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Infineon Technologies CY7C109BN-12ZXCT

Part No.:
CY7C109BN-12ZXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
32-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY7C109BN-12ZXCT.pdf
Description:
IC SRAM 1MBIT PARALLEL 32TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,763

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Product details

Overview

CY7C109BN-12ZXCT from Cypress Semiconductor is a 128K × 8 (131,072 × 8) high-speed CMOS static RAM with 12 ns access time, 5 V supply, TTL-compatible I/O, and automatic CE power-down. It operates in commercial temperature range (0°C to +70°C) and supports memory expansion via dual chip enables (CE1 active-low, CE2 active-high) and three-state outputs. Used in embedded controllers, industrial PLCs, and legacy instrumentation requiring fast, reliable non-volatile data buffering.

For engineers reviewing the CY7C109BN-12ZXCT datasheet, CY7C109BN-12ZXCT pinout, CY7C109BN-12ZXCT application, or CY7C109BN-12ZXCT equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 standby current ≤10 mA at CMOS inputs, 2.0 V data retention capability, and TSOP Type I (32-pin) package compatibility with space-constrained PCB layouts.

Technical Context

This SRAM implements a full asynchronous interface with independent address decoding (A0–A16), bidirectional 8-bit I/O bus (I/O0–I/O7), and four control signals: CE1 (active-low), CE2 (active-high), OE (active-low), and WE (active-low). Its internal architecture uses a 512 × 256 × 8 memory array with sense amplifiers and input buffers optimized for low-noise, high-speed read/write cycles.

The device supports three distinct operational modes: active read (CE1=L, CE2=H, OE=L, WE=H), active write (CE1=L, CE2=H, WE=L), and automatic power-down (CE1=H or CE2=L), where ICC drops to ≤10 mA and data is retained down to VCC = 2.0 V. Output impedance transitions are specified under 5 pF and 30 pF loads per JEDEC AC test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
tAA 12 ns - maximum address-to-data-valid delay ensures deterministic timing in 8-MHz bus systems without wait states.
VCC 5 V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5 V system power domains.
ICC (active) 90 mA max - defines worst-case power draw during continuous read/write cycling at fMAX = 83.3 MHz.
ISB2 (standby) 10 mA max - CMOS-input power-down current enabling low-quiescent operation when deselected.
VDR 2.0 V - minimum supply voltage sustaining data integrity during brown-out or battery-backup scenarios.
Package 32-pin TSOP Type I (8 × 20 mm) - surface-mount footprint supporting automated assembly and thermal relief in dense layouts.
Operating Range 0°C to +70°C - commercial-grade temperature specification suitable for office, lab, and non-harsh industrial environments.

Pinout & Package

The CY7C109BN-12ZXCT is housed in a 32-pin Thin Small Outline Package (TSOP Type I), 8 mm × 20 mm body, with gull-wing leads and lead pitch of 0.5 mm. Pin 1 is marked by a beveled corner or notch on the top surface.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus selecting one of 131,072 memory locations; internally decoded without external logic.
I/O0–I/O7 Bidirectional Data Bus 8-bit tristatable I/O lines shared for read and write; high-impedance when CE1=H, CE2=L, or OE=H.
CE1 Chip Enable 1 Active-low enable; must be LOW with CE2 HIGH to activate memory; primary selection signal in multi-chip systems.
CE2 Chip Enable 2 Active-high enable; complements CE1 for flexible hierarchical memory mapping and bank selection.
OE Output Enable Active-low control of output drivers; enables data readout only when CE1=L and CE2=H.
WE Write Enable Active-low write strobe; initiates write cycle when CE1=L and CE2=H; latches data on rising edge.
VCC Power Supply +5 V supply pin; decoupling capacitor (0.1 µF ceramic) required within 10 mm for stable high-speed operation.
GND Ground Reference Signal and power ground return; requires low-inductance connection to minimize switching noise coupling.

Key Features

Feature Design Value
12 ns access time Enables direct interfacing with 8051, Z80, and 68000-family microcontrollers without glue logic or wait-state insertion.
Dual chip enable (CE1/CE2) Supports seamless 256 KB+ memory expansion using simple NAND or AND gating-no address decoder IC needed.
Automatic CE power-down Reduces standby current to ≤10 mA when deselected, critical for low-power modes in portable instrumentation.
2.0 V data retention Maintains stored contents during brown-out or backup-battery switchover, eliminating need for external NVSRAM or battery-backed RAM.
TTL-compatible I/O Eliminates level-shifting circuitry when interfacing with legacy 5 V logic families, reducing BOM count and layout complexity.

Applications

Industrial PLC Data Buffering Legacy Test Equipment Memory Cache

Use Scenario: Real-time I/O scan cycle in programmable logic controllers where sensor data must be written and retrieved within fixed microsecond windows.

IC Role / Device Role / Timing Role: Asynchronous data buffer holding process variables between CPU fetches and field I/O updates; timing-critical due to deterministic tAA = 12 ns.

Use Value: Eliminates wait states in ladder-logic execution, maintaining 10 kHz scan rates across 128 KB of tag memory without performance penalty.

Use Scenario: High-speed waveform capture in digital storage oscilloscopes and logic analyzers requiring burst-mode memory writes at >10 MS/s.

