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Infineon Technologies CY7C1069GN30-10ZSXIT
- Part No.:
- CY7C1069GN30-10ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 54-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1069GN30-10ZSXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 54TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,246
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Product details
Overview
CY7C1069GN30-10ZSXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) asynchronous CMOS static RAM with 10 ns access time, 2.2–3.6 V supply range, and TTL-compatible I/O. It features automatic CE-based power-down, 1.0 V data retention, and dual chip enables (CE1/CE2) for seamless memory expansion in embedded controllers and industrial data buffers.
For engineers reviewing the CY7C1069GN30-10ZSXIT datasheet, CY7C1069GN30-10ZSXIT pinout, CY7C1069GN30-10ZSXIT application, or CY7C1069GN30-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 20 mA typical standby current, VCC operating range (2.2–3.6 V), and support for TSOP II (54-pin) and VFBGA (48-ball) packages in industrial temperature grade.
Technical Context
The CY7C1069GN30-10ZSXIT implements a fully asynchronous SRAM architecture with independent address decoding (A0–A20), bidirectional 8-bit I/O bus (I/O0–I/O7), and dual active-low chip enables (CE1, CE2) enabling hierarchical memory mapping. Read/write control uses separate OE and WE signals with high-impedance tri-state outputs during deselect or write cycles.
It supports two distinct low-power states: ISB1 (TTL-input mode, 40 mA max) and ISB2 (CMOS-input mode, 30 mA max), triggered automatically when CE1 is HIGH or CE2 is LOW. Data retention at 1.0 V allows battery-backed operation without full VCC, verified across –40 °C to +85 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| tAA | 10 ns maximum address-to-data valid delay - ensures deterministic timing for CPU or FPGA interface without wait states at 100 MHz bus rates. |
| VCC Range | 2.2 V to 3.6 V - compatible with both 2.5 V and 3.3 V system rails, eliminating level-shifting in mixed-voltage designs. |
| ISB2 | 20 mA typical CMOS standby current - enables ultra-low-power hold mode in portable or energy-constrained applications. |
| Data Retention | 1.0 V minimum VCC - permits backup from coin cell or supercapacitor during main power loss, preserving memory contents. |
| Package | 54-pin TSOP II (Type II) - surface-mount package with 0.5 mm pitch, optimized for high-density PCB layouts and automated assembly. |
| Operating Temp | –40 °C to +85 °C - qualified for industrial environments including factory automation, motor drives, and telecom infrastructure. |
| IOH/VOL | IOH = –4.0 mA @ 3.0–3.6 V (VOH ≥ 2.4 V); IOL = 8.0 mA @ 3.0–3.6 V (VOL ≤ 0.4 V) - guarantees robust noise margin and drive strength into standard CMOS loads. |
Pinout & Package
Package: 54-pin Thin Small Outline Package (TSOP II), Type II, 0.5 mm pitch, JEDEC MO-143AC compliant. Pin 1 marked by beveled corner; NC pins are unconnected on die.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs | 21-bit address bus supporting 2M-word addressing; A0 least significant, A20 most significant. |
| I/O0–I/O7 | Bidirectional data bus | 8-bit parallel interface; high-impedance during deselect, write, or OE HIGH - enables bus sharing. |
| CE1, CE2 | Chip enable controls | Active-low CE1 and active-high CE2 provide hierarchical enable logic for multi-chip memory banks. |
| OE | Output enable | Active-low signal controlling output buffer; independent of WE, allowing read-modify-write sequences. |
| WE | Write enable | Active-low signal initiating write cycle; overlaps with CE1/CE2 assertion to define write window. |
| VCC, VSS | Power and ground | Dual VCC pins (pins 16, 29, 35, 40, 44, 51) and multiple VSS pins (pins 7, 21, 26, 31, 46, 49, 54) reduce IR drop and improve noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Enables direct interfacing with 100 MHz microcontrollers and FPGAs without external wait-state generation. |
| Dual chip enables (CE1/CE2) | Supports cascaded memory expansion up to 4 GB using simple logic decoding - no external glue logic required. |
| 1.0 V data retention | Allows seamless transition to battery-backed mode during brownout or controlled shutdown, preserving critical state data. |
| TTL-compatible I/O | Eliminates need for level translators when interfacing with legacy 5 V or mixed-voltage logic families. |
| Automatic CE power-down | Reduces standby current to 20 mA (typical) without software intervention - ideal for always-on edge nodes. |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition streams in programmable logic controllers with deterministic interrupt response. IC Role / Device Role / Timing Role: Asynchronous SRAM serving as fast-access scratchpad between ADC interface and ARM Cortex-M7 core. Use Value: 10 ns tAA ensures sub-microsecond data capture latency; dual CE enables bank-switching for ping-pong buffering without CPU overhead. |
Use Scenario: Temporary storage of uncompressed ultrasound or X-ray frame data prior to JPEG2000 compression in portable diagnostic devices. IC Role / Device Role / Timing Role: High-bandwidth 8-bit parallel memory interfaced to FPGA image pipeline for zero-latency frame staging. Use Value: 90 mA ICC at 100 MHz supports sustained burst reads; 1.0 V retention preserves last acquired frame during battery swap. |
