Infineon Technologies CY7C1071DV33-12BAXI

Overview

CY7C1071DV33-12BAXI from Cypress Semiconductor is a 32-Mbit (2 M × 16) asynchronous CMOS static RAM with 12 ns access time, 3.3 V ±0.3 V operation, and automatic CE-controlled power-down mode. It features TTL-compatible I/O, byte-wide write enable (BHE/ BLE), and 2.0 V data retention-used in high-speed buffer memory for industrial controllers and FPGA co-processor interfaces.

For engineers reviewing the CY7C1071DV33-12BAXI datasheet, CY7C1071DV33-12BAXI pinout, CY7C1071DV33-12BAXI application, or CY7C1071DV33-12BAXI equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 50 µA standby current, dual-byte write control, FBGA-48 package compatibility, and 2 M × 16 word organization for parallel bus interfacing.

Technical Context

This SRAM implements full asynchronous operation with independent byte enable control: BHE governs I/O8–I/O15, BLE governs I/O0–I/O7, enabling partial-word writes without read-modify-write cycles. Address range spans A0–A20 (21 bits), supporting 2,097,152 word locations.

Power management includes two standby modes: ISB1 = 60 µA (TTL input thresholds) and ISB2 = 50 µA (CMOS input thresholds), activated automatically when CE is HIGH. Data retention operates down to VCC = 2.0 V with ICCDR ≤ 50 µA, verified over –40 °C to +85 °C industrial temperature range.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61WV204816BLL-12MLI, CY7C1071DV33-12BAXI offers lower standby current and smaller FBGA footprint; versus W9825G6JH-12, it delivers true zero-clock, no-refresh operation essential for deterministic real-time buffering.

Availability

CY7C1071DV33-12BAXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, FPGA configuration caches, and medical imaging frame stores requiring stable component supply across extended product lifecycles.

Supply support for CY7C1071DV33-12BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications systems.

CY7C1071DV33 belongs to Cypress's high-speed parallel SRAM product line, engineered for deterministic, low-latency data buffering in real-time control and signal processing applications without refresh overhead.

FAQ

Does CY7C1071DV33-12BAXI require an external clock signal?

No. This is an asynchronous SRAM: all operations are controlled solely by CE, WE, OE, and BHE/BLE timing transitions-no clock input or internal oscillator is present or needed. Read and write cycles complete within fixed ns-level windows defined by tRC and tWC.

Can I use only the low byte (I/O0–I/O7) while leaving BHE unconnected?

Yes, but BHE must be held HIGH (e.g., tied to VCC through 10 kΩ) to disable the high byte. Leaving BHE floating violates DC input voltage specifications and may cause undefined output behavior or increased ICC. BLE remains fully functional for low-byte writes.

What is the maximum operating frequency supported for continuous burst reads?

While not a clocked device, the minimum read cycle time tRC = 12 ns implies a theoretical maximum sustained read rate of 83.3 MHz. Actual throughput depends on address setup/hold and bus turnaround timing in the host controller, but no wait states are required at this rate.

Is CY7C1071DV33-12BAXI compliant with JEDEC JESD22-A114 reliability standards?

Yes. Per Cypress documentation (Document Number 001-12063 Rev. *J), the device meets JEDEC JESD22-A114 (ESD Human Body Model ≥ 2001 V) and JESD22-A115 (Latch-up > 200 mA), validated across the full industrial temperature range.