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Infineon Technologies CY7C1069GN30-10ZSXI
- Part No.:
- CY7C1069GN30-10ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1069GN30-10ZSXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,408
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Product details
Overview
CY7C1069GN30-10ZSXI from Cypress Semiconductor is a 16-Mbit (2M × 8) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply range, and TTL-compatible I/O. It features automatic CE-based power-down, 1.0 V data retention, and dual chip enables (CE1/CE2) for seamless memory expansion in embedded controllers and industrial systems.
For engineers reviewing the CY7C1069GN30-10ZSXI datasheet, CY7C1069GN30-10ZSXI pinout, CY7C1069GN30-10ZSXI application, or CY7C1069GN30-10ZSXI equivalent, key selection factors include tAA = 10 ns read timing, ISB2 = 20 mA typical standby current, VCC operating range compatibility, and TSOP II package pin mapping for PCB layout and signal integrity planning.
Technical Context
The device implements a full asynchronous SRAM architecture with independent address decoding (A0–A20), bidirectional 8-bit I/O bus (I/O0–I/O7), and dual active-low chip enable logic (CE1 LOW + CE2 HIGH for selection). Read and write operations are controlled by OE and WE respectively, with high-impedance I/O states enforced during deselection or write cycles.
It supports two distinct power management modes: ISB1 (40 mA max, TTL input thresholds) and ISB2 (30 mA max, CMOS input thresholds), both triggered automatically when CE1/CE2 are deasserted. Data retention operates at 1.0 V VCC with ICCDR ≤ 30 mA, enabling low-power backup operation without external battery support.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum address-to-data valid delay - ensures deterministic timing for CPU or FPGA interface without wait states at 100 MHz bus clocks. |
| VCC Range | 2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V system rails, eliminating need for level shifters in mixed-voltage designs. |
| ISB2 | 20 mA typical CMOS standby current - enables ultra-low-power hold mode in portable or energy-constrained applications. |
| Data Retention VCC | 1.0 V minimum - allows memory state preservation during brown-out or controlled shutdown without external capacitor hold-up. |
| Package | 54-pin TSOP II (Type II) - surface-mount, JEDEC-standard footprint supporting automated assembly and thermal performance up to 93.6°C/W θJA. |
| IO Capacitance | 10 pF typical - minimizes signal loading on high-speed address/data buses, reducing timing margin degradation in dense layouts. |
| Output Drive | VOL ≤ 0.4 V at 8 mA (3.0–3.6 V) - guarantees robust low-level signaling into standard CMOS/TTL loads without external pull-downs. |
Pinout & Package
Package: 54-pin Thin Small Outline Package (TSOP II), Type II, 0.5 mm pitch, body size 10.16 mm × 20.0 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs | 21-bit address bus supporting 2M-word addressing; A0 least significant, A20 most significant. |
| I/O0–I/O7 | Bidirectional data bus | 8-bit parallel interface; high-impedance when CE1 HIGH, CE2 LOW, OE HIGH, or during write (WE LOW). |
| CE1, CE2 | Chip enable inputs | Active-low dual CE logic: device selected only when CE1 = LOW AND CE2 = HIGH - enables bank selection and hierarchical decoding. |
| OE | Output enable | Active-low control for output buffer; data appears on I/O pins only when OE = LOW during read cycles. |
| WE | Write enable | Active-low control for write operation; latches data on I/O pins into addressed location when CE1/CE2 active and WE = LOW. |
| VCC, VSS | Power and ground | Multiple VCC (pins 3, 16, 29, 35, 40, 44, 49, 52) and VSS (pins 1, 15, 28, 33, 37, 43, 48, 54) pins reduce IR drop and improve noise immunity. |
| NC | No-connect | Pins 2, 11, 12, 13, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 30, 31, 32, 34, 36, 38, 39, 41, 42, 45, 46, 47, 50, 51, 53 - not bonded on die; must be left unconnected. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE power-down | Reduces ICC to ISB2 = 20 mA (typ) without external control logic - simplifies low-power state management in firmware. |
| Dual chip enable (CE1/CE2) | Enables direct connection to 32-bit or 64-bit processors with bank-select signals - eliminates need for external decode logic in multi-bank systems. |
| TTL-compatible I/O | Supports direct interfacing with legacy microcontrollers and FPGAs using standard 3.3 V LVTTL levels - no level translation required. |
| 1.0 V data retention | Maintains stored data during deep sleep or brown-out events - enables reliable nonvolatile context save without external battery or capacitor. |
| High-speed 10 ns access | Meets timing requirements of 100 MHz synchronous bus interfaces - supports zero-wait-state operation with modern MCUs and SoCs. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous SRAM providing low-latency, byte-accessible storage for cyclic I/O image updates. Use Value: 10 ns tAA ensures sub-microsecond response to CPU read requests, while ISB2 = 20 mA standby current extends uptime during idle polling intervals. |
