicitly rewritten by the host system. This behavior is documented in Note 1 of the datasheet.

Can CY7C1069GE30-10ZSXI operate at 1.8 V?

No. The "30" suffix denotes the 2.2 V–3.6 V operating range. For 1.65 V–2.2 V operation, the correct variant is CY7C1069GE18-15ZSXI (15 ns speed grade). Attempting to power CY7C1069GE30-10ZSXI at 1.8 V may result in timing violations, data corruption, or functional failure due to insufficient noise margin and drive strength.

How does the dual chip enable (CE1/CE2) architecture affect memory mapping?

CE1 and CE2 function as a logical AND: the device is selected only when CE1 is LOW and CE2 is HIGH. This allows hierarchical decoding - for example, using CE2 to select a memory region and CE1 to enable individual devices within that region. Unused CE2 lines can be tied HIGH to simplify interface, but doing so forfeits bank-select flexibility in multi-SRAM configurations.