Infineon Technologies CY7C1069GE30-10ZSXIT

Overview

CY7C1069GE30-10ZSXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and dedicated ERR output for real-time error indication. It operates across 2.2 V–3.6 V, achieves 10 ns access time (tAA), draws 90 mA typical active current, and supports industrial temperature range (–40 °C to +85 °C). Used in mission-critical memory buffers requiring data integrity assurance, such as industrial PLCs and avionics data loggers.

For engineers reviewing the CY7C1069GE30-10ZSXIT datasheet, CY7C1069GE30-10ZSXIT pinout, CY7C1069GE30-10ZSXIT application, or CY7C1069GE30-10ZSXIT equivalent, this page delivers verified package mapping (54-pin TSOP II), ECC functional behavior, ERR signal timing, dual CE control logic, and direct substitution guidance against functionally aligned SRAMs with integrated error correction.

Technical Context

The device implements a dual-chip-enable architecture where CE1 LOW and CE2 HIGH enable memory access; OE and WE control read/write directionality while maintaining high-impedance I/O states during deselection or write cycles. Its ECC engine performs real-time single-bit error detection and correction on every read access, asserting the ERR pin high upon correction without automatic write-back.

Memory array organization is 2,097,152 words × 8 bits, addressed via A0–A20 (21 address lines), with I/O0–I/O7 serving bidirectional data paths. The ERR output is asynchronous and latched only during valid read cycles - it does not indicate multi-bit errors or uncorrectable events, and requires host-level polling or interrupt handling for system-level fault response.

Key Specifications

Pinout & Package

Package: 54-pin TSOP II (Thin Small Outline Package, Type II) with center power/ground pinout configuration. Pin count and layout conform to JEDEC MO-141AC standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV20488BLL-10MLI and MT45W8MW16BGX-107 IT:B, CY7C1069GE30-10ZSXIT provides deterministic, zero-latency ECC correction within a true asynchronous SRAM interface - eliminating software overhead, refresh constraints, and external syndrome calculation while maintaining pin-for-pin compatibility with legacy 2M×8 memory designs.

Availability

CY7C1069GE30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLCs, aerospace data loggers, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality without firmware dependencies.

Supply support for CY7C1069GE30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on signal integrity and functional safety.

CY7C1069GE belongs to Cypress's industrial-grade SRAM portfolio targeting systems where data integrity must be enforced at the silicon level - specifically engineered for environments with elevated radiation, thermal stress, or extended operational lifetime requirements.

FAQ

Does CY7C1069GE30-10ZSXIT support automatic error correction write-back?

No. The device performs single-bit error correction on read access and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Host firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in the datasheet footnote on page 3.

What is the function of the dual CE inputs (CE1 and CE2)?

CE1 and CE2 implement a logical AND enable scheme: the device activates only when CE1 is LOW and CE2 is HIGH. This configuration improves noise margin over single CE designs and allows hierarchical decoding in multi-memory systems - for example, using CE2 as a bank select and CE1 as a chip select within that bank.

Can the ERR pin be left unconnected if ECC reporting is unused?

Yes. The ERR pin is an open-drain output and may be left floating if not used. Cypress documentation (page 5, Note 3) states that unused ERR pins should remain unconnected - no pull-up or pull-down resistor is required, and floating state does not affect device operation or ECC functionality.

Is CY7C1069GE30-10ZSXIT compatible with 1.8 V supply operation?

No. This variant (suffix "30") is rated for 2.2 V to 3.6 V operation only. The 1.65 V–2.2 V range applies only to CY7C1069GE18 variants. Attempting 1.8 V operation on CY7C1069GE30-10ZSXIT violates the absolute maximum ratings and may result in undefined timing, ECC failure, or data retention loss.