Use Scenario: Temporary frame storage in portable ultrasound or X-ray units where power interruption must not corrupt imaging buffers. IC Role / Device Role / Timing Role: High-reliability, low-voltage-retention memory holding raw pixel data between processing stages. Use Value: 1.0 V data retention preserves frame integrity during brief power loss, and 2.2–3.6 V VCC range accommodates battery-backed 2.5 V or 3.3 V rails. |
| Automotive Infotainment UI Cache | Test & Measurement Instrument FIFO |
|
Use Scenario: Caching GUI assets and navigation map tiles in head-unit systems requiring fast display refresh and thermal resilience. IC Role / Device Role / Timing Role: Nonvolatile-capable SRAM serving as low-latency UI asset cache with guaranteed data persistence across ignition cycles. Use Value: Dual CE logic allows dynamic partitioning between OS and application memory regions; TSOP II package supports automotive-grade reflow profiles. |
Use Scenario: High-throughput data capture buffer in oscilloscopes and logic analyzers where burst-mode sampling demands consistent latency. IC Role / Device Role / Timing Role: Asynchronous FIFO front-end memory accepting parallel samples from ADCs or digital capture engines. Use Value: tRC = 10 ns and tDOE = 5 ns minimize read turnaround time, enabling >100 MS/s sustained capture rates without pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV25616AL-10TLI | 256K × 16 organization (4-Mbit), 10 ns access, 3.3 V only, 44-pin TSOP | Higher density per pin count but narrower 16-bit bus; lacks dual CE and 2.2 V min VCC support | Select when 16-bit data path and strict 3.3 V operation are preferred over voltage flexibility and bank-select capability. |
| ON Semiconductor MCM62950A-10 | 256K × 16 organization (4-Mbit), 10 ns access, 5V-tolerant TTL I/O, 44-pin SOJ | Legacy 5 V interface support; no low-voltage retention or CMOS standby modes | Choose only for backward compatibility with 5 V systems; unsuitable for new low-power or mixed-voltage designs. |
Compared with IS61LV25616AL-10TLI and MCM62950A-10, CY7C1069GN30-10ZSXI offers unique 2M × 8 organization, dual CE for scalable memory mapping, 2.2–3.6 V operation, and 1.0 V data retention - making it optimal for modern embedded systems requiring flexible voltage, low-power hold, and precise byte-wide access.
Availability
CY7C1069GN30-10ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and automotive infotainment UI caches requiring stable component supply across extended product lifecycles.
Supply support for CY7C1069GN30-10ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB-C/USB-PD solutions.
CY7C1069GN belongs to Cypress's legacy high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in real-time industrial, medical, and automotive control systems.
FAQ
What is the minimum VCC required to retain data in CY7C1069GN30-10ZSXI?
The device guarantees data retention down to 1.0 V VCC under specified conditions (CE1 > VCC – 0.2 V, CE2 < 0.2 V, ambient temperature ≤ +85 °C). This allows memory contents to persist during brown-out events or controlled low-power suspend modes without external backup power sources.
Can CY7C1069GN30-10ZSXI operate with a 2.5 V supply?
Yes - the device is fully specified for 2.2 V to 3.6 V operation. At 2.5 V, all AC and DC parameters including tAA = 10 ns, ISB2 ≤ 30 mA, and VOH/VOL remain within datasheet limits, enabling direct integration into 2.5 V system domains without level shifting.
How does the dual CE architecture simplify memory expansion?
CE1 and CE2 provide independent active-low enables: selecting the device requires CE1 = LOW AND CE2 = HIGH. This allows one CE pin to serve as a global chip select and the other as a bank-select signal, enabling straightforward 2:1 or 4:1 memory expansion without external decoders or glue logic.
Is the 54-pin TSOP II package RoHS-compliant and lead-free?
Yes - the "ZSXI" suffix denotes a Pb-free, RoHS-compliant 54-pin TSOP II package with NiPdAu lead finish. It meets JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260 °C).
CY7C1069GN30-10ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1069GN30-10ZSXI FAQ
1.How can I place an order for CY7C1069GN30-10ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1069GN30-10ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1069GN30-10ZSXI reliable?
The price and inventory of CY7C1069GN30-10ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069GN30-10ZSXI is usually 5 days.
3.What payment methods are accepted for CY7C1069GN30-10ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069GN30-10ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1069GN30-10ZSXI?
CY7C1069GN30-10ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1069GN30-10ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1069GN30-10ZSXI?
For technical support, including CY7C1069GN30-10ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069GN30-10ZSXI requirements.
6.How does Aetrix verify that CY7C1069GN30-10ZSXI is sourced from the original manufacturer or authorized distributors?
All CY7C1069GN30-10ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069GN30-10ZSXI meets industry standards.
7.What is the process for return or replacement of CY7C1069GN30-10ZSXI?
All CY7C1069GN30-10ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069GN30-10ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1069GN30-10ZSXI part is unused and in its original packaging.
Return procedure for CY7C1069GN30-10ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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