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Infineon Technologies CY7C1148KV18-400BZXC

Part No.:
CY7C1148KV18-400BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1148KV18-400BZXC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:122

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Product details

Overview

CY7C1148KV18-400BZXC from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.0-cycle read latency, and 400 MHz clock operation. It delivers 900 Mbps data throughput via double-data-rate I/O, uses HSTL-compatible 1.4 V to 1.8 V I/O supply (VDDQ), and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in memory subsystems of network switches and baseband processors.

For engineers reviewing the CY7C1148KV18-400BZXC datasheet, CY7C1148KV18-400BZXC pinout, CY7C1148KV18-400BZXC application, or CY7C1148KV18-400BZXC equivalent, key selection criteria include its 400 MHz K/K clock support, 2.0-cycle latency mode (DOFF = HIGH), synchronous self-timed writes, 165-ball FBGA package, and JTAG 1149.1 test access capability.

Technical Context

This SRAM implements a synchronous pipelined architecture where address and control inputs (A, R/W, LD, BWS) are registered on the rising edge of K only, while write data is latched on both K and K rising edges. Read data is driven synchronously on both K and K rising edges, enabling true DDR operation at 400 MHz with 900 Mbps bandwidth.

The device embeds a PLL for accurate data placement and supports dual latency modes: 2.0-cycle latency (DOFF = HIGH) for DDR II+ timing compliance, and 1-cycle latency (DOFF = LOW) for backward compatibility with DDR I systems up to 167 MHz. Echo clocks CQ/CQ are free-running and phase-aligned to K/K, eliminating system-level skew compensation.

Key Specifications

ParameterValue and Actual Design Meaning
Density18 Mbit (1M × 18 configuration)
Max Clock Frequency400 MHz - defines maximum sustained burst transaction rate
Read Latency2.0 clock cycles - determines minimum time between address load and first valid output word
Data Rate900 Mbps - achieved via DDR interface transferring data on both K and K rising edges
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports mixed-voltage system interfacing and impedance tuning via ZQ
Package165-ball FBGA (13 × 15 × 1.4 mm) - enables high-density PCB layout with controlled signal integrity
Core SupplyVDD = 1.8 V ± 0.1 V - powers internal SRAM array and logic; separate from I/O domain

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/TerminalCircuit RoleDesign Meaning
DQ[17:0]Synchronous bidirectional data busShares physical pins for input (write) and output (read); data sampled on K/K rising edges; tri-stated automatically after deselection
K / KDifferential input clocksK (positive) and K (negative) define all synchronous timing; rising edges latch inputs and drive outputs; no internal inversion
CQ / CQOutput echo clocksFree-running, phase-aligned copies of K/K used by system logic to capture DQ data without routing clock skew
QVLDValid data indicatorAsserted edge-aligned with CQ/CQ to signal when DQ[17:0] carries valid read data - eliminates need for fixed delay assumptions
DOFFPLL enable/disable controlActive-low pin that selects DDR II+ (DOFF = HIGH, 2-cycle latency) or DDR I mode (DOFF = LOW, 1-cycle latency, ≤167 MHz)
ZQImpedance calibration referenceConnects to external resistor to ground to tune CQ/CQ/DQ output driver impedance to 0.2 × RQ; ensures signal integrity on high-speed buses

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling frequency by 50% versus single-word access - lowers EMI and simplifies controller design
Synchronous self-timed writesEliminates external write pulse timing constraints - internal logic guarantees correct write completion independent of clock jitter
HSTL I/O with variable drive strengthEnsures signal integrity at 400 MHz; drive strength calibrated via ZQ pin to match PCB trace impedance
JTAG 1149.1 boundary scanEnables in-system testability and debug of interconnects without requiring dedicated test pads or fixtures
Programmable latency modeSingle-pin DOFF selection between 2-cycle (DDR II+) and 1-cycle (DDR I) operation - supports legacy and next-gen controller migration

Applications

Network Packet BufferingBaseband Signal Processing

Use Scenario: High-throughput packet buffering in Layer 3 switches and routers handling 10 GbE line rates.

IC Role / Device Role / Timing Role: Primary burst-access SRAM for temporary storage of ingress/egress packet headers and metadata.

Use Value: 900 Mbps DDR bandwidth and 2.0-cycle latency enable deterministic 64-byte packet reads/writes within ≤16 ns, meeting strict forwarding pipeline deadlines.

