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Infineon Technologies CY7C1143KV18-400BZC

Part No.:
CY7C1143KV18-400BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1143KV18-400BZC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,417

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Product details

Overview

CY7C1143KV18 from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II+ SRAM with separate read/write ports, 400 MHz operation (900 Mbps DDR data rate), 2.0-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers full data coherency and supports concurrent read/write transactions in high-bandwidth networking packet buffers and telecom line cards.

For engineers reviewing the CY7C1143KV18 datasheet, CY7C1143KV18 pinout, CY7C1143KV18 application, or CY7C1143KV18 equivalent, key selection criteria include its 4-word burst architecture, HSTL I/O compatibility (VDDQ = 1.4–1.8 V), echo clock (CQ/CQ) timing support, and DOFF-controlled PLL mode selection between QDR II+ (2-cycle latency) and QDR I (1-cycle latency).

Technical Context

The device implements a synchronous pipelined QDR II+ architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K and K clocks, enabling true concurrent access without bus turnaround.

It integrates a phase-locked loop (PLL) for precise data placement and uses echo clocks (CQ/CQ) aligned to K/K to simplify high-speed data capture. The QVLD signal provides edge-aligned valid-data indication, and programmable output impedance via ZQ pin enables system-level termination matching.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (1M × 18 organization)
Max Clock Frequency400 MHz - enables 900 MB/s effective bandwidth via DDR interfaces on both ports
Read Latency2.0 clock cycles - configurable to 1.0 cycle via DOFF pin assertion LOW
VDD / VDDQCore VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports dual-voltage system interfacing
Interface StandardHSTL Class I inputs and variable-drive HSTL outputs - ensures signal integrity at 400 MHz
Burst LengthFour-word burst - reduces address bus frequency by 4× versus single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density routing and thermal performance

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
K, KInput clocksRising edges control all synchronous operations; K drives read port, K drives write port
CQ, CQEcho clocksFree-running, edge-aligned copies of K/K - used for source-synchronous data capture at receiver
Q[17:0]Read data outputsDDR outputs delivering four 18-bit words per read transaction; tristated when RPS is deasserted
D[17:0]Write data inputsDDR inputs accepting four 18-bit words per write transaction; ignored when WPS is deasserted
RPS, WPSPort select controlsActive-low synchronous enables - independently gate read/write operations and prevent bus contention
BWS[1:0]Byte write selectsActive-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1) - enable partial-word writes without read-modify-write
QVLDValid data indicatorOutput pulse edge-aligned with CQ/CQ - unambiguously marks valid Q[17:0] data windows
DOFFPLL disable inputWhen LOW, disables internal PLL and reverts device to QDR I timing (1-cycle latency, ≤167 MHz max)
ZQImpedance calibrationConnects to external resistor to ground - sets CQ/CQ/Q[17:0] output drive strength to match 50 Ω or 75 Ω trace impedance

Key Features

FeatureDesign Value
Separate read/write data pathsEliminates data bus turnaround delays and contention - enables deterministic 100% bus utilization in full-duplex systems
Four-word burst architectureReduces required address transition rate by 75% - lowers PCB routing complexity and EMI vs. single-word SRAMs
Programmable output impedance (ZQ)Enables dynamic drive strength tuning to match PCB trace impedance - improves signal integrity without external resistors
QVLD timing indicatorProvides explicit, clock-aligned validity window - removes need for complex setup/hold margining in FPGA/CPU receivers
DOFF-configurable latency modeHardware-selectable 1-cycle (QDR I) or 2-cycle (QDR II+) operation - supports legacy timing migration and mixed-speed designs

Applications

Packet Buffer in 10G Ethernet Switch ASICBaseband Processing Memory in 4G LTE eNodeB

Use Scenario: Stores ingress/egress packet headers and metadata in real time while supporting simultaneous classification and forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as low-latency, high-throughput buffer between MAC and traffic manager; QVLD synchronizes data capture to FPGA logic.

Use Value: 400 MHz DDR interface delivers 900 MB/s sustained bandwidth - meets line-rate buffering requirements for 10 GbE without pipeline stalls.

Use Scenario: Holds channel estimation coefficients and FFT output data during uplink/downlink processing in multi-carrier OFDMA systems.

IC Role / Device Role / Timing Role: Synchronous burst memory providing deterministic 2-cycle read latency to DSP cores; echo clocks (CQ/CQ) align with baseband processor sampling clocks.

Use Value: Four-word burst transfers match 16-QAM/64-QAM symbol sizes - eliminates per-symbol address overhead and maximizes MAC efficiency.

Line Card Memory in Optical Transport Network (OTN)Real-Time Video Frame Buffer in Broadcast Encoder

Use Scenario: Buffers OTU2/OTU3 frame payloads during grooming, mapping, and FEC insertion across multiple wavelengths.

