Infineon Technologies CY7C11481KV18-400BZXC
- Part No.:
- CY7C11481KV18-400BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C11481KV18-400BZXC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,789
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C11481KV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 1M × 18-bit, operating at 400 MHz with 2.0-cycle read latency and 1.8V core / 1.4–1.8V I/O supply. It delivers 900 Mbps data throughput via double-data-rate interface and supports echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking and packet buffering systems.
For engineers reviewing the CY7C11481KV18 datasheet, CY7C11481KV18 pinout, CY7C11481KV18 application, or CY7C11481KV18 equivalent, this device is selected for high-bandwidth burst-access memory subsystems requiring deterministic timing, JTAG-testable DDR SRAMs with HSTL I/O, and stable 1.8V core operation in telecom line cards and FPGA co-processor buffers.
Technical Context
This SRAM implements a synchronous pipelined architecture with dual input clocks (K/K) driving address latching, write data registration, and read data output on rising edges only. Its DDR II+ mode enables 2-word burst transfers per address cycle, reducing address bus frequency while maintaining full bandwidth.
The device integrates a PLL for accurate data placement, echo clocks (CQ/CQ) aligned to output data edges, and a QVLD signal indicating valid data windows. It supports programmable impedance via ZQ and operates with DOFF pin controlling read latency mode (2.0 cycles HIGH, 1.0 cycle LOW).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 18 Mbit (1M × 18-bit), enabling compact wide-data-path buffering without external depth expansion |
| Max Clock Frequency | 400 MHz - sets maximum sustained burst transfer rate of 800 MT/s (DDR) |
| Read Latency | 2.0 clock cycles (DOFF = HIGH) - guarantees deterministic timing for pipeline-synchronized controllers |
| Core / I/O Supply | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage system integration and HSTL-15/18 compatibility |
| I/O Standard | HSTL Class I inputs, variable-drive HSTL outputs - ensures signal integrity at 900 Mbps with controlled slew and termination |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and electrical performance suitable for high-density PCB layouts |
| JTAG Support | IEEE 1149.1 compliant TAP - enables boundary scan testing and production-level fault coverage |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data | 18-bit DDR data bus; sampled on K/K rising edges during writes, driven on K/K rising edges during reads |
| K / K | Dual differential clock inputs | Non-inverted/inverted clocks - define all synchronous timing; used for address latch, data register, and output register control |
| CQ / CQ | Output echo clocks | Phase-aligned copies of K/K outputs - simplify system-level data capture without routing skew compensation |
| QVLD | Data validity indicator | Active-HIGH pulse synchronized to valid DQ[17:0] windows - eliminates need for fixed delay-based sampling logic |
| DOFF | Latency mode select | Asserted HIGH → 2.0-cycle read latency; asserted LOW → 1.0-cycle latency (DDR I–compatible mode) |
| BWS[1:0] | Byte write select | Two active-LOW signals controlling 9-bit byte segments (BWS0: DQ[8:0], BWS1: DQ[17:9]) - enables partial writes without read-modify-write |
| LD | Load strobe | Synchronous address/load enable - defines start of burst transaction; must meet setup/hold relative to K edge |
| R/W | Read/write direction | Sampled with LD - HIGH = read, LOW = write; determines internal path selection for burst access |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor - enables on-die termination calibration for HSTL output drive strength matching |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address generation logic |
| PLL-based data placement | Ensures sub-cycle alignment between CQ and DQ edges - eliminates board-level timing closure challenges in >400 MHz systems |
| QVLD-driven data capture | Removes dependency on fixed clock-to-output delays - allows FPGA or ASIC receivers to sample only during guaranteed-valid windows |
| Programmable I/O voltage (VDDQ) | Supports 1.4 V (HSTL-15) and 1.8 V (HSTL-18) operation - enables interoperability with multiple generations of FPGAs and ASICs |
| JTAG 1149.1 test port | Enables production ICT, boundary scan diagnostics, and in-system programming verification - reduces test development time and cost |
Applications
| Telecom Line Card Buffering | FPGA Co-Processor Memory |
|---|---|
|
Use Scenario: Storing packet headers and metadata in 10G/40G Ethernet line cards with strict latency budgets. IC Role / Device Role / Timing Role: High-throughput, low-latency burst-access buffer interfacing directly to SerDes MAC logic. Use Value: 2.0-cycle deterministic latency and echo clocks eliminate inter-chip skew compensation, reducing FPGA logic overhead by ~12%. |
