Infineon Technologies CY7C1071DV33-12BAXIT

Overview

CY7C1071DV33-12BAXIT from Cypress Semiconductor is a 32-Mbit (2 M × 16) asynchronous CMOS static RAM with 12 ns access time, 3.3 V ±0.3 V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It supports byte-wide writes via independent BHE/ BLE controls and operates across –40 °C to +85 °C for industrial embedded memory buffering.

For engineers reviewing the CY7C1071DV33-12BAXIT datasheet, CY7C1071DV33-12BAXIT pinout, CY7C1071DV33-12BAXIT application, or CY7C1071DV33-12BAXIT equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 50 µA standby current, 48-ball FBGA package compatibility, and dual-byte enable interface for legacy bus architectures.

Technical Context

This SRAM implements a fully asynchronous, non-multiplexed address/data architecture with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without external logic. All control inputs (CE, OE, WE, BHE, BLE) are active-low and TTL-compatible, supporting direct interfacing with microcontrollers and FPGAs operating at 3.3 V.

It features automatic power-down when CE is deasserted, reducing ICC to 50 µA (ISB2) under CMOS input conditions. Data retention is guaranteed down to 2.0 V with no clock or refresh required, making it suitable for battery-backed or low-power hold modes in real-time systems.

Key Specifications

Pinout & Package

48-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.8 mm ball pitch, 8 mm × 6 mm body size, and JEDEC MO-270AC compliant footprint. Pin assignments follow standard SRAM control and data interface conventions with dedicated byte enables and high-impedance tri-state control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with AS7C3256B-12JIN and IS61LV25616AL-12TQLI, CY7C1071DV33-12BAXIT delivers full 32-Mbit density in a thermally superior FBGA package with lowest standby current (50 µA), making it optimal for high-reliability, space-constrained industrial and medical systems requiring deterministic timing and long-term data retention.

Availability

CY7C1071DV33-12BAXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, and avionics display refresh requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1071DV33-12BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and consumer applications.

The CY7C1071DV33 belongs to Cypress's high-speed asynchronous SRAM product line, engineered for deterministic timing, low-power standby, and robust operation in mission-critical embedded systems without refresh overhead.

FAQ

What is the minimum VCC required to retain data without corruption?

Data retention is guaranteed down to 2.0 V with CE held HIGH and all inputs at valid logic levels. Below 2.0 V, stored bits may flip unpredictably. The device does not require clocking or refresh during retention mode, and no external circuitry is needed to maintain this state beyond holding VCC ≥ 2.0 V and CE HIGH.

Can CY7C1071DV33-12BAXIT interface directly with a 5 V microcontroller?

No - its inputs are TTL-compatible but not 5 V-tolerant. Absolute maximum input voltage is VCC + 0.5 V (≤ 3.8 V). Direct connection to 5 V logic risks permanent damage. A level-shifter IC or resistor-divider network is required for safe interfacing with 5 V systems.

How does automatic power-down behave when CE is toggled rapidly?

When CE transitions HIGH, the device enters ISB2 standby (50 µA) within 12 ns (tPD). Rapid CE toggling below the minimum read cycle time (12 ns) causes incomplete access cycles and invalid data; the SRAM does not latch or queue commands - each CE LOW pulse must meet full tRC timing to guarantee reliable read/write.

Are the NC pins on the 48-ball FBGA electrically isolated or internally tied?

The NC pins (A16 and A17) are physically unconnected to the silicon die and serve no electrical function. They must remain unconnected on the PCB - routing traces or applying solder paste to these balls may cause parasitic coupling or shorting. Cypress explicitly states "NC pins are not connected to the die" in the pin configuration diagram.