Infineon Technologies CY7C1150KV18-400BZC

Overview

CY7C1150KV18-400BZC from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 512K × 36, operating at 400 MHz with 2.0-cycle read latency, HSTL I/O, and dual echo clocks (CQ/CQ) for precise high-speed data capture in burst-mode memory subsystems.

For engineers reviewing the CY7C1150KV18-400BZC datasheet, CY7C1150KV18-400BZC pinout, CY7C1150KV18-400BZC application, or CY7C1150KV18-400BZC equivalent, key selection criteria include its 400 MHz clock frequency, 36-bit DDR interface, 165-ball FBGA package, DOFF-controlled PLL mode switching, and QVLD-synchronized output validity indication.

Technical Context

This device implements a synchronous pipelined architecture with two-word burst reads/writes initiated on K rising edges, where address latching occurs on alternating K/K edges and data transfers occur on both K and K rising edges. It integrates a PLL for accurate data placement and supports both DDR II+ (2-cycle latency, DOFF = HIGH) and DDR I-compatible (1-cycle latency, DOFF = LOW) operation modes.

The SRAM uses HSTL input buffers and variable-drive HSTL output buffers, with VDD = 1.8 V ± 0.1 V and VDDQ configurable from 1.4 V to 1.8 V. Echo clocks CQ/CQ are free-running and phase-aligned to K/K, enabling source-synchronous data capture without external delay compensation.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with AS7C362000B-400BIN and IS61WV102436BLL-400BLI, CY7C1150KV18-400BZC delivers higher effective bandwidth through true DDR operation, eliminates external echo clock generation via integrated PLL and CQ/CQ, and guarantees data validity with QVLD - reducing timing margin risk in high-reliability industrial and telecom designs.

Availability

CY7C1150KV18-400BZC is available at Aetrix Electronics and suitable for FPGA memory interfaces, network packet buffers, test equipment waveform storage, and industrial motion controller buffers requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1150KV18-400BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1150KV18 belongs to the QDR II+ SRAM product line, engineered specifically for low-latency, high-bandwidth memory interfacing in FPGA-based systems, network infrastructure, and real-time control applications demanding deterministic DDR timing.

FAQ

What is the function of the DOFF pin, and how does it affect timing behavior?

The DOFF pin is an active-low PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and a maximum clock frequency of 167 MHz. When HIGH, the PLL is enabled and the device operates in DDR II+ mode with 2-cycle latency and up to 400 MHz operation. This dual-mode capability allows hardware-level compatibility testing and fallback operation without firmware changes.

How does the ZQ pin enable impedance matching, and what external component is required?

The ZQ pin connects to an external precision resistor (typically 240 Ω) tied to ground, enabling on-die calibration of output driver impedance for DQ, CQ, and CQ pins. The device sets output impedance to 0.2 × RQ, resulting in 48 Ω drive strength when RQ = 240 Ω. This eliminates the need for external series termination resistors and compensates for process/voltage/temperature variations, maintaining signal integrity across the full operating range.

Can CY7C1150KV18-400BZC be used in depth-expanded memory configurations, and how is bus contention avoided?

Yes, the device supports depth expansion via LD and R/W control. During deselection, internal circuitry automatically tri-states DQ[35:0] on the next K rising edge after read completion, enabling seamless handoff between stacked devices without wait states. This behavior, combined with QVLD synchronization, ensures clean bus transitions and eliminates metastability risks in multi-chip memory banks.

What is the significance of the QVLD signal, and how does it differ from conventional RDY or VALID signals?

QVLD is edge-aligned to the rising edges of both CQ and CQ echo clocks, directly indicating when DQ[35:0] data is valid relative to the source-synchronous timing reference. Unlike generic RDY signals, QVLD provides sub-cycle timing precision (<0.45 ns setup/hold margin) and eliminates the need for receiver-side delay tuning. It is mandatory for reliable capture in FPGA I/O blocks configured for DDR input with dynamic phase alignment.