Use Scenario: Providing shared scratchpad memory between dual-core ARM Cortex-A9 processors and FPGA-accelerated datapath engines. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM acting as zero-wait-state local memory for real-time DSP kernels. Use Value: 1M × 18-bit organization matches common FPGA data widths, avoiding bit-width conversion logic and saving 3–5 ns of routing delay. |
| Network Packet Switching | High-Speed Test Equipment |
|
Use Scenario: Buffering ingress/egress packets in multi-port L2/L3 switches with deep queuing requirements. IC Role / Device Role / Timing Role: DDR II+ SRAM serving as per-port queue memory with burst-aligned read/write operations. Use Value: QVLD signal enables reliable capture of 900 Mbps data streams across temperature range (−40°C to +85°C) without margin tuning. |
Use Scenario: Capturing high-fidelity waveform samples in automated test equipment with >500 MS/s sampling rates. IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to precision clock generators and trigger logic. Use Value: Dual K/K clock domain and HSTL I/O ensure <15 ps jitter accumulation over 10k-cycle bursts - critical for ENOB preservation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C11501KV18 | 512K × 36-bit organization, same 400 MHz speed and DDR II+ architecture | Optimized for 36-bit datapaths (e.g., PCI Express Gen2 endpoints); requires different address/data routing | Select when system bus width matches 36-bit and density requirement is ≤9 Mbit |
| AS7C3256A-15JCIN | 256K × 16-bit, 15 ns async access, 3.3 V only, no DDR or echo clocks | Legacy parallel SRAM interface; lacks burst, DDR, or QVLD - unsuitable for >200 MHz systems | Consider only for cost-sensitive, low-speed control-plane memory where timing determinism is not required |
Compared with CY7C11481KV18, CY7C11501KV18 offers higher data width but lower density, while AS7C3256A-15JCIN lacks DDR timing, echo clocks, and QVLD - making it incompatible with high-speed burst-oriented designs requiring sub-ns timing control.
Availability
CY7C11481KV18 is available at Aetrix Electronics and suitable for telecom infrastructure, FPGA-based embedded accelerators, and high-speed test instrumentation requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for CY7C11481KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C11481KV18 belongs to the DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-processing and FPGA-adjacent memory subsystems.
FAQ
What is the function of the DOFF pin on CY7C11481KV18?
The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, the device operates with 2.0-cycle read latency (DDR II+ mode); when LOW, it reverts to 1.0-cycle latency (DDR I–compatible mode). This allows system designers to trade off latency for timing margin or legacy compatibility without changing hardware layout.
Can CY7C11481KV18 operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, it meets HSTL Class I specifications with adjusted drive strength and AC timing parameters as defined in the datasheet's DC/AC Electrical Characteristics tables. No configuration register setting is required.
How does the QVLD signal improve system timing margin?
QVLD pulses HIGH only during valid DQ[17:0] windows, synchronized precisely to data edges. This eliminates reliance on fixed clock-to-output delays and allows receivers to gate sampling logic dynamically - improving setup/hold margin by up to 180 ps across voltage and temperature variations.
Is the 165-ball FBGA package lead-free?
Yes - CY7C11481KV18 is offered in both Pb-free (RoHS-compliant) and non-Pb-free versions. The "ZXC" suffix in the part number indicates the Pb-free, halogen-free, and green-compliant variant with NiPdAu finish and standard reflow profile compatibility.
CY7C11481KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C11481KV18-400BZXC FAQ
1.How can I place an order for CY7C11481KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C11481KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C11481KV18-400BZXC reliable?
The price and inventory of CY7C11481KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C11481KV18-400BZXC is usually 5 days.
3.What payment methods are accepted for CY7C11481KV18-400BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C11481KV18-400BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C11481KV18-400BZXC?
CY7C11481KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C11481KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C11481KV18-400BZXC?
For technical support, including CY7C11481KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C11481KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C11481KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C11481KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C11481KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C11481KV18-400BZXC?
All CY7C11481KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C11481KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C11481KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C11481KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C11481KV18-400BZXC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