Use Scenario: Real-time frame buffering in LTE/5G baseband processors during FFT/IFFT and channel estimation.

IC Role / Device Role / Timing Role: Low-latency, burst-capable memory for intermediate results in multi-stage digital signal processing pipelines.

Use Value: Synchronous self-timed writes and echo-clock–aligned QVLD eliminate setup/hold violations across 400 MHz clock domains, ensuring bit-accurate data handoff.

Depth-Expanded Memory SubsystemHigh-Speed Test Equipment Memory

Use Scenario: Building >72-bit wide memory banks using multiple CY7C1148KV18 devices in parallel depth expansion.

IC Role / Device Role / Timing Role: Identical-configured SRAM bank member with synchronized K/K and CQ/CQ across all units.

Use Value: Automatic output tri-state on deselect allows seamless interleaving between devices without wait states or external bus arbitration logic.

Use Scenario: Pattern memory in automated test equipment (ATE) requiring fast, deterministic read/write turnaround for vector generation.

IC Role / Device Role / Timing Role: Deterministic-latency memory for storing stimulus/response vectors accessed in tight loop sequences.

Use Value: Fixed 2.0-cycle read latency and JTAG boundary scan support simplify timing closure and fault isolation during production test program development.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256B-15JCINAsynchronous 256K × 16 SRAM; no DDR, no echo clocks, 15 ns access timeUsed in legacy controllers lacking DDR timing control; lower bandwidth, higher latencySelect only if system lacks K/K clock generation or requires simple address/data bus interface
IS61WV102418BLL-10BLISynchronous 1M × 18 SRAM with single-data-rate (SDR) interface; 10 ns access, no burst or echo clocksSuitable for cost-sensitive industrial controllers where 400 MHz DDR is unnecessaryChoose when bandwidth demand is ≤200 MB/s and board space permits larger SOJ package vs. FBGA

Compared with AS7C3256B-15JCIN and IS61WV102418BLL-10BLI, CY7C1148KV18-400BZXC delivers 4.5× higher effective bandwidth and deterministic burst timing critical for packet-forwarding and DSP pipelines - but requires DDR-aware controller design and FBGA assembly capability.

Availability

CY7C1148KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and depth-expanded memory subsystems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1148KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

CY7C1148KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfaces in packet-processing and real-time signal-path applications - not general-purpose storage.

FAQ

What is the function of the DOFF pin on CY7C1148KV18-400BZXC?

The DOFF (DLL/PLL Off) pin is an active-low control that disables the internal PLL. When pulled LOW, the device operates in DDR I mode with 1-cycle read latency and maximum clock frequency of 167 MHz. When held HIGH (typically via 10 kΩ pull-up), it enables DDR II+ mode with 2.0-cycle latency and full 400 MHz operation. This pin directly controls latency mode and clock domain behavior - no external configuration register is involved.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die termination calibration. This adjusts the output driver impedance of DQ, CQ, and CQ signals to exactly 0.2 × RQ (e.g., 48 Ω), matching standard PCB trace impedances. Proper ZQ calibration reduces reflections, improves eye diagram margins, and eliminates the need for discrete series termination resistors on every data line.

Can CY7C1148KV18-400BZXC be used without the echo clocks CQ and CQ?

Yes - CQ and CQ are optional for system timing. The device drives valid data aligned to K and K rising edges regardless. However, omitting echo clocks requires the system controller to manage clock-to-data skew manually, increasing timing margin risk above 200 MHz. For 400 MHz operation, Cypress strongly recommends using CQ/CQ with QVLD to guarantee setup/hold compliance without complex PCB length matching.

What is the role of the LD (Load) signal in burst operation?

The LD (Load) signal is a synchronous control input sampled on the rising edge of K. It initiates each burst transaction: when LD goes LOW with R/W set, the current address is latched and a two-word burst begins. LD must remain stable for one full K cycle before and after the triggering edge. Unlike asynchronous CE, LD defines the exact clock boundary for address capture and burst start - making it essential for pipelined controller synchronization.

CY7C1148KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1148KV18-400BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1148KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1148KV18-400BZXC reliable?

The price and inventory of CY7C1148KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1148KV18-400BZXC is usually 5 days.

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Once your CY7C1148KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1148KV18-400BZXC?

For technical support, including CY7C1148KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1148KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C1148KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1148KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1148KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1148KV18-400BZXC?

All CY7C1148KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1148KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1148KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1148KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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