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Infineon Technologies CY7C1145KV18-400BZXCT

Part No.:
CY7C1145KV18-400BZXCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1145KV18-400BZXCT.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,652

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Product details

Overview

CY7C1145KV18-400BZXCT from Cypress Semiconductor is a 18-Mbit QDR® II+ SRAM with 512K × 36 organization, 400 MHz clock frequency, 2.0-cycle read latency, and separate read/write DDR ports delivering 900 MT/s effective data rate. It uses HSTL I/O (VDDQ = 1.4–1.8 V), integrated PLL for precise timing, and echo clocks (CQ/CQ) to simplify high-speed data capture in networking packet buffers.

For engineers reviewing the CY7C1145KV18-400BZXCT datasheet, CY7C1145KV18-400BZXCT pinout, CY7C1145KV18-400BZXCT application, or CY7C1145KV18-400BZXCT equivalent, key selection criteria include burst depth (four 36-bit words), byte-write select granularity (BWS[3:0]), QVLD timing alignment, DOFF-controlled latency mode switching, and 165-ball FBGA (13 × 15 × 1.4 mm) thermal/mechanical constraints.

Technical Context

This device implements a synchronous pipelined QDR II+ architecture with physically isolated read and write data paths-eliminating bus turnaround overhead. It latches address inputs on alternating rising edges of K and K clocks, enabling concurrent read and write operations without arbitration delay.

The internal PLL synchronizes CQ/CQ echo clocks to K/K for deterministic data capture, while the DOFF pin toggles between 2.0-cycle (PLL enabled) and 1.0-cycle (QDR I mode, ≤167 MHz) read latency. Byte write enables (BWS[3:0]) support partial-word updates across all 36 data bits with per-byte masking.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 configuration)
Max Clock Frequency400 MHz - determines maximum sustained bandwidth of 28.8 GB/s (36-bit × 4 words × 400 MHz)
Read Latency2.0 clock cycles - fixed pipeline delay from RPS assertion to first valid Q[x] output aligned with CQ edge
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V system buses
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, thermally demanding SRAMs
Interface StandardHSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 900 MT/s DDR rates
Timing ControlDOFF pin selects PLL-on (2-cycle latency, 400 MHz) or PLL-off (1-cycle latency, ≤167 MHz) operation

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsLatched on rising edges of K/K; full 36-bit parallel input path for burst writes
Q[35:0]Synchronous read data outputsDDR outputs driven on K/K rising edges; tristated when RPS deasserted
RPS / WPSActive-low port enable controlsIndependent gating of read/write pipelines; enables depth expansion via port-select stacking
BWS[3:0]Byte write select inputsFour independent 9-bit masks (D[8:0], D[17:9], D[26:18], D[35:27]) for partial-word updates
K / KDifferential clock inputsRising-edge-triggered; K drives read path, K drives write path - eliminates skew-sensitive single-clock timing
CQ / CQFree-running echo clocksPhase-aligned copies of K/K used by external logic to sample Q[35:0] with setup/hold margin
QVLDValid data indicatorAsserted coincident with first valid Q[35:0] word on CQ/CQ edge - eliminates need for fixed delay calibration
ZQOutput impedance calibration inputConnects to external 50 Ω resistor to ground to tune CQ/Q output drive strength to match PCB trace Z₀
DOFFPLL disable controlPull LOW to bypass PLL and operate in legacy QDR I mode (1-cycle latency, reduced max frequency)

Key Features

FeatureDesign Value
Four-word burst architectureReduces address bus toggling by 75% versus single-word access - lowers EMI and simplifies routing
Separate read/write DDR portsEnables true simultaneous read+write at full bandwidth - no arbitration or turnaround cycles required
Integrated PLL with echo clocksEliminates external clock forwarding ICs and provides deterministic ±50 ps data capture window
Programmable output impedance (ZQ)Matches 50 Ω PCB traces without external series resistors - improves signal fidelity at 900 MT/s
JTAG 1149.1 boundary scanEnables production test coverage of high-density BGA interconnects without physical probe access

Applications

High-Speed Network Packet BufferTelecom Line Card Data Cache

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet switch ASICs with real-time traffic shaping.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency buffer between serializer/deserializer and traffic manager, synchronized to line-rate clocks.

Use Value: Concurrent read/write at 400 MHz enables full line-rate buffering without stall cycles - critical for lossless forwarding.

Use Scenario: Holding compressed voice/video frames in multi-service access gateways during jitter compensation and transcoding.

IC Role / Device Role / Timing Role: Burst-access memory co-located with DSP cores, using echo clocks (CQ/CQ) to align frame reads with processing deadlines.

