My Inquiry
My Account
Infineon Technologies CY7C1069GN30-10BVXI
- Part No.:
- CY7C1069GN30-10BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1069GN30-10BVXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,831
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1069GN30-10BVXI from Cypress Semiconductor is a 16-Mbit (2M × 8) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply operation, and automatic CE-based power-down. It delivers 90 mA active current at 100 MHz and 20 mA typical CMOS standby current, housed in a Pb-free 54-pin TSOP II package. Used in industrial control buffers and legacy embedded systems requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1069GN30-10BVXI datasheet, CY7C1069GN30-10BVXI pinout, CY7C1069GN30-10BVXI application, or CY7C1069GN30-10BVXI equivalent, key selection criteria include tAA ≤ 10 ns, ISB2 ≤ 30 mA, VCC range of 2.2–3.6 V, data retention at 1.0 V, and dual chip enable (CE1/CE2) for hierarchical memory expansion.
Technical Context
The CY7C1069GN30-10BVXI implements a full asynchronous SRAM architecture with independent address decoding (A0–A20), bidirectional I/O0–I/O7 bus, and TTL-compatible input thresholds. Its dual CE interface enables seamless bank selection in multi-chip memory systems without external logic.
It supports three operational states: active read/write (CE1 = LOW, CE2 = HIGH, WE/OE controlled), high-impedance tri-state (CE deselected or OE/WE inactive), and automatic CMOS standby (ISB2 = 20 mA typ). Data retention mode activates at VCC = 1.0 V with tCDR = 0 ns and ICCDR ≤ 30 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns - guarantees data valid within 10 ns of stable address, enabling tight timing margins in 100 MHz bus systems |
| VCC Range | 2.2 V to 3.6 V - supports mixed-voltage designs and brown-out resilience down to 2.2 V |
| ICC (Active) | 90 mA typ at 100 MHz - defines thermal budget for continuous burst reads in compact PCB layouts |
| ISB2 (Standby) | 20 mA typ - enables low-power hold state during processor sleep without external power gating |
| Data Retention VCC | 1.0 V - allows memory contents to persist through deep power-down events with minimal backup energy |
| Package | 54-pin TSOP II (Type II) - surface-mount compatible with standard reflow profiles and board-level test access |
| Memory Organization | 2,097,152 × 8 - provides byte-wide addressing for 8-bit microcontrollers and legacy DSP interfaces |
Pinout & Package
Package: 54-pin Thin Small Outline Package (TSOP II), Type II, Pb-free, JEDEC MO-141AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word decoding; A0 = LSB, A20 = MSB |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface with high-impedance control via CE/OE/WE; shares pins for read and write |
| CE1, CE2 | Chip Enable Inputs | Complementary enables: CE1 = LOW and CE2 = HIGH required for device selection; enables memory banking |
| OE | Output Enable | Controls output buffer only; I/Os remain high-Z when OE = HIGH, even if CE active |
| WE | Write Enable | Active-LOW signal initiating write cycle; latches data on falling edge when CE conditions met |
| VCC, VSS | Power Supply Pins | VCC (pins 16, 24, 32, 40, 48, 54) and VSS (pins 15, 23, 31, 39, 47, 53) provide distributed decoupling |
| NC | No Connect | Pins 1, 11, 12, 13, 14, 17, 18, 19, 20, 21, 22, 25, 26, 27, 28, 29, 30, 33, 34, 35, 36, 37, 38, 41, 42, 43, 44, 45, 46, 49, 50, 51, 52 - not bonded on die; must be left unconnected |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Enables direct interfacing with 100 MHz microcontrollers without wait states |
| Dual CE architecture (CE1/CE2) | Allows hierarchical memory mapping across up to four banks using simple logic or FPGA outputs |
| Automatic CE power-down | Reduces standby current to 20 mA typ without requiring external control signals or sequencing |
| TTL-compatible I/O | Eliminates level-shifting components when interfacing with legacy 3.3 V or 5 V logic families |
| 1.0 V data retention | Permits system-level power gating while preserving SRAM contents during extended sleep modes |
Applications
| Industrial PLC Data Buffering | Legacy Medical Device Memory |
|---|---|
Use Scenario: Real-time I/O scan buffering in programmable logic controllers with deterministic cycle times. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state storage for input/output image tables updated every 10 ms. Use Value: 10 ns tAA ensures full 2M-byte buffer read/write completes within single CPU bus cycle at 100 MHz. |
Use Scenario: Patient parameter storage in battery-powered diagnostic equipment requiring long-term data integrity. IC Role / Device Role / Timing Role: Nonvolatile-critical memory holding calibration coefficients and last-session vitals during main power loss. Use Value: 1.0 V data retention allows retention for >72 hours on supercapacitor backup without refresh circuitry. |
| Avionics Display Frame Buffer | Test Equipment Pattern Memory |