IC Role / Device Role / Timing Role: High-reliability SRAM with full data coherency ensuring consistent payload alignment across parallel processing engines; DOFF pin enables fallback to QDR I mode during PLL calibration.

Use Value: 1.8 V core + 1.5 V I/O compatibility allows direct interfacing with SerDes PHYs - reduces level-shifting components and power loss.

Use Scenario: Stores uncompressed 1080p60 YUV422 frames for real-time color space conversion, deinterlacing, and compression pipeline staging.

IC Role / Device Role / Timing Role: Burst-access memory feeding pixel pipelines at 148.5 MHz pixel clock; HSTL I/O ensures clean transitions at 400 MHz DDR rates.

Use Value: Independent read/write ports allow concurrent frame write (ingest) and read (processing) - eliminates frame-drop risk during scene transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10PA36-Mbit (1M × 36), 250 MHz max, no echo clocks, QDR II (not II+), 1-cycle latency onlyLacks 400 MHz bandwidth and QVLD/CQ timing aids - requires tighter board layout and higher-margin capture logicSelect only if system clock ≤250 MHz and design lacks PLL support or echo-clock receiver capability
ISSI IS61WV102418BLL-10BLI18-Mbit (512K × 36), asynchronous interface, 10 ns access, no burst or DDRNo concurrent read/write, no burst, no echo clocks - bandwidth limited to ~100 MB/s, unsuitable for packet-processing throughputConsider only for cost-sensitive, non-real-time control-plane memory where latency determinism is not required

Compared with IDT72T3615L10PA and IS61WV102418BLL-10BLI, CY7C1143KV18 uniquely delivers 400 MHz DDR bandwidth with hardware-supported timing aids (QVLD, CQ/CQ, ZQ), making it the only option capable of sustaining line-rate packet buffering in 10G+ infrastructure without FPGA-based timing compensation.

Availability

CY7C1143KV18 is available at Aetrix Electronics and suitable for 10G Ethernet switch ASICs, 4G/5G baseband units, optical transport network line cards, and broadcast video encoders requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1143KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was designed specifically for deterministic, high-bandwidth buffering in packet-switched networks and baseband processing - emphasizing concurrent access, precise timing control, and system-level signal integrity.

FAQ

What is the function of the DOFF pin, and how does it affect timing behavior?

The DOFF (PLL Turn Off) pin is an active-low input that disables the internal PLL. When asserted LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When HIGH (or pulled up), the PLL is enabled and the device runs in QDR II+ mode at up to 400 MHz with 2-cycle latency. This pin allows hardware-selectable timing modes without firmware changes.

How do the CQ and CQ echo clocks differ from the main K and K clocks?

CQ and CQ are free-running, source-synchronous echo clocks derived from K and K respectively. They are edge-aligned to their corresponding input clocks but have zero skew relative to Q[17:0] output transitions. Unlike K/K, which are system-generated and may suffer routing skew, CQ/CQ travel alongside data and provide a reliable strobe for capturing valid Q[17:0] values at the receiver - critical for reliable 400 MHz DDR operation.

Can CY7C1143KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The device explicitly supports VDDQ = 1.4 V to VDD (1.8 V), including 1.5 V operation. This allows interoperability with 1.5 V HSTL-compatible FPGAs and ASICs while maintaining 1.8 V core logic stability. The HSTL output drivers are designed for this voltage range, and DC electrical characteristics (e.g., VIH/VIL thresholds) are guaranteed across the full 1.4–1.8 V VDDQ window.

What is the purpose of the ZQ pin, and how must it be connected?

ZQ is an impedance calibration input used to tune the output drive strength of Q[17:0], CQ, and CQ pins. It must be connected to a precision resistor (typically 50 Ω or 75 Ω) tied to ground - not left floating or connected directly to GND/VDDQ. The device measures this resistance and configures its output buffers to deliver 0.2 × RQ drive strength, enabling accurate on-die termination matching to PCB trace impedance without external series resistors.

CY7C1143KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1143KV18-400BZC FAQ

1.How can I place an order for CY7C1143KV18-400BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1143KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1143KV18-400BZC reliable?

The price and inventory of CY7C1143KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1143KV18-400BZC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1143KV18-400BZC transactions.

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4.How is shipping managed for CY7C1143KV18-400BZC?

CY7C1143KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1143KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1143KV18-400BZC?

For technical support, including CY7C1143KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1143KV18-400BZC requirements.

6.How does Aetrix verify that CY7C1143KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1143KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1143KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C1143KV18-400BZC?

All CY7C1143KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1143KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1143KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C1143KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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