Infineon Technologies CY7C109BN-20ZXC

Overview

CY7C109BN-20ZXC from Cypress Semiconductor is a 128K × 8 (131,072 × 8) high-speed CMOS static RAM with 20 ns maximum access time, 5 V ±10% supply, TTL-compatible I/O, and automatic CE power-down. It operates across commercial temperature range (0°C to +70°C) in Pb-free 32-pin TSOP Type I package and is used in embedded controllers requiring fast, low-power volatile memory with deterministic timing.

For engineers reviewing the CY7C109BN-20ZXC datasheet, CY7C109BN-20ZXC pinout, CY7C109BN-20ZXC application, or CY7C109BN-20ZXC equivalent, key selection criteria include tAA = 20 ns read latency, ISB2 = 10 mA CMOS standby current, data retention at VCC = 2.0 V, and dual chip enable (CE1 active LOW, CE2 active HIGH) for flexible memory expansion in multi-bank systems.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with 17 address lines (A0–A16), eight bidirectional I/O pins (I/O0–I/O7), and three-state output drivers controlled by OE, CE1, and CE2. Its architecture supports overlapping write cycles via WE-controlled timing and guarantees data integrity during deselection via automatic power-down when CE1 is HIGH or CE2 is LOW.

The device uses standard CMOS logic thresholds (VIH = 2.2 V, VIL = 0.8 V), supports 30 pF AC load, and delivers stable VOH ≥ 2.4 V and VOL ≤ 0.4 V under full drive conditions. Its tHZOE = 8 ns and tLZCE = 3 ns ensure precise bus release timing critical for shared-data-bus microcontroller interfaces.

Key Specifications

Pinout & Package

Package: 32-pin TSOP Type I (8 × 20 mm), Pb-free, JEDEC MO-088 compliant. Pin 1 marked by notch or dot; body thickness 1.2 mm max.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV10248-20TQLI and MCM6295DWX, CY7C109BN-20ZXC uniquely combines 5 V operation, Pb-free TSOP packaging, 2.0 V data retention, and 10 mA CMOS standby - making it the sole option for drop-in replacement in legacy 5 V commercial systems needing compact, low-power, retention-capable SRAM.

Availability

CY7C109BN-20ZXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller firmware caching, medical diagnostic instrument memory, and automotive body control module log storage requiring stable component supply across extended production lifecycles.

Supply support for CY7C109BN-20ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, and USB solutions, founded in 1982 and headquartered in San Jose, California.

CY7C109BN belongs to Cypress's legacy parallel SRAM product line, designed specifically for 5 V embedded systems requiring pin-compatible, high-reliability, low-latency volatile memory with industrial-grade timing margins and robust power management.

FAQ

Is CY7C109BN-20ZXC RoHS-compliant and Pb-free?

Yes. The "ZXC" suffix explicitly denotes Pb-free construction per JEDEC J-STD-609, with matte tin lead finish and TSOP Type I package conforming to RoHS Directive 2011/65/EU. Full compliance documentation is available upon request for traceable sourcing.

Can CY7C109BN-20ZXC operate with CE1 and CE2 tied together?

No. CE1 is active LOW and CE2 is active HIGH; tying them directly creates a permanent disable condition. Proper operation requires independent control: CE1 = LOW and CE2 = HIGH for selection. External logic (e.g., inverter or decoder) is needed for single-enable interface.

What is the minimum VCC required to retain data without corruption?

Data retention is guaranteed down to VCC = 2.0 V, provided CE1 > VCC – 0.3 V or CE2 < 0.3 V and all inputs remain within valid logic ranges. Below 2.0 V, data may be lost; no partial retention or soft-error margin is specified.

Does CY7C109BN-20ZXC support asynchronous or synchronous write cycles?

It supports asynchronous writes only. Write initiation depends solely on CE1, CE2, and WE timing - no clock input is present. The internal write cycle completes within tWC = 20 ns, with data valid at the end of the overlap of CE1 LOW, CE2 HIGH, and WE LOW.