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Infineon Technologies CY7C109B-12VC
- Part No.:
- CY7C109B-12VC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C109B-12VC.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,445
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Product details
Overview
CY7C109B-12VC from Cypress Semiconductor is a 128K × 8 (131,072 × 8) high-speed CMOS static RAM with 12 ns access time, 5 V supply, TTL-compatible I/O, and dual chip enable (CE1 active-low, CE2 active-high) for flexible memory expansion. It operates in commercial temperature range (0°C to +70°C) and supports automatic power-down when deselected.
For engineers reviewing the CY7C109B-12VC datasheet, CY7C109B-12VC pinout, CY7C109B-12VC application, or CY7C109B-12VC equivalent, key selection criteria include tAA = 12 ns read timing, ISB1 ≤ 45 mA standby current under TTL input conditions, 2.0 V data retention capability, and compatibility with SOJ-32 (400-mil) and TSOP-I-32 packages.
Technical Context
The CY7C109B-12VC implements a fully decoded 17-bit address space (A0–A16) driving a 131,072-word × 8-bit SRAM array with tri-state bidirectional I/Os (I/O0–I/O7). Its dual CE architecture enables hierarchical memory mapping without external logic.
Read operations require CE1 = LOW, CE2 = HIGH, OE = LOW, and WE = HIGH; write operations require CE1 = LOW, CE2 = HIGH, WE = LOW, and OE = HIGH or floating. Output high-impedance is guaranteed during deselect (CE1 HIGH or CE2 LOW), output disable (OE HIGH), or write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 131,072 × 8 bits - supports byte-wide data bus interfacing without width conversion logic |
| Access Time (tAA) | 12 ns - enables direct interface with 80 MHz system clocks in synchronous designs |
| Supply Voltage | 5.0 V ±10% - compatible with legacy 5 V TTL/CMOS logic families |
| Active Current (ICC) | 90 mA max - defines thermal budget for dense PCB layouts with multiple SRAMs |
| Standby Current (ISB1) | 45 mA max - measured under TTL input thresholds; critical for low-power sleep modes |
| Data Retention Voltage | 2.0 V - allows battery-backed operation during main power loss without data corruption |
| Input/Output Compatibility | TTL-level - eliminates need for level shifters when interfacing with 74LS/ALS logic or microcontrollers |
Pinout & Package
Package: 32-pin SOJ (400-mil width), JEDEC MS-012AC compliant; also available in 32-pin TSOP Type I.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit unidirectional address bus; A16 is MSB for full 128K addressing |
| I/O0–I/O7 | Bidirectional Data I/O | 8-bit tristatable data bus; high-impedance during deselect, write, or OE HIGH |
| CE1 | Chip Enable 1 | Active-low primary chip select; must be LOW with CE2 HIGH to enable device |
| CE2 | Chip Enable 2 | Active-high secondary chip select; provides AND-gated chip selection with CE1 |
| OE | Output Enable | Active-low control for output drivers; does not affect write operations |
| WE | Write Enable | Active-low signal controlling write latching; independent of OE state |
| VCC | Power Supply | +5 V supply pin; decoupling required within 10 mm of pin per high-speed layout rules |
| GND | Ground | Reference return path; dedicated GND pin (Pin 16) minimizes ground bounce |
| NC | No Connect | Pin 15 (SOJ); internally unconnected - must remain floating, not tied to VCC/GND |
Key Features
| Feature | Design Value |
|---|---|
| Dual Chip Enable Architecture | CE1 (active-low) and CE2 (active-high) allow hierarchical decoding for multi-chip memory banks without glue logic |
| Automatic Power-Down | Enters low-current standby (ISB1 ≤ 45 mA) when CE1 HIGH or CE2 LOW - reduces system idle power by >85% |
| 2.0 V Data Retention | Maintains stored data at VCC ≥ 2.0 V with CE deselected - enables seamless backup via coin-cell or supercapacitor |
| TTL-Compatible I/O | VIH = 2.2 V min, VOL = 0.4 V max - ensures robust noise margin and direct interface with legacy 5 V controllers |
| Tri-State Output Drivers | Guaranteed high-impedance during CE/OE/WE transitions - prevents bus contention in shared-data-bus systems |
Applications
| Industrial PLC Memory Buffer | Legacy Embedded Controller Cache |
|---|---|
Use Scenario: Storing real-time I/O status and configuration registers in programmable logic controllers operating in factory environments with 0°C to +70°C ambient. IC Role / Device Role / Timing Role: Byte-accessible nonvolatile shadow RAM holding firmware variables and process data between controller resets. Use Value: 12 ns tAA enables deterministic response to fast scan-cycle interrupts; 2.0 V retention preserves critical state during brownout events. | Use Scenario: Serving as fast scratchpad memory for 8-bit/16-bit microcontrollers (e.g., 8051, Z80 derivatives) in medical instrumentation and point-of-sale terminals. IC Role / Device Role / Timing Role: Primary working RAM mapped into CPU address space via simple address decoding using CE1/CE2. Use Value: TTL compatibility eliminates level-shifting components; SOJ-32 package supports wave-soldered industrial PCB assembly. |
| Communications Protocol Stack Buffer | Test Equipment Pattern Memory |
