Infineon Technologies CY7C1168KV18-400BZXC

Overview

CY7C1168KV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous pipelined DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 400 MHz, HSTL I/O interface, and 165-ball FBGA package. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking packet buffers and baseband memory subsystems.

For engineers reviewing the CY7C1168KV18 datasheet, CY7C1168KV18 pinout, CY7C1168KV18 application, or CY7C1168KV18 equivalent, key selection criteria include DDR II+ timing compliance, 2.5-cycle vs. 1-cycle latency mode via DOFF control, HSTL drive strength matching, echo clock alignment tolerance, and JTAG 1149.1 test access capability for production validation.

Technical Context

This SRAM implements a synchronous, pipelined DDR II+ interface with dual input clocks (K/K) - all synchronous inputs latched on K rising edges, write data registered on both K and K rising edges, and read data driven on both K and K rising edges. The device uses internal self-timed write circuitry and supports depth expansion without wait states via automatic output tri-state after K edge upon deselect.

The integrated PLL enables accurate data placement at 400 MHz operation; when DOFF is HIGH, it operates in DDR II+ mode (2.5-cycle latency); when DOFF is LOW, it reverts to DDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ are free-running and synchronized to K, eliminating per-device data capture skew in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C1167KV18 and AS7C3256B-15JIN, the CY7C1168KV18 uniquely delivers 400 MHz DDR II+ operation with programmable latency, echo clocks, and QVLD - enabling higher bandwidth, lower system-level timing uncertainty, and simplified PCB layout in real-time data-path applications.

Availability

CY7C1168KV18 is available at Aetrix Electronics and suitable for packet buffer memory, baseband processor cache, and depth-expanded memory subsystems requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free sourcing.

Supply support for CY7C1168KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1168KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, designed specifically for deterministic, high-bandwidth data-path buffering in networking infrastructure, wireless base stations, and test equipment where burst access, low latency, and timing repeatability are critical.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-LOW PLL disable control. When asserted HIGH, the internal PLL enables DDR II+ mode with 2.5-cycle read latency at up to 400 MHz. When pulled LOW, the device operates in DDR I mode with 1-cycle latency and a maximum frequency of 167 MHz. This dual-mode capability allows hardware reuse across generations and simplifies validation against legacy timing specifications.

How do CQ and CQ echo clocks improve system-level timing margin?

CQ and CQ are free-running, K-synchronized output clocks that track the same phase relationship as the internal K/K clocks driving DQ outputs. By using CQ/CQ instead of K/K to sample DQ, external logic avoids skew between clock distribution and data paths. This eliminates board-level deskew components and increases timing margin by up to 120 ps across temperature and voltage variations in multi-SRAM configurations.

Can CY7C1168KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The datasheet explicitly supports VDDQ = 1.4 V to VDD (1.8 V), making 1.5 V operation fully compliant. This allows direct interfacing with 1.5 V memory controllers while maintaining 1.8 V core stability. The ZQ pin must be connected to a resistor to ground (not VDDQ) to calibrate output drive strength correctly for 1.5 V signaling.

Is JTAG boundary scan supported, and what standards does it comply with?

Yes, CY7C1168KV18 includes a fully compliant IEEE 1149.1 JTAG test access port. It supports TAP reset, instruction register loading, boundary scan register access, and identification register readback. All scan cells and instruction decoding meet the IEEE 1149.1-2013 standard, enabling production ICT, solder joint verification, and in-system programming without additional test fixtures.