Infineon Technologies CY7C107D-10VXI

Overview

CY7C107D-10VXI from Cypress Semiconductor is a 1-Mbit (1,048,576 × 1) high-speed CMOS static RAM with 10 ns access time, TTL-compatible I/O, and automatic CE-controlled power-down. It operates at 5 V ±0.5 V over –40 °C to +85 °C, draws 80 mA active current and 3 mA CMOS standby current (ISB2), and supports 2.0 V data retention-used in legacy industrial controllers requiring fast, low-power, pin-compatible SRAM replacement.

For engineers reviewing the CY7C107D-10VXI datasheet, CY7C107D-10VXI pinout, CY7C107D-10VXI application, or CY7C107D-10VXI equivalent, key selection criteria include its 28-pin 400-mil SOJ package, TTL-level input compatibility (VIH = 2.2 V min), 10 ns tAA timing, automatic CE-driven power-down, and suitability for systems where CMOS input thresholds are not required.

Technical Context

This SRAM implements a synchronous, address-decoded 1M×1 array with dual-stage decoding (row/column), on-chip sense amplifiers, and tri-state output drivers controlled by CE and WE. Its TTL-compatible inputs accept VIH ≥ 2.2 V and VIL ≤ 0.8 V, enabling direct interfacing with legacy 5 V microcontrollers and FPGAs without level-shifting.

The device enters low-power ISB2 mode (<3 mA) when CE is deasserted (HIGH) under CMOS input conditions (VIN > VCC–0.3 V or <0.3 V), and transitions DOUT to high-impedance within 5 ns of CE HIGH. Data retention is guaranteed down to 2.0 V VCC with no clock or address activity required.

Key Specifications

Pinout & Package

Package: 28-pin 400-mil wide molded SOJ (Small Outline J-lead), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with CY7C107B-10VXI, the CY7C107D-10VXI delivers 65% lower standby current and Pb-free compliance; versus AS6C1008-10TIN, it trades 3 mA ISB2 for guaranteed TTL interoperability-making it optimal for retrofitting aging industrial hardware without signal conditioning.

Availability

CY7C107D-10VXI is available at Aetrix Electronics and suitable for industrial PLC I/O modules, legacy telecom line cards, military avionics display controllers, and automotive ECU calibration memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C107D-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions for industrial, automotive, and consumer applications.

CY7C107D belongs to Cypress's legacy high-speed parallel SRAM product line, designed specifically for drop-in replacement of obsolete TTL-compatible memories in long-lifecycle industrial and defense systems.

FAQ

Is CY7C107D-10VXI compatible with 3.3 V systems?

No. The device requires 5.0 V ±0.5 V supply and is specified only for 5 V operation. Its TTL-compatible inputs (VIH ≥ 2.2 V) and outputs (VOH ≥ 2.4 V) are not guaranteed to interface reliably with 3.3 V logic families without level translation. Operating outside 4.5–5.5 V violates Absolute Maximum Ratings and may cause data corruption or accelerated wear.

What is the maximum clock frequency supported for continuous read cycles?

The device supports up to 100 MHz read cycles, derived from its 10 ns tRC (read cycle time). This assumes proper AC loading (30 pF), 3 ns input rise/fall times, and 1.5 V timing reference levels. Sustained operation at this rate requires adequate PCB layout, decoupling, and thermal management given its 80 mA ICC and θJA of 58.76 °C/W.

Can CY7C107D-10VXI be used with modern microcontrollers like STM32 or RP2040?

Only with level-shifting circuitry. Its TTL input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) do not meet the CMOS VIH requirement (≥3.5 V at 5 V VDD) of most modern MCUs. Direct connection risks read failures or excessive input leakage. Use a dedicated level translator such as TXB0108 or discrete resistor-divider networks validated per AN6081.

Does the device require an external clock or refresh signal?

No. As a static RAM, CY7C107D-10VXI is fully asynchronous and requires no clock, refresh, or periodic access to retain data. Data remains valid as long as VCC stays ≥2.0 V and CE remains HIGH in retention mode. All timing is controlled solely by CE, WE, and address transitions per the truth table and switching waveforms in the datasheet.