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Infineon Technologies CY7C1069GN30-10BVXIT
- Part No.:
- CY7C1069GN30-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1069GN30-10BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,856
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Product details
Overview
CY7C1069GN30-10BVXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V operating voltage, and TTL-compatible I/O. It features automatic CE-based power-down, 1.0 V data retention, and dual chip enables (CE1/CE2) for seamless memory expansion in embedded controllers and industrial systems.
For engineers reviewing the CY7C1069GN30-10BVXIT datasheet, CY7C1069GN30-10BVXIT pinout, CY7C1069GN30-10BVXIT application, or CY7C1069GN30-10BVXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 mA typical standby current, VCC range compatibility with 3.3 V ±0.3 V industrial rails, and TSOP II package suitability for high-density PCB layouts.
Technical Context
The CY7C1069GN30-10BVXIT implements a 2,097,152 × 8-bit memory array with fully asynchronous operation-no clock required. Read and write cycles are controlled solely by CE1, CE2, OE, and WE logic levels, supporting both address-transition and OE-controlled read modes per AC switching specifications.
It uses dual chip enable architecture: CE1 must be LOW and CE2 HIGH to activate the device; either CE1 HIGH or CE2 LOW forces automatic power-down with ISB2 ≤ 30 mA. I/O pins enter high-impedance state during deselection, OE HIGH, or write operations, ensuring clean bus sharing in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum address-to-data valid delay-enables direct interface with 100 MHz microcontrollers without wait states. |
| VCC Range | 2.2 V to 3.6 V-supports mixed-voltage designs and legacy 3.3 V systems with ±0.3 V tolerance. |
| ISB2 | 20 mA typical CMOS standby current-reduces system-level power consumption during idle periods. |
| Data Retention | 1.0 V minimum VCC-allows battery-backed operation at ultra-low voltage during main power loss. |
| Package | 54-pin TSOP II (Type II)-standardized footprint compatible with automated SMT assembly and thermal management up to 125°C ambient. |
| I/O Interface | TTL-compatible inputs/outputs-eliminates level-shifting requirements when interfacing with legacy FPGA or MCU GPIOs. |
| Memory Organization | 2M × 8 bits (2,097,152 words × 8)-provides byte-wide data access ideal for firmware storage and buffer applications. |
Pinout & Package
Package: 54-pin Thin Small Outline Package (TSOP II), Type II, standard JEDEC MO-143AC footprint with 0.8 mm pitch and 1.2 mm body height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word addressing; A0 is LSB, A20 is MSB. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; high-impedance when deselected, OE HIGH, or during write. |
| CE1, CE2 | Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 form dual-enable logic; both required for device activation. |
| OE | Output Enable | Active-LOW control for output drivers; independent of CE status for flexible bus timing. |
| WE | Write Enable | Active-LOW signal initiating write cycle; concurrent with CE1/CE2 enables determines write validity. |
| VCC, VSS | Power Supply Pins | Multiple VCC (pins 15, 24, 33, 42, 48, 54) and VSS (pins 16, 25, 34, 43, 49) reduce IR drop and improve noise immunity. |
| NC | No Connect | Pins 3, 11, 12, 13, 17, 18, 19, 20, 21, 22, 23, 26, 27, 28, 29, 30, 31, 32, 35, 36, 37, 38, 39, 40, 41, 44, 45, 46, 47, 50, 51, 52, 53-unbonded on die; must remain unconnected. |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Enables zero-wait-state operation with high-speed microcontrollers such as ARM Cortex-M7 or RISC-V cores running at 100 MHz. |
| Dual chip enable (CE1/CE2) | Allows hierarchical memory mapping-e.g., CE2 used for bank selection, CE1 for per-chip gating-reducing external logic count. |
| Automatic CE power-down | Reduces ICC to ≤30 mA when CE1 HIGH or CE2 LOW, eliminating need for external power-gating circuitry. |
| 1.0 V data retention | Permits use of coin-cell backup (e.g., CR2032) to preserve SRAM contents during main power failure without dedicated retention ICs. |
| TTL-compatible I/O | Direct connection to legacy 5 V-tolerant microcontrollers (e.g., Intel 8051 derivatives) without level translators. |
Applications
| Industrial PLC Memory Buffer | Medical Device Data Logger |
|---|---|
|
Use Scenario: Storing real-time sensor samples and control state variables in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing low-latency, non-blocking read/write access for cyclic data buffering. Use Value: 10 ns tAA ensures sub-microsecond memory access within tight 100 µs PLC scan windows, avoiding pipeline stalls. |
Use Scenario: Capturing ECG waveforms and patient vitals in portable diagnostic equipment with intermittent power supply. IC Role / Device Role / Timing Role: Primary volatile data buffer with 1.0 V data retention enabling safe holdover during battery swaps or brownouts. Use Value: ISB2 ≤ 30 mA minimizes quiescent drain on lithium primary cells, extending field service intervals beyond 12 months. |