Use Value: Four-word burst reduces address decode logic complexity and power vs. discrete SDRAM - improves real-time determinism.

Baseband Processing MemoryTest Equipment Pattern Generator

Use Scenario: Serving as channel estimation and equalization coefficient store in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfaced directly to FPGA-based FFT engines, leveraging BWS[3:0] for dynamic coefficient updates.

Use Value: Byte-write select allows selective update of 9-bit sub-coefficients without disturbing adjacent values - preserves algorithmic integrity.

Use Scenario: Generating high-fidelity digital stimulus waveforms in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: Pattern storage element clocked at 400 MHz, with QVLD signaling exact data-valid timing to sequencer logic.

Use Value: QVLD eliminates setup/hold uncertainty in waveform edge placement - achieves <100 ps timing resolution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C36256P-15JINAsynchronous 256K × 36 SRAM; no DDR, no echo clocks, no PLL; 15 ns access timeUsed in non-pipelined control-plane buffers where latency >5 ns is acceptableSelect only if system clock ≤100 MHz and burst depth flexibility is not required
MT47H64M16HR-37EDDR2 SDRAM; 64M × 16; requires refresh, command/address bus, and complex controllerDeployed in cost-sensitive, lower-bandwidth applications with software-managed memory hierarchyChoose only when >512 MB density needed and deterministic latency is secondary to cost per bit

Compared with AS7C36256P-15JIN and MT47H64M16HR-37E, CY7C1145KV18-400BZXCT delivers guaranteed 2-cycle latency, concurrent read/write at 400 MHz, and hardware-synchronized data capture - essential for deterministic real-time systems where jitter or arbitration stalls are unacceptable.

Availability

CY7C1145KV18-400BZXCT is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card data caches, baseband processing memory, and test equipment pattern generators requiring stable component supply and long-term industrial availability.

Supply support for CY7C1145KV18-400BZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

This device belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in packet-switched infrastructure - prioritizing concurrent access, echo-clock synchronization, and system-level timing closure over raw density or cost-per-bit.

FAQ

What is the function of the DOFF pin on CY7C1145KV18-400BZXCT?

The DOFF (PLL Disable) pin controls the internal phase-locked loop: when pulled HIGH, the PLL is active and enables 2.0-cycle read latency at up to 400 MHz; when pulled LOW, the PLL is bypassed and the device operates in QDR I mode with 1.0-cycle latency but limited to ≤167 MHz. This pin must be externally biased - floating is not allowed.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin calibrates the output driver impedance of Q[35:0], CQ, and CQ pins to match the PCB's characteristic impedance (typically 50 Ω). A 50 Ω resistor between ZQ and ground sets output impedance to 10 Ω (0.2 × 50 Ω); connecting ZQ to VDDQ enables minimum impedance mode. Incorrect ZQ termination causes signal reflections and eye closure at 900 MT/s.

Can CY7C1145KV18-400BZXCT perform partial writes without corrupting adjacent data?

Yes - the four independent byte write select signals (BWS[3:0]) allow masking of any 9-bit subset of the 36-bit data bus during write operations. For example, asserting only BWS[0] writes D[8:0] while preserving D[35:9] unchanged. This is implemented in hardware and requires no additional control logic or timing overhead.

What timing relationship exists between QVLD and the echo clocks CQ/CQ?

QVLD is edge-aligned with both CQ and CQ outputs: it asserts coincident with the rising edge of CQ that corresponds to the first valid word of a four-word read burst. This alignment eliminates the need for external delay tuning and guarantees that Q[35:0] data is valid within ±50 ps of the QVLD assertion edge - critical for reliable capture in FPGA-based receivers.

CY7C1145KV18-400BZXCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1145KV18-400BZXCT FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1145KV18-400BZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1145KV18-400BZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1145KV18-400BZXCT is usually 5 days.

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CY7C1145KV18-400BZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1145KV18-400BZXCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1145KV18-400BZXCT?

For technical support, including CY7C1145KV18-400BZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1145KV18-400BZXCT requirements.

6.How does Aetrix verify that CY7C1145KV18-400BZXCT is sourced from the original manufacturer or authorized distributors?

All CY7C1145KV18-400BZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1145KV18-400BZXCT meets industry standards.

7.What is the process for return or replacement of CY7C1145KV18-400BZXCT?

All CY7C1145KV18-400BZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1145KV18-400BZXCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1145KV18-400BZXCT part is unused and in its original packaging.

Return procedure for CY7C1145KV18-400BZXCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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