Infineon Technologies CY7C109BN-20ZXCT

Overview

CY7C109BN-20ZXCT from Cypress Semiconductor is a 128K × 8 (131,072 × 8) high-speed CMOS static RAM with 20 ns maximum access time, TTL-compatible I/O, automatic CE power-down, and 2.0V data retention. It operates at 5V ±10% over commercial temperature range (0°C to +70°C) and is used in embedded controllers, industrial PLCs, and legacy communication interface buffers where deterministic read/write timing and low standby current are required.

For engineers reviewing the CY7C109BN-20ZXCT datasheet, CY7C109BN-20ZXCT pinout, CY7C109BN-20ZXCT application, or CY7C109BN-20ZXCT equivalent, key selection considerations include tAA = 20 ns access time, ISB2 = 2 mA CMOS standby current, dual chip enable (CE1 active LOW, CE2 active HIGH), and TSOP Type I 32-pin package compatibility with space-constrained PCB layouts.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array using a 512 × 256 × 8 architecture with separate column and row decoders, sense amplifiers, and three-state I/O drivers. Its dual CE architecture enables hierarchical memory expansion without external logic, while automatic power-down activates when CE1 is HIGH or CE2 is LOW - independent of OE or WE state.

The device supports three standard read/write cycles: CE-controlled (Cycle No. 1), OE-controlled read (Cycle No. 2), and WE-controlled write with OE LOW (Cycle No. 3). Timing parameters are defined with 3 ns input transition times, 1.5 V reference levels, and 30 pF load capacitance per I/O pin, ensuring interoperability with 5 V TTL and CMOS bus systems.

Key Specifications

Pinout & Package

The CY7C109BN-20ZXCT is packaged in a 32-pin TSOP Type I (8 mm × 20 mm) with gull-wing leads, JEDEC MO-153 compliant, lead-free (Pb-free) finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with AS6C1008-20TIN and IS61LV1024-20TI, the CY7C109BN-20ZXCT uniquely supports dual CE expansion and retains data at 2.0 V - making it irreplaceable in brown-out-resilient industrial controllers and 5 V legacy bus systems requiring deterministic multi-chip addressing.

Availability

CY7C109BN-20ZXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy communication interface design, and embedded controller boot loader implementations requiring stable component supply across extended production lifecycles.

Supply support for CY7C109BN-20ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, USB, and timing solutions for industrial, automotive, and consumer applications.

The CY7C109BN belongs to Cypress's legacy parallel SRAM product line, designed specifically for 5 V TTL/CMOS system integration with emphasis on timing predictability, low standby power, and robust CE-based memory expansion in space- and cost-sensitive embedded platforms.

FAQ

What is the minimum VCC required to retain data in CY7C109BN-20ZXCT?

The device guarantees data retention down to VCC = 2.0 V when CE1 is HIGH or CE2 is LOW and all inputs are within valid logic thresholds. This is measured under ISB2 conditions (CMOS input thresholds) and does not require active refresh or external hold circuitry. Below 2.0 V, data integrity is not assured per specification.

Can CY7C109BN-20ZXCT operate with CE2 permanently tied HIGH?

Yes - CE2 may be hardwired HIGH (e.g., to VCC) to simplify design, reducing the control signal count to CE1, OE, and WE. In this configuration, CE1 becomes the sole chip enable, and the device behaves identically to a single-CE SRAM. All timing parameters remain valid per datasheet Table 6.

Does CY7C109BN-20ZXCT support battery-backed operation?

No - it is not a battery-backed SRAM (BBSRAM). While it retains data at 2.0 V, it lacks integrated lithium battery, charge circuitry, or auto-switching logic. External backup power must be implemented using discrete diodes, regulators, and supercapacitors or batteries, with careful attention to CE and WE state during switchover.

Is the TSOP package of CY7C109BN-20ZXCT RoHS-compliant?

Yes - the "ZXC" suffix denotes Pb-free (RoHS-compliant) TSOP packaging per JEDEC J-STD-609. The device meets exemption 7a (lead in glass frits and ceramic materials) and contains <1000 ppm lead by weight in solderable terminations, verified through material declarations and XRF testing per IPC-J-STD-020.