Infineon Technologies CY7C1148KV18-400BZC
- Part No.:
- CY7C1148KV18-400BZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1148KV18-400BZC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1148KV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.0-cycle read latency, and 400 MHz clock operation. It features HSTL I/O, dual echo clocks (CQ/CQ), QVLD data-valid indicator, and PLL-based timing alignment for high-speed memory subsystems in networking and telecom line cards.
For engineers reviewing the CY7C1148KV18 datasheet, CY7C1148KV18 pinout, CY7C1148KV18 application, or CY7C1148KV18 equivalent, key selection criteria include DDR II+ burst timing compliance, 1.8 V core / 1.4–1.8 V I/O supply flexibility, FBGA-165 package compatibility, and DOFF-pin configurable latency mode (DDR I vs. DDR II+).
Technical Context
This SRAM implements a synchronous pipelined architecture where address and control signals are registered on K rising edges, while data transfers occur on both K and K rising edges-enabling true double-data-rate operation at 900 MT/s effective bandwidth. The internal 512K × 18 dual-array organization supports concurrent access to adjacent words within a burst.
The device integrates a phase-locked loop (PLL) for precise output data placement relative to echo clocks CQ/CQ, and uses ZQ calibration to match output impedance to system bus termination. DOFF pin selection determines whether the device operates in DDR II+ mode (2-cycle latency, up to 400 MHz) or legacy DDR I mode (1-cycle latency, ≤167 MHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 18 Mbit (1M × 18), enabling compact high-bandwidth buffer storage without depth expansion |
| Max Clock Frequency | 400 MHz - defines maximum sustained transaction rate for burst-aligned memory access |
| Read Latency | 2.0 clock cycles when DOFF = HIGH - ensures deterministic timing margin for FPGA/ASIC controller synchronization |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V logic families |
| Core Supply | VDD = 1.8 V ± 0.1 V - mandates tight regulation for stable SRAM cell operation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides high I/O count with controlled impedance routing and thermal performance |
| Data Interface | DDR II+ with echo clocks CQ/CQ - eliminates board-level skew compensation by aligning data valid window to echo clock edges |
Pinout & Package
Available in 165-ball Fine-Pitch Ball Grid Array (FBGA) package, 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant with Pb-free option.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Shares physical pins for read/write; sampled on K/K rising edges; tri-stated automatically after deselect |
| K / K | Differential input clocks | K captures address/control; both K and K register write data and drive read data - enables true DDR timing |
| CQ / CQ | Output echo clocks | Free-running, PLL-synchronized copies of K/K used by controller to latch DQ data without routing delay matching |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to signal when DQ[17:0] contains valid burst word - replaces complex timing margin analysis |
| DOFF | PLL enable/disable control | LOW disables PLL and forces DDR I mode (1-cycle latency); HIGH enables DDR II+ mode (2-cycle latency, 400 MHz) |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to tune CQ/CQ/DQ output drive strength to 0.2 × RQ - ensures signal integrity across PCB traces |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word access - lowers EMI and simplifies controller address generation |
| Programmable read latency via DOFF | Enables field-selectable operation between DDR II+ (2-cycle, 400 MHz) and DDR I (1-cycle, ≤167 MHz) - supports legacy system upgrades |
| HSTL-compatible I/O with variable drive | Meets JEDEC HSTL Class I specifications and allows impedance tuning via ZQ - ensures clean signal transitions at 900 MT/s |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system diagnostics without requiring additional test pads - reduces manufacturing test cost |
| Synchronous self-timed writes | Eliminates need for external write pulse timing control - simplifies controller logic and improves write reliability across voltage/temperature |
Applications
| Telecom Line Card Buffers | High-Speed Packet Switching |
|---|---|
Use Scenario: Buffering packet headers and metadata in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM providing synchronized burst reads for header parsing engines. Use Value: 400 MHz clock + 2-cycle latency delivers 720 MB/s sustained throughput with deterministic timing for ASIC-based header inspection. | Use Scenario: Storing forwarding tables and queue descriptors in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: Dual-port-equivalent burst SRAM acting as lookup table cache with echo-clock-aligned data capture. Use Value: CQ/CQ echo clocks eliminate interconnect skew, enabling reliable 900 MT/s data capture without custom PCB length matching. |
