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Infineon Technologies CY7C106D-10VXI

Part No.:
CY7C106D-10VXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
28-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C106D-10VXI.pdf
Description:
IC SRAM 1MBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,338

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Product details

Overview

CY7C106D-10VXI from Cypress Semiconductor is a 1-Mbit (256 K × 4) high-speed CMOS static RAM with 10 ns access time, 5 V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It features 28-pin 400-mil SOJ packaging, 2.0 V data retention, and tri-state I/O for bus sharing in embedded memory subsystems.

For engineers reviewing the CY7C106D-10VXI datasheet, CY7C106D-10VXI pinout, CY7C106D-10VXI application, or CY7C106D-10VXI equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3.0 mA standby current, VCC = 5 V ±0.5 V operation, and compatibility with legacy 5 V TTL microprocessors requiring VIH ≥ 2.2 V.

Technical Context

This SRAM implements a 262,144 × 4-bit array with separate address decoding (A0–A17), tri-state bidirectional I/O (IO0–IO3), and three control inputs: CE (active-low chip enable), OE (active-low output enable), and WE (active-low write enable). All control signals are TTL-compatible with VIH ≥ 2.2 V and VIL ≤ 0.8 V.

Power management is handled via automatic CE-driven power-down: when CE is HIGH, ICC drops to ISB2 = 3.0 mA (CMOS mode) or ISB1 = 10 mA (TTL mode); during active read/write, ICC = 80 mA at 100 MHz. Data retention operates down to VCC = 2.0 V with no external refresh required.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256 K × 4 bits (1 Mbit total); supports byte-wide data interface with four parallel I/O lines
Access Time (tAA)10 ns maximum; enables direct interfacing with 100 MHz bus systems without wait states
VCC Supply5 V ± 0.5 V; requires stable 5 V rail-no internal regulation or voltage tolerance beyond spec
Standby Current (ISB2)3.0 mA at VCC = 5 V, CE > VCC – 0.3 V; enables low-power hold mode during processor idle
Data Retention Voltage2.0 V minimum; retains stored data with VCC reduced to battery-backup level
I/O CompatibilityTTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V); not compatible with pure CMOS 3.3 V or 5 V VIH = 3.5 V logic
Package28-pin 400-mil wide molded SOJ; lead-free, surface-mountable with standard reflow profile

Pinout & Package

28-pin 400-mil wide molded SOJ package with gull-wing leads, RoHS-compliant, JEDEC MS-012AC compliant footprint.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus accepting 0–262,143; latched internally on CE/WE transitions
IO0–IO3Bidirectional Data I/O4-bit data bus; high-impedance when CE HIGH, OE HIGH, or WE LOW during write
CEChip EnableActive-low global select; initiates power-down when HIGH and disables all outputs
OEOutput EnableActive-low read control; enables output drivers only when CE is also LOW
WEWrite EnableActive-low write control; latches IO0–IO3 data into addressed location when CE LOW
VCCPower Supply+5 V supply pin; decoupling capacitor required within 10 mm of pin
GNDGround ReferenceSignal and power ground return; must be low-inductance connection to plane
NCNo ConnectPins 11 and 12 are unconnected on die; must remain floating or tied to GND per layout guidelines

Key Features

FeatureDesign Value
Pin- and function-compatible with CY7C106BEnables drop-in replacement in existing designs without PCB or firmware changes
Automatic CE power-downReduces ICC from 80 mA to 3 mA instantly upon deselection-no software or external logic needed
TTL-compatible I/ODirect interface with legacy 5 V microcontrollers (e.g., Intel 80C188, Motorola 68EC000) without level-shifting
2.0 V data retentionSupports battery-backed memory hold during main power loss-no external backup controller required
Tri-state outputs with fast Z-controltHZOE = 5 ns and tLZOE = 0 ns ensure clean bus arbitration and prevent contention in multi-SRAM systems

Applications

Industrial PLC Memory BufferLegacy Microcontroller Data RAM

Use Scenario: Real-time I/O scanning and register mapping in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Primary 1-Mbit data RAM buffer interfaced directly to 80C186EX address/data bus.

Use Value: 10 ns tAA eliminates wait states; ISB2 = 3 mA reduces thermal load in sealed enclosures during idle cycles.

Use Scenario: External RAM expansion for 16-bit embedded processors lacking on-chip memory.

IC Role / Device Role / Timing Role: Off-chip working memory mapped at 0x00000–0x3FFFF using A0–A17 and IO0–IO3.

Use Value: TTL-compatible VIH/VIL ensures reliable read/write with 5 V CPU I/O without level translators.