IC Role / Device Role / Timing Role: Primary acquisition buffer storing sampled analog/digital traces; relies on tWC = 12 ns write cycle and tSD = 7 ns data setup for accurate edge alignment.

Use Value: Enables single-shot capture depth up to 131k samples at full instrument bandwidth without FIFO bottlenecks or external DRAM latency.

Embedded Controller Boot ROM Shadow Communications Protocol Stack Buffer

Use Scenario: Fast shadowing of slower boot ROM contents into faster local RAM during system startup in telecom baseband processors.

IC Role / Device Role / Timing Role: Static RAM used as copy-on-boot cache; leverages CE1/CE2 for seamless address-mapped replacement of ROM space during initialization.

Use Value: Reduces boot time by 40% versus direct ROM execution, while preserving deterministic timing for real-time interrupt response.

Use Scenario: Frame-level buffering in RS-485/Modbus gateways handling multiple concurrent serial protocols with variable packet lengths.

IC Role / Device Role / Timing Role: Dual-port-like operation via rapid CE toggling; stores inbound/outbound protocol frames with guaranteed tHZOE = 6 ns output disable for bus arbitration.

Use Value: Prevents bus contention during simultaneous transmit/receive handshaking, ensuring error-free Modbus RTU frame integrity at 115.2 kbps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV1024-12T Same density (128K × 8), 12 ns access, but 3.3 V only; no 5 V tolerance; different pinout (SOJ vs TSOP). Requires level shifters or redesign for 5 V systems; unsuitable for drop-in replacement in legacy 5 V designs. Select only if migrating to 3.3 V architecture and board re-spin is acceptable.
AS6C1008-12ZIN 128K × 8, 12 ns, 5 V, TSOP I package-but lacks CE2 pin; uses single CE (active-low) and no automatic power-down below 15 mA. No hierarchical enable scheme; higher standby current limits use in battery-backed or low-power sleep modes. Prefer for cost-sensitive, single-bank applications where CE2 functionality and ultra-low ISB2 are not required.

Compared with IS61LV1024-12T and AS6C1008-12ZIN, the CY7C109BN-12ZXCT uniquely delivers 5 V operation, dual CE support, and 10 mA CMOS standby current in a TSOP I package-making it the only option for retrofitting 5 V industrial systems needing both expandability and low-power retention.

Availability

CY7C109BN-12ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy test equipment memory caching, embedded controller boot ROM shadowing, and communications protocol stack buffering requiring stable component supply across long-lifecycle production programs.

Supply support for CY7C109BN-12ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial, automotive, and consumer applications.

The CY7C109BN belongs to Cypress's legacy high-speed parallel SRAM product line, designed specifically for 5 V embedded systems requiring deterministic timing, low-power standby, and easy memory expansion without external decoding logic.

FAQ

What is the minimum VCC required to retain data in CY7C109BN-12ZXCT?

The device guarantees data retention down to VCC = 2.0 V when CE1 is high or CE2 is low and all inputs are within valid CMOS thresholds. This mode draws ≤150 µA (ICCDR), enabling operation during brown-out or battery backup without external NVSRAM. Retention is not guaranteed below 2.0 V.

Can CY7C109BN-12ZXCT be used with 3.3 V logic interfaces?

No-its inputs require VIH ≥ 2.2 V and VIL ≤ 0.8 V referenced to a 5 V supply; driving it directly from 3.3 V logic violates VIH spec (2.2 V min) and risks unreliable reads. Level translation (e.g., TXB0108) or 5 V-tolerant 3.3 V drivers are mandatory for safe interfacing.

Does CY7C109BN-12ZXCT support byte-wide writes?

No-it has no byte-enable (UB/LB) pins. All eight bits (I/O0–I/O7) are written simultaneously during each write cycle. To update a single byte, the host must read-modify-write the full 8-bit word, increasing software overhead and bus traffic.

What is the meaning of "ZXC" in the part number CY7C109BN-12ZXCT?

"ZXC" denotes RoHS-compliant, lead-free TSOP Type I packaging (per JEDEC MO-153), with matte tin finish and halogen-free molding compound. The "T" suffix indicates tape-and-reel packaging (1,000 units per reel), standard for SMT production use.

CY7C109BN-12ZXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
32-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP I

CY7C109BN-12ZXCT FAQ

1.How can I place an order for CY7C109BN-12ZXCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C109BN-12ZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C109BN-12ZXCT reliable?

The price and inventory of CY7C109BN-12ZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C109BN-12ZXCT is usually 5 days.

3.What payment methods are accepted for CY7C109BN-12ZXCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C109BN-12ZXCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C109BN-12ZXCT?

CY7C109BN-12ZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C109BN-12ZXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C109BN-12ZXCT?

For technical support, including CY7C109BN-12ZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C109BN-12ZXCT requirements.

6.How does Aetrix verify that CY7C109BN-12ZXCT is sourced from the original manufacturer or authorized distributors?

All CY7C109BN-12ZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C109BN-12ZXCT meets industry standards.

7.What is the process for return or replacement of CY7C109BN-12ZXCT?

All CY7C109BN-12ZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C109BN-12ZXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C109BN-12ZXCT part is unused and in its original packaging.

Return procedure for CY7C109BN-12ZXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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