Infineon Technologies CY7C1079DV33-12BAXIT

Overview

CY7C1079DV33-12BAXIT from Infineon Technologies (formerly Cypress) is a 32-Mbit (4 M × 8) high-speed CMOS static RAM with 12 ns access time, 3.3 V ±0.3 V operation, and automatic CE power-down mode. It delivers 250 mA active current and 50 mA CMOS standby current in a 48-ball FBGA package, serving as main memory or buffer in industrial control systems requiring deterministic timing and data retention at 2.0 V.

For engineers reviewing the CY7C1079DV33-12BAXIT datasheet, CY7C1079DV33-12BAXIT pinout, CY7C1079DV33-12BAXIT application, or CY7C1079DV33-12BAXIT equivalent, key selection criteria include tAA = 12 ns read access, ISB2 = 50 mA low-power standby, dual/single CE configuration support, and FBGA-48 thermal resistance (θJA = 30.91 °C/W).

Technical Context

The device implements a synchronous, asynchronous SRAM architecture with TTL-compatible inputs/outputs and independent address/data bus organization. It supports both single-CE and dual-CE (CE1/CE2) configurations via internal logic mapping, enabling flexible chip-select arbitration in multi-memory systems.

Automatic power-down activates when CE is deasserted, reducing ICC to ISB2 = 50 mA under CMOS input conditions. Data retention is guaranteed down to VCC = 2.0 V with tCDR = 0 ns entry delay and full functionality restored within tR = tRC after VCC ramp-up.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, JEDEC MO-276 compliant. Pinout corresponds to single-CE configuration per Figure 1 of datasheet 001-50282 Rev. *F.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with IS61WV25616BLL-12MLI and 23LCV1024-I/P, CY7C1079DV33-12BAXIT uniquely combines 32 Mbit density, 12 ns parallel access, 2.0 V data retention, and FBGA thermal performance-making it irreplaceable in high-reliability, high-throughput embedded memory subsystems.

Availability

CY7C1079DV33-12BAXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, and railway signaling controllers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for CY7C1079DV33-12BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions with ISO 9001 and IATF 16949 certification.

This device belongs to Infineon's legacy Cypress SRAM portfolio, engineered for deterministic, low-latency, high-reliability memory in mission-critical industrial and transportation systems where asynchronous access predictability and data retention integrity are non-negotiable.

FAQ

What is the difference between single-CE and dual-CE configurations for CY7C1079DV33-12BAXIT?

The part supports both configurations via internal logic: in dual-CE mode, CE1 and CE2 pins form a logical AND (CE1 LOW and CE2 HIGH yields active CE); in single-CE mode, CE1 functions as CE and CE2 is NC. The -12BAXIT suffix denotes the single-CE FBGA variant per ordering code definitions in datasheet page 11.

Does CY7C1079DV33-12BAXIT require an external clock signal?

No. This is an asynchronous SRAM: all operations are controlled solely by CE, OE, and WE timing relative to address and data transitions. No clock input is present or required; tRC = 12 ns defines the minimum cycle time between successive read/write operations.

Can CY7C1079DV33-12BAXIT operate at 2.5 V supply?

No. The device is specified only for 3.3 V ± 0.3 V (3.0 V to 3.6 V). Operation below 3.0 V violates the absolute maximum rating and may cause data corruption or failure to meet tAA = 12 ns. Data retention at 2.0 V applies only after full initialization at nominal VCC.

How is thermal performance validated for the 48-ball FBGA package?

Thermal resistance values (θJA = 30.91 °C/W, θJC = 13.60 °C/W) are measured per JEDEC JESD51-2 on a standardized 3 × 4.5 inch, four-layer PCB with 2 oz copper. These values are confirmed by Infineon's characterization lab and published in the DC Electrical Characteristics table on page 4 of datasheet 001-50282 Rev. *F.