| Baseband Processing in Wireless Infrastructure | Test Equipment Memory Subsystem |
Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly to FPGA fabric with minimal timing closure effort. Use Value: ZQ-calibrated outputs and 1.4–1.8 V I/O range ensure robust operation across varying FPGA I/O standards and voltage rails. | Use Scenario: Waveform memory and pattern storage in high-speed digital logic analyzers and ATE systems. IC Role / Device Role / Timing Role: Deterministic-latency memory supporting precise timestamping and deep trace capture. Use Value: QVLD pin provides unambiguous data validity indication aligned to echo clocks - removes ambiguity in high-speed sampling windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-15JCIN | Asynchronous 256K × 16 SRAM; no DDR interface, no echo clocks, 15 ns access time | Used in non-burst, lower-bandwidth control-plane buffers where timing determinism is less critical | Select only if system lacks DDR clock infrastructure and tolerates higher latency and lower throughput |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM with single-data-rate (SDR) interface; 10 ns cycle time; no PLL or echo clocks | Deployed in legacy FPGA designs with limited pin count and no DDR timing resources | Choose when echo clock routing complexity must be avoided and 450 MB/s peak bandwidth suffices |
Compared with AS7C3256B-15JCIN and IS61WV102418BLL-10BLI, CY7C1148KV18 delivers 2× bandwidth via DDR II+, deterministic latency via PLL, and simplified data capture via CQ/CQ - making it optimal for new high-speed serial interface designs where timing margin is constrained.
Availability
CY7C1148KV18 is available at Aetrix Electronics and suitable for telecom line cards, packet switching hardware, wireless baseband processing, and automated test equipment requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1148KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.
CY7C1148KV18 belongs to the QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-throughput memory interfaces in FPGA- and ASIC-based communications infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1148KV18?
The DOFF pin controls the internal PLL: when asserted HIGH, the device operates in DDR II+ mode with 2.0-cycle read latency and supports up to 400 MHz clock frequency; when pulled LOW, the PLL is disabled and the device reverts to DDR I mode with 1-cycle latency and maximum 167 MHz operation. This allows hardware-selectable performance modes without firmware changes.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of DQ, CQ, and CQ pins to 0.2 × RQ (e.g., 48 Ω). This ensures consistent signal rise/fall times and minimizes reflections on high-speed PCB traces. Leaving ZQ unconnected or tying it to GND violates specification and may cause signal integrity failure.
Can CY7C1148KV18 be used without connecting the CQ and CQ pins?
No - CQ and CQ are mandatory for correct data capture. These echo clocks are phase-aligned to K/K and provide the timing reference for latching DQ[17:0] data in the controller. Omitting them forces reliance on board-level trace matching, which is impractical above 200 MHz and violates the DDR II+ interface specification.
What is the role of the QVLD signal during read operations?
QVLD is a synchronous output that asserts HIGH edge-aligned with CQ/CQ to indicate when DQ[17:0] carries valid data from the current burst word. It eliminates the need for fixed delay-based sampling windows and allows controllers to dynamically gate data capture - critical for maintaining timing margin across voltage, temperature, and process variation.
CY7C1148KV18-400BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1148KV18-400BZC FAQ
1.How can I place an order for CY7C1148KV18-400BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1148KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of CY7C1148KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1148KV18-400BZC is usually 5 days.
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6.How does Aetrix verify that CY7C1148KV18-400BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1148KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1148KV18-400BZC meets industry standards.
7.What is the process for return or replacement of CY7C1148KV18-400BZC?
All CY7C1148KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1148KV18-400BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1148KV18-400BZC part is unused and in its original packaging.
Return procedure for CY7C1148KV18-400BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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