| Avionics Display Frame Buffer | Test Equipment Pattern Generator |
|
Use Scenario: Holding rendered GUI frames and overlay metadata in ruggedized cockpit displays operating across –40°C to +85°C. IC Role / Device Role / Timing Role: High-reliability SRAM with extended temperature rating and TSOP II mechanical robustness for vibration-prone environments. Use Value: Dual CE architecture allows dynamic frame buffer partitioning-e.g., CE2 selects front/back buffers-without external multiplexers. |
Use Scenario: Storing digital stimulus patterns for automated circuit board testing where pattern depth exceeds on-chip memory. IC Role / Device Role / Timing Role: External pattern store synchronized to test controller's address bus, accessed via burst reads at 100 MHz-equivalent throughput. Use Value: tRC = 10 ns supports sustained 100 MT/s random access-critical for generating complex, variable-length test vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 10 ns access, 3.3 V only (no 2.2–3.6 V range), 48-pin TSOP I, no CE2 pin-single CE architecture. | Lacks dual CE for memory banking; requires redesign of chip select logic in multi-bank systems. | Select when cost sensitivity outweighs flexibility needs and system uses fixed 3.3 V rail only. |
| IS61LV25616AL-10TLI | 10 ns access, 3.3 V, 44-pin TSOP II, 256K × 16 organization-wider but shallower memory map than 2M × 8. | Requires data bus width adaptation (16-bit vs. 8-bit) and address remapping due to different word size. | Prefer for systems needing higher bandwidth per access (16-bit transfers) and lower pin count, accepting reduced depth. |
Compared with AS6C1008-10TIN and IS61LV25616AL-10TLI, CY7C1069GN30-10BVXIT offers unique dual CE support and wider VCC range, making it optimal for industrial systems requiring flexible memory expansion and wide-input-voltage resilience.
Availability
CY7C1069GN30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical data loggers, avionics display frame buffers, and automated test equipment pattern generators requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1069GN30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.
CY7C1069GN belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered for deterministic timing, low-power industrial operation, and drop-in compatibility with legacy 8-bit and 16-bit microcontroller buses.
FAQ
What is the maximum operating frequency supported by CY7C1069GN30-10BVXIT?
The device has no internal clock and operates asynchronously. Its maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 million random accesses per second. System-level frequency depends on controller bus timing-not the SRAM itself-and is validated for reliable operation with 100 MHz microcontrollers under specified load conditions.
Can CY7C1069GN30-10BVXIT operate at 2.5 V?
Yes. The datasheet specifies a guaranteed operating range of 2.2 V to 3.6 V. At 2.5 V, all AC parameters-including tAA ≤ 10 ns and ISB2 ≤ 30 mA-are maintained per DC and AC electrical characteristics tables, making it suitable for mixed-voltage systems with 2.5 V logic domains.
Does this SRAM require an external clock or refresh circuitry?
No. CY7C1069GN30-10BVXIT is a true static RAM: it retains data indefinitely as long as power is applied and requires no clock input or periodic refresh cycles. Its operation is purely level-sensitive, controlled only by CE1, CE2, OE, and WE signals.
How does the dual CE architecture improve system design?
The CE1 (active-LOW) and CE2 (active-HIGH) combination enables hierarchical memory decoding-e.g., using CE2 as a bank-select signal and CE1 as per-device enable-reducing external gate count and simplifying address decoding logic in systems with multiple memory devices or memory-mapped peripherals.
CY7C1069GN30-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1069GN30-10BVXIT FAQ
1.How can I place an order for CY7C1069GN30-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1069GN30-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1069GN30-10BVXIT reliable?
The price and inventory of CY7C1069GN30-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069GN30-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7C1069GN30-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069GN30-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1069GN30-10BVXIT?
CY7C1069GN30-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1069GN30-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1069GN30-10BVXIT?
For technical support, including CY7C1069GN30-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069GN30-10BVXIT requirements.
6.How does Aetrix verify that CY7C1069GN30-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1069GN30-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069GN30-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7C1069GN30-10BVXIT?
All CY7C1069GN30-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069GN30-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1069GN30-10BVXIT part is unused and in its original packaging.
Return procedure for CY7C1069GN30-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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