Use Scenario: Holding packet buffers and protocol state tables in serial communication modules (RS-232/485 gateways) requiring deterministic latency. IC Role / Device Role / Timing Role: Dedicated SRAM block accessed by UART DMA controllers with strict tOHA = 3 ns hold timing compliance. Use Value: tACE = 12 ns guarantees valid data within one clock cycle of CE assertion - essential for jitter-sensitive link layer timing. | Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) where waveform repeatability and timing precision are critical. IC Role / Device Role / Timing Role: High-speed pattern store synchronized to 80 MHz pattern generator clocks using address strobes derived from CE1/OE. Use Value: 12 ns tAA and tWC support 83.3 MHz effective throughput; low CIN/COUT (9/8 pF) minimizes signal integrity degradation on long trace runs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-12ZC | Same 128K×8 organization, 12 ns speed, but uses single CE (active-low) and has higher ISB2 (2 µA vs 10 mA ISB1) | Lacks dual CE architecture - requires external logic for bank selection in multi-SRAM systems | Select when ultra-low standby current (2 µA) is prioritized over expandability and legacy interface simplicity |
| IS61LV1024-12T | 128K×8, 12 ns, 3.3 V core (with 5 V tolerant I/O), lower ICC (60 mA), no 2.0 V retention mode | Requires level translation for pure 5 V systems; incompatible with battery-retention use cases | Select for mixed-voltage systems where 3.3 V logic coexists with 5 V peripherals and lowest active power is critical |
Compared with AS6C1008-12ZC and IS61LV1024-12T, the CY7C109B-12VC uniquely balances 5 V TTL compatibility, dual CE expandability, and 2.0 V data retention - making it irreplaceable in legacy industrial controllers requiring zero-modification drop-in upgrades and brownout resilience.
Availability
CY7C109B-12VC is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy embedded controller cache, communications protocol stack buffers, and test equipment pattern memory requiring stable component supply across extended production lifecycles.
Supply support for CY7C109B-12VC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.
The CY7C109B belongs to Cypress's legacy high-speed parallel SRAM product line, designed specifically for 5 V systems requiring deterministic timing, TTL interoperability, and robust data retention during power interruption.
FAQ
What is the minimum VCC required to retain data in CY7C109B-12VC?
The CY7C109B-12VC guarantees data retention down to VCC = 2.0 V when CE1 is deselected (HIGH) or CE2 is deselected (LOW), with all inputs held within safe voltage limits. This is verified per the Data Retention Characteristics table (VDR = 2.0 V, ICCDR ≤ 150 µA) and applies only to the L-version variants - however, the -12VC commercial grade supports this feature as confirmed in the "Data Retention Characteristics" section of Rev. *C datasheet.
Can CY7C109B-12VC operate with CE2 permanently tied HIGH?
Yes - CE2 may be hardwired HIGH (e.g., to VCC) to simplify decoding, reducing the address decoder to CE1 and OE only. This configuration retains full functionality but forfeits the hierarchical bank selection capability enabled by dynamic CE2 control. The truth table explicitly lists "L H X X" as valid write/read mode, confirming CE2 = HIGH is fully supported.
Is Pin 15 (NC) on the SOJ-32 package required to be left floating?
Yes - Pin 15 is designated NC (No Connect) and is not bonded to the die. Per the datasheet note "NC pins are not connected on the die," it must remain unconnected - neither tied to VCC nor GND - to avoid unintended leakage paths or ESD susceptibility. Board layout guidelines require this pin to be omitted from routing and left as an open pad.
How does automatic power-down behave when CE1 and CE2 are simultaneously asserted incorrectly?
When CE1 = HIGH and CE2 = LOW (deselected state), the device enters automatic power-down with ISB1 ≤ 45 mA. If both CE1 and CE2 are driven to invalid states (e.g., CE1 = HIGH and CE2 = HIGH), the device remains deselected and maintains standby current - no damage occurs, but outputs stay high-Z and no access is possible. The truth table confirms "H X" and "X L" both yield High-Z Power-Down Standby.
CY7C109B-12VC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
CY7C109B-12VC FAQ
1.How can I place an order for CY7C109B-12VC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C109B-12VC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C109B-12VC reliable?
The price and inventory of CY7C109B-12VC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C109B-12VC is usually 5 days.
3.What payment methods are accepted for CY7C109B-12VC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C109B-12VC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C109B-12VC?
CY7C109B-12VC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C109B-12VC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C109B-12VC?
For technical support, including CY7C109B-12VC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C109B-12VC requirements.
6.How does Aetrix verify that CY7C109B-12VC is sourced from the original manufacturer or authorized distributors?
All CY7C109B-12VC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C109B-12VC meets industry standards.
7.What is the process for return or replacement of CY7C109B-12VC?
All CY7C109B-12VC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C109B-12VC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C109B-12VC part is unused and in its original packaging.
Return procedure for CY7C109B-12VC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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