| Avionics Display Controller | Automotive ADAS Pre-Buffer |
|
Use Scenario: Storing GUI assets and overlay metadata in DO-254-certified cockpit display units requiring radiation-tolerant, predictable timing. IC Role / Device Role / Timing Role: Deterministic static RAM used for double-buffered video LUT and glyph cache, accessed via fixed-cycle bus master. Use Value: Guaranteed tAA ≤ 10 ns eliminates timing uncertainty; industrial temp grade ensures reliability at –40 °C to +85 °C ambient. |
Use Scenario: Capturing pre-trigger radar point clouds in automotive forward collision warning systems with <100 μs latency budget. IC Role / Device Role / Timing Role: Low-latency SRAM acting as first-stage FIFO between 77 GHz radar DSP and CAN FD gateway processor. Use Value: ISB2 = 20 mA typical enables continuous monitoring mode; TSOP II package supports reflow-soldered, vibration-resistant mounting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV20488BLL-10MLI | Same density (2M × 8), 10 ns speed, but only single CE and 3.3 V only (3.135–3.465 V); no 2.2–3.6 V wide range. | Lacks dual CE for hierarchical expansion; unsuitable where voltage headroom or multi-bank decode is required. | Select if system uses fixed 3.3 V rail and requires lower cost; avoid if 2.5 V compatibility or bank-select flexibility is needed. |
| ON Semiconductor MC14LC51200FN | 2M × 8, 12 ns access, 3.3 V only, no data retention below 2.0 V; higher ISB (50 mA typical). | No 1.0 V retention mode; not viable for battery-backup or brownout scenarios. | Acceptable for non-critical buffering where extended retention is unnecessary and 12 ns latency is tolerable. |
Compared with IS61WV20488BLL-10MLI and MC14LC51200FN, the CY7C1069GN30-10ZSXIT uniquely combines 10 ns speed, 2.2–3.6 V operation, dual CE, and 1.0 V data retention - making it the only option meeting simultaneous requirements for industrial voltage flexibility, memory expansion, and fail-safe data hold.
Availability
CY7C1069GN30-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, avionics display controllers, and automotive ADAS pre-buffers requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7C1069GN30-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB-C/USB-PD solutions.
The CY7C1069GN series belongs to Cypress's high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in real-time industrial, medical, and transportation systems where timing predictability and voltage flexibility are critical.
FAQ
What is the maximum clock frequency supported by CY7C1069GN30-10ZSXIT?
This device is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (tAA = 10 ns) and cycle time (tRC = 10 ns), enabling reliable operation with bus frequencies up to 100 MHz when interfaced with controllers that meet setup/hold timing requirements. No internal oscillator or clock input exists.
Can CY7C1069GN30-10ZSXIT operate at 2.5 V?
Yes - the device is fully specified over 2.2 V to 3.6 V, including 2.5 V nominal operation. At 2.5 V, all AC parameters (tAA, tRC) remain guaranteed at 10 ns, and DC characteristics (VOH, VOL, ICC) meet datasheet limits per the 2.2–2.7 V test conditions column.
How does the dual CE (CE1/CE2) configuration simplify memory expansion?
CE1 (active-low) and CE2 (active-high) allow logical AND-based chip selection. For example, using a 2-bit decoder, four CY7C1069GN30-10ZSXIT devices can be addressed independently without external NAND gates - CE2 routes higher-order address bits while CE1 handles lower-order decode, reducing board-level complexity.
Is the 1.0 V data retention mode guaranteed across temperature?
Yes - data retention at VCC = 1.0 V is specified from –40 °C to +85 °C. The parameter tCDR (chip deselect to data retention time) is 0 ns, meaning retention begins immediately upon entering standby; ICCDR remains ≤30 mA across the full industrial temperature range.
CY7C1069GN30-10ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 54-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 54-TSOP II
CY7C1069GN30-10ZSXIT FAQ
1.How can I place an order for CY7C1069GN30-10ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1069GN30-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1069GN30-10ZSXIT reliable?
The price and inventory of CY7C1069GN30-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1069GN30-10ZSXIT is usually 5 days.
3.What payment methods are accepted for CY7C1069GN30-10ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1069GN30-10ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1069GN30-10ZSXIT?
CY7C1069GN30-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1069GN30-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1069GN30-10ZSXIT?
For technical support, including CY7C1069GN30-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1069GN30-10ZSXIT requirements.
6.How does Aetrix verify that CY7C1069GN30-10ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1069GN30-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1069GN30-10ZSXIT meets industry standards.
7.What is the process for return or replacement of CY7C1069GN30-10ZSXIT?
All CY7C1069GN30-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1069GN30-10ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1069GN30-10ZSXIT part is unused and in its original packaging.
Return procedure for CY7C1069GN30-10ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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