Use Scenario: Pixel line buffering in ruggedized cockpit displays operating across –40 °C to +85 °C. IC Role / Device Role / Timing Role: High-reliability SRAM storing one horizontal scan line (1920 × 1 bytes) for real-time overlay rendering. Use Value: 2.2–3.6 V VCC range accommodates aircraft 28 V DC-DC ripple; ISB2 ≤ 30 mA minimizes thermal load in sealed enclosures. |
Use Scenario: Vector pattern storage in automated test equipment generating 100+ Mbps digital stimulus waveforms. IC Role / Device Role / Timing Role: Deterministic-access memory feeding high-speed DACs with precomputed waveform segments. Use Value: Dual CE support enables seamless ping-pong buffering between two 1M-word segments without CPU intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV25616AL-10TLI | 256K × 16 organization, 10 ns tAA, 3.3 V only, 48-pin TSOP | Wider data bus (16-bit), lower density (4 Mbit), no 2.2 V support | Select when 16-bit microcontroller interface is required and voltage margin is constrained to 3.3 V ±0.3 V |
| ON Semiconductor MC14LC5481DW | 1 M × 8, 12 ns tAA, 5 V operation, 28-pin SOIC | Slower speed, higher voltage, smaller capacity, through-hole package | Choose for legacy 5 V systems where board space permits larger SOIC and timing slack ≥ 2 ns exists |
Compared with IS61LV25616AL-10TLI and MC14LC5481DW, the CY7C1069GN30-10BVXI uniquely balances 2M × 8 density, 10 ns speed, wide 2.2–3.6 V operation, and industrial temperature range - making it optimal for new designs replacing aging 3.3 V SRAMs in space-constrained embedded systems.
Availability
CY7C1069GN30-10BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, avionics display frame buffering, and legacy medical device memory requiring stable component supply across extended product lifecycles.
Supply support for CY7C1069GN30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with headquarters in San Jose, CA.
The CY7C1069GN series targets deterministic-performance embedded systems needing pin-compatible, drop-in replacements for aging fast SRAMs - emphasizing timing predictability, wide VCC tolerance, and industrial-grade reliability over cost-optimized densities.
FAQ
What is the minimum VCC required to retain data in CY7C1069GN30-10BVXI?
Data retention is guaranteed at VCC = 1.0 V, with ICCDR ≤ 30 mA under those conditions. The device maintains stored contents indefinitely at this voltage provided CE1 is held HIGH or CE2 LOW to enter retention mode. No external refresh or clocking is needed, and retention persists across temperature ranges from –40 °C to +85 °C per the Industrial specification.
Can CY7C1069GN30-10BVXI operate with a 2.5 V supply?
Yes - the specified VCC range is 2.2 V to 3.6 V, and all AC/DC parameters including tAA = 10 ns, ICC = 90 mA typ, and VIH/VIL thresholds are guaranteed across this full range. At 2.5 V, VOH remains ≥2.0 V and VOL ≤0.4 V under load, ensuring compatibility with 2.5 V logic families without level shifters.
How does the dual CE (CE1/CE2) interface improve memory expansion?
CE1 and CE2 function as complementary enables: the device activates only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding - e.g., using upper address bits to drive CE2 across multiple chips while sharing CE1 globally - enabling clean 4-chip expansion to 8M × 8 without additional glue logic or address demultiplexing.
Is the 54-pin TSOP II package RoHS-compliant and lead-free?
Yes - the CY7C1069GN30-10BVXI carries the "VXI" suffix per Cypress ordering nomenclature, indicating Pb-free (lead-free) construction and RoHS compliance. The TSOP II package uses matte tin terminations and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements for standard SMT assembly.
CY7C1069GN30-10BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1069GN30-10BVXI FAQ
1.How can I place an order for CY7C1069GN30-10BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1069GN30-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1069GN30-10BVXI reliable?
The price and inventory of CY7C1069GN30-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069GN30-10BVXI is usually 5 days.
3.What payment methods are accepted for CY7C1069GN30-10BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069GN30-10BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1069GN30-10BVXI?
CY7C1069GN30-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1069GN30-10BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1069GN30-10BVXI?
For technical support, including CY7C1069GN30-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069GN30-10BVXI requirements.
6.How does Aetrix verify that CY7C1069GN30-10BVXI is sourced from the original manufacturer or authorized distributors?
All CY7C1069GN30-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069GN30-10BVXI meets industry standards.
7.What is the process for return or replacement of CY7C1069GN30-10BVXI?
All CY7C1069GN30-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069GN30-10BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1069GN30-10BVXI part is unused and in its original packaging.
Return procedure for CY7C1069GN30-10BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1069GN30-10BVXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
