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Infineon Technologies CY7C109B-12ZXCT

Part No.:
CY7C109B-12ZXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
32-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY7C109B-12ZXCT.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,467

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Product details

Overview

CY7C109B-12ZXCT from Cypress Semiconductor is a 128K × 8 (131,072 words × 8-bit) high-speed CMOS static RAM with 12 ns access time, 5 V supply, TTL-compatible I/O, and automatic power-down when deselected. It supports memory expansion via dual chip enables (CE1 active-low, CE2 active-high), OE control, and tri-state I/O drivers - deployed in industrial embedded controllers requiring deterministic low-latency data storage.

For engineers reviewing the CY7C109B-12ZXCT datasheet, CY7C109B-12ZXCT pinout, CY7C109B-12ZXCT application, or CY7C109B-12ZXCT equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 ≤ 10 mA CMOS standby current, 2.0 V data retention capability, and compatibility with 32-pin TSOP Type I (Pb-free) packaging for space-constrained PCB layouts.

Technical Context

The CY7C109B-12ZXCT implements a full CMOS SRAM core with row/column decoding, sense amplifiers, and input/output buffers. Its dual CE architecture (CE1 active-low + CE2 active-high) enables hierarchical memory mapping without external logic, while OE and WE controls decouple read/write enable timing from chip selection.

Power management is handled through automatic CE-driven power-down: when CE1 is HIGH or CE2 is LOW, ICC drops to ≤10 mA (CMOS mode) or ≤2 mA (L version), and data retention is guaranteed down to VCC = 2.0 V with no clock or refresh required.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 131,072 × 8 bits - provides 128 KB byte-addressable storage without interleaving or banking logic
Access Time (tAA) 12 ns - guarantees sub-83 MHz random read throughput in synchronous bus interfaces
VCC Supply 5.0 V ±10% - compatible with legacy 5 V TTL/CMOS system rails and level-shifted address/data buses
Standby Current (ISB2) ≤10 mA at VCC max - enables low-power hold mode during processor sleep without external power gating
Data Retention Voltage 2.0 V - maintains stored contents during brown-out or controlled power-down sequences
Output Drive TTL-compatible (VOH ≥ 2.4 V, VOL ≤ 0.4 V @ IOL = 8 mA) - directly interfaces with 74LS/ALS logic without buffers
Package 32-pin TSOP Type I, Pb-free - surface-mount footprint optimized for automated assembly and thermal relief in dense layouts

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP) Type I, 10.16 mm × 20.95 mm body, 0.5 mm lead pitch, Pb-free termination.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus supporting full 131,072-word addressing; no internal latching - requires stable setup/hold relative to CE/OE
I/O0–I/O7 Bi-directional Data Bus 8-bit multiplexed input/output with tri-state control; high-impedance during deselect, write, or OE HIGH
CE1 Chip Enable 1 Active-low primary chip select; device enters power-down if HIGH, regardless of CE2 state
CE2 Chip Enable 2 Active-high secondary chip select; must be HIGH with CE1 LOW for normal operation; enables multi-chip decode trees
OE Output Enable Active-low control for output buffer; HIGH forces I/O pins to high-Z even during valid read cycles
WE Write Enable Active-low signal initiating write; asserts write cycle only when CE1 = LOW and CE2 = HIGH
VCC Power Supply +5 V supply pin; bypassing with 0.1 µF ceramic capacitor near pin recommended for noise immunity
GND Ground Signal and power return reference; separate ground plane connection improves noise margin and timing stability

Key Features

Feature Design Value
12 ns Access Time Enables direct interface with 8051, Z80, and 68K-family microcontrollers running at ≤8 MHz without wait states
Dual Chip Enable Logic Eliminates need for external AND/OR gates in multi-SRAM systems - CE1/CE2 allow 2:4 or 3:8 decode with single 74HC138
Automatic Power-Down Reduces system standby power by >97% vs. active mode (ICC = 90 mA → ISB2 = 10 mA) without software intervention
2.0 V Data Retention Permits safe power sequencing in mixed-voltage systems - memory retains content while core logic resets or reboots
TTL-Compatible I/O Direct connection to legacy microprocessor buses (e.g., Intel 8088, Motorola 68000) without level translators or series resistors

Applications

Industrial PLC Data Buffer Legacy Microcontroller Cache

Use Scenario: Real-time I/O scanning in programmable logic controllers where sensor inputs and actuator outputs require fast, non-volatile shadow RAM.

IC Role / Device Role / Timing Role: Byte-wide static RAM serving as dual-port-accessible data buffer between CPU and fieldbus interface ASICs.

Use Value: 12 ns tAA ensures deterministic response within 100 µs scan cycles; 2.0 V retention preserves last-known state during AC line dropout.

Use Scenario: External program/data memory extension for 8-bit microcontrollers (e.g., 8051 derivatives) in medical diagnostic instruments.

