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Infineon Technologies CY7C1170KV18-400BZC

Part No.:
CY7C1170KV18-400BZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1170KV18-400BZC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,090

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Product details

Overview

CY7C1170KV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 512K × 36, operating at up to 400 MHz (2.5-cycle read latency), with 1.8 V core supply and 1.4–1.8 V I/O supply, HSTL-compatible interfaces, and integrated PLL for precise data placement - deployed in high-bandwidth networking line cards and packet buffering subsystems.

For engineers reviewing the CY7C1170KV18 datasheet, CY7C1170KV18 pinout, CY7C1170KV18 application, or CY7C1170KV18 equivalent, key selection criteria include confirmed 2.5-cycle DDR II+ read latency mode, echo clock (CQ/CQ) timing alignment, QVLD validity signaling, DOFF-controlled PLL enable/disable behavior, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with depth-expansion memory architectures.

Technical Context

The CY7C1170KV18 implements a two-word burst DDR II+ architecture where each read/write access transfers 36-bit data on alternating rising edges of complementary K/K clocks. Address latching occurs on K only; write data is registered on both K and K edges; read data is driven synchronously on both clock edges with echo clocks CQ/CