Infineon Technologies CY7C1081DV33-12BAXI

Overview

CY7C1081DV33-12BAXI from Cypress Semiconductor is a 64-Mbit (4 M × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V ±0.3 V operation, and automatic CE power-down mode. It supports byte-wide writes via independent BHE/ BLE controls and delivers 300 mA active current and 100 mA CMOS standby current. Used in industrial embedded systems requiring deterministic timing and nonvolatile data retention at 2.0 V.

For engineers reviewing the CY7C1081DV33-12BAXI datasheet, CY7C1081DV33-12BAXI pinout, CY7C1081DV33-12BAXI application, or CY7C1081DV33-12BAXI equivalent, key selection criteria include tAA = 12 ns read timing, dual chip enable (CE1/CE2) logic for memory expansion, FBGA-48 package compatibility, and 2.0-V data retention capability under power loss conditions.

Technical Context

The CY7C1081DV33-12BAXI implements a synchronous, address-decoded SRAM array with independent high- and low-byte write enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its dual CE architecture (CE1 LOW + CE2 HIGH) allows hierarchical memory mapping and seamless bank expansion in multi-chip configurations.

It features TTL-compatible I/Os, automatic power-down on chip deselect, and high-impedance outputs during deselection, OE HIGH, or write operations. AC timing guarantees include tDOE = 7 ns (OE to data valid), tHZOE = 7 ns (OE HIGH to high-Z), and tLZCE = 3 ns (CE assertion to low-Z), supporting tight bus timing in real-time controllers.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), JEDEC MO-246AC compliant, 6 mm × 8 mm body, 0.8 mm ball pitch, bottom-side solder termination.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar parallel SRAM applications.

Compared with AS6C8016-12BIN and IS61LV51216AL-12MLI, the CY7C1081DV33-12BAXI uniquely combines dual CE expansion, independent byte write, and guaranteed 2.0 V data retention - making it optimal for safety-critical industrial and avionics buffers where deterministic behavior and state preservation are mandatory.

Availability

CY7C1081DV33-12BAXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, avionics sensor logging, and medical imaging frame storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1081DV33-12BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system-on-chip solutions for industrial, automotive, and aerospace applications.

The CY7C1081DV33 belongs to Cypress's high-speed parallel SRAM product line, engineered specifically for deterministic-latency, low-power, and fail-safe data buffering in mission-critical embedded systems.

FAQ

What is the minimum VCC required for reliable operation?

The CY7C1081DV33-12BAXI requires VCC ≥ 3.0 V for full functionality. Operation begins 100 μs after VCC reaches typical 3.3 V. Below 3.0 V, only data retention at 2.0 V is guaranteed - no read/write operations are supported in that range.

Can CE1 and CE2 be tied together for simplified interface?

No - CE1 and CE2 implement complementary logic (CE1 LOW AND CE2 HIGH activates the device). Tying them together violates the required logic states and forces the device into permanent deselected or undefined mode per the truth table on page 9 of the datasheet.

Does the device support asynchronous burst reads?

No - the CY7C1081DV33-12BAXI is a static RAM with no internal burst counter or sequential addressing logic. Each read requires a full address setup; burst transfers must be managed externally by the controller or FPGA.

Is the FBGA-48 package RoHS-compliant and lead-free?

Yes - the "X" suffix in CY7C1081DV33-12BAXI denotes Pb-free (lead-free) construction per JEDEC J-STD-609, with matte tin finish on all balls and full compliance with RoHS Directive 2011/65/EU.