IC Role / Device Role / Timing Role: Off-chip code and variable storage mapped into linear address space using hardware address decoding.

Use Value: Dual CE architecture simplifies bank switching logic; TTL-compatible I/O avoids signal integrity issues on long PCB traces.

Automotive Engine Control Unit Test Equipment Pattern Memory

Use Scenario: Storing calibration tables and real-time sensor logs in engine control units operating across –40°C to +125°C ambient range.

IC Role / Device Role / Timing Role: Non-refreshing SRAM used for critical runtime variables and fault-code history with guaranteed data integrity.

Use Value: Industrial-grade temperature rating and 10 mA ISB2 support extended sleep modes while preserving emissions compliance data.

Use Scenario: High-speed pattern storage in automated test equipment generating digital stimulus waveforms at 83 MHz.

IC Role / Device Role / Timing Role: Static memory array holding vector sequences fed to FPGA-based pattern generators via parallel bus.

Use Value: 12 ns tAA matches FPGA I/O timing budgets; tri-state I/O allows shared bus arbitration with multiple waveform sources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS6C1008-12ZIN Same 128K × 8 organization and 12 ns speed, but uses single active-low CE and lacks CE2; lower standby current (3 µA) but no 2.0 V retention Requires redesign of chip-select logic; unsuitable for brown-out retention-critical systems Select when ultra-low standby dominates over power-loss resilience and board space permits simplified decode
IS61LV1024-12ML 128K × 8, 12 ns, 3.3 V core (with 5 V tolerant I/O); higher speed margin at 3.3 V but incompatible with pure 5 V systems Needs level-shifting or regulator change; not drop-in for legacy 5 V designs Choose for new 3.3 V platforms prioritizing lower power and future-proofing over backward compatibility

Compared with AS6C1008-12ZIN and IS61LV1024-12ML, the CY7C109B-12ZXCT uniquely combines 5 V TTL compatibility, dual CE flexibility, and 2.0 V data retention - making it irreplaceable in legacy industrial and automotive systems where voltage robustness and decode simplicity are non-negotiable.

Availability

CY7C109B-12ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller memory expansion, and automotive ECU calibration storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C109B-12ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C109B belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered specifically for zero-wait-state interfacing with 8/16-bit microprocessors and real-time control systems demanding deterministic access and power resilience.

FAQ

What is the maximum operating frequency supported by CY7C109B-12ZXCT?

The CY7C109B-12ZXCT has a 12 ns access time (tAA), enabling reliable operation up to approximately 83 MHz in read cycles when interfaced with appropriate bus timing margins. It does not operate synchronously - maximum frequency depends on system-level setup/hold timing around CE, OE, and address stability, not an internal clock.

Does CY7C109B-12ZXCT require external refresh circuitry?

No. As a static RAM, the CY7C109B-12ZXCT retains data indefinitely as long as power is applied and VCC remains ≥2.0 V. It contains no dynamic cells or charge pumps and needs no refresh cycles, timers, or external support circuitry - unlike DRAM or pseudo-SRAM devices.

Can CY7C109B-12ZXCT be used with 3.3 V logic interfaces?

Its inputs are 5 V tolerant (VIH up to VCC + 0.3 V, VIL down to –0.3 V), but outputs swing to TTL levels (VOH ≥ 2.4 V, VOL ≤ 0.4 V) under 5 V supply. Direct connection to 3.3 V-only receivers risks overvoltage; use resistor dividers or level translators for safe interfacing with 3.3 V FPGAs or microcontrollers.

Is the TSOP package of CY7C109B-12ZXCT RoHS compliant?

Yes - the "X" suffix in ZXCT denotes Pb-free (RoHS-compliant) construction. The device meets JEDEC J-STD-609 Category 1 marking requirements and uses matte tin terminations on all leads, verified per Cypress's official product change notices and material declarations.

CY7C109B-12ZXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
32-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

CY7C109B-12ZXCT FAQ

1.How can I place an order for CY7C109B-12ZXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C109B-12ZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C109B-12ZXCT reliable?

The price and inventory of CY7C109B-12ZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C109B-12ZXCT is usually 5 days.

3.What payment methods are accepted for CY7C109B-12ZXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C109B-12ZXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C109B-12ZXCT?

CY7C109B-12ZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C109B-12ZXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C109B-12ZXCT?

For technical support, including CY7C109B-12ZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C109B-12ZXCT requirements.

6.How does Aetrix verify that CY7C109B-12ZXCT is sourced from the original manufacturer or authorized distributors?

All CY7C109B-12ZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C109B-12ZXCT meets industry standards.

7.What is the process for return or replacement of CY7C109B-12ZXCT?

All CY7C109B-12ZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C109B-12ZXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C109B-12ZXCT part is unused and in its original packaging.

Return procedure for CY7C109B-12ZXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C109B-12ZXCT Tags

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