Infineon Technologies CY7C1150KV18-400BZXC

Overview

CY7C1150KV18-400BZXC from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.0-cycle read latency at 400 MHz, HSTL I/O interfaces, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and telecom line cards requiring deterministic low-latency access.

For engineers reviewing the CY7C1150KV18-400BZXC datasheet, CY7C1150KV18-400BZXC pinout, CY7C1150KV18-400BZXC application, or CY7C1150KV18-400BZXC equivalent, this page delivers verified timing behavior, echo clock synchronization logic, byte-write select mapping for 36-bit DQ bus, and functional distinctions between DDR II+ (DOFF = HIGH) and DDR I (DOFF = LOW) modes.

Technical Context

The device implements a synchronous pipelined architecture where all address, control, and data transfers are edge-aligned to dual input clocks K and K̄. Read and write operations initiate on the rising edge of K, with data sampled on both K and K̄ edges-enabling true double-data-rate throughput at 800 MT/s (400 MHz clock × 2).

Its internal organization comprises two 256K × 36 arrays, supporting burst-2 sequential reads/writes per address load. The PLL synchronizes echo clocks CQ/CQ̄ to K, eliminating system-level skew compensation, while QVLD provides edge-aligned validity indication synchronized to CQ/CQ̄-critical for reliable capture in multi-SRAM parallel interfaces.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72T36150L10BG and IS61WV102436BLL-15BLI, CY7C1150KV18-400BZXC uniquely delivers 400 MHz DDR II+ operation with echo-clock–based data capture, making it irreplaceable in systems demanding sub-nanosecond timing alignment across multi-chip memory interfaces.

Availability

CY7C1150KV18-400BZXC is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, baseband processing units, and radar signal processors requiring stable component supply, long-lifecycle support, and guaranteed Pb-free FBGA availability.

Supply support for CY7C1150KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and timing precision.

This device belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched and real-time signal-processing systems where clock-to-data alignment is non-negotiable.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW. In this state, the device reverts to DDR I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). When DOFF is HIGH, DDR II+ mode activates with 2-cycle latency and full 400 MHz capability. This pin enables hardware-selectable performance modes without firmware change.

How are the BWS[3:0] signals used for byte-level writes?

BWS[3:0] are active-Low byte write selects controlling four 9-bit lanes: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. All four are sampled synchronously on K/K̄ rising edges during write cycles. Asserting only BWS0 and BWS2, for example, writes to lanes 0 and 2 while preserving data in lanes 1 and 3 - eliminating need for read-modify-write sequences.

Why are CQ and CQ̄ required, and how do they differ from K and K̄?

CQ and CQ̄ are output echo clocks, not inputs. They are free-running, PLL-synchronized copies of K and K̄, routed alongside DQ[35:0] to the memory controller. Unlike K/K̄, which originate externally, CQ/CQ̄ experience identical PCB trace delays as DQ signals - enabling source-synchronous capture with zero skew margin allocation in FPGA I/O registers.

Can CY7C1150KV18-400BZXC operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly supports VDDQ = 1.4 V to VDD (1.8 V), including 1.5 V. This allows direct interfacing with 1.5 V memory controllers while maintaining 1.8 V core logic voltage for optimal speed/power trade-off. Decoupling capacitors must be placed separately for VDD and VDDQ rails to prevent coupling-induced jitter.