Automotive Engine Control Unit CacheMedical Diagnostic Instrument Data Log

Use Scenario: Temporary storage of sensor fusion results and fault codes in ECU modules operating across –40 °C to +85 °C.

IC Role / Device Role / Timing Role: Non-refreshing volatile memory holding runtime calibration tables and CAN message buffers.

Use Value: Guaranteed 10 ns performance over full industrial temperature range; 2.0 V retention supports safe shutdown logging.

Use Scenario: High-integrity waveform capture buffer in portable ultrasound or ECG devices requiring deterministic latency.

IC Role / Device Role / Timing Role: Circular buffer for digitized analog front-end samples before DSP processing or flash storage.

Use Value: Tri-state control prevents bus contention during DMA transfers; tDOE = 5 ns ensures precise sample alignment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C106B-10VXISame pinout and timing, but older revision with higher ISB2 = 5 mA and no Pb-free packagingNot suitable for RoHS-compliant production; lacks 2.0 V data retention guaranteeSelect only for legacy repair or non-RoHS environments where Pb-free is not mandated
AS6C1008-10TINSame 256K×4 organization and 10 ns speed, but 3.3 V only (VCC = 3.3 V ±0.3 V), CMOS I/O levelsRequires level translation when interfacing with 5 V TTL CPUs; incompatible with existing 5 V bus designsChoose only for new 3.3 V systems targeting lower active power (ICC = 45 mA) and smaller footprint

Compared with CY7C106B-10VXI, CY7C106D-10VXI offers RoHS compliance and guaranteed 2.0 V data retention; versus AS6C1008-10TIN, it maintains native 5 V TTL compatibility but consumes more standby power in 3.3 V systems.

Availability

CY7C106D-10VXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy microcontroller data RAM expansion, and automotive engine control unit cache applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C106D-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for embedded systems.

The CY7C106D belongs to Cypress's legacy high-speed CMOS SRAM product line, designed specifically for 5 V TTL-based microprocessor systems requiring deterministic timing, low-latency access, and industrial temperature operation.

FAQ

Is CY7C106D-10VXI compatible with 3.3 V systems?

No. CY7C106D-10VXI is specified only for 5 V ±0.5 V operation. Its TTL-compatible inputs require VIH ≥ 2.2 V, but its VCC must be 5 V; applying 3.3 V will cause functional failure and is outside absolute maximum ratings. Use AS6C1008-10TIN or IS61LV25616 for 3.3 V designs.

What is the purpose of the NC pins on CY7C106D-10VXI?

Pins 11 and 12 are No Connect (NC) terminals-unbonded on the die and electrically isolated. They must remain unconnected in PCB layout; tying them to GND or VCC may cause mechanical stress or unintended coupling. Cypress confirms these pins serve no electrical function and are reserved for future package variants.

Does CY7C106D-10VXI require an external clock or refresh circuitry?

No. As a static RAM, CY7C106D-10VXI has no clock input and requires no refresh cycles. Data retention is maintained as long as VCC remains ≥ 2.0 V and CE is held HIGH in standby. All timing is controlled solely by CE, OE, and WE signal edges-not by any internal oscillator or counter.

Can CY7C106D-10VXI be used in place of CY7C1006D-10VXI?

Yes, with mechanical caveats. Both share identical electrical specs and pin functions, but CY7C106D uses a 400-mil SOJ package while CY7C1006D uses a narrower 300-mil SOJ. PCB footprints are not interchangeable-mounting requires matching land patterns. Signal integrity and thermal performance differ slightly due to package size and θJA (58.76 °C/W vs. 59.16 °C/W).

CY7C106D-10VXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
28-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
256K x 4
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

CY7C106D-10VXI FAQ

1.How can I place an order for CY7C106D-10VXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C106D-10VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C106D-10VXI reliable?

The price and inventory of CY7C106D-10VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C106D-10VXI is usually 5 days.

3.What payment methods are accepted for CY7C106D-10VXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C106D-10VXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C106D-10VXI?

CY7C106D-10VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C106D-10VXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C106D-10VXI?

For technical support, including CY7C106D-10VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C106D-10VXI requirements.

6.How does Aetrix verify that CY7C106D-10VXI is sourced from the original manufacturer or authorized distributors?

All CY7C106D-10VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C106D-10VXI meets industry standards.

7.What is the process for return or replacement of CY7C106D-10VXI?

All CY7C106D-10VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C106D-10VXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C106D-10VXI part is unused and in its original packaging.

Return procedure for CY7C106D-10VXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C106D-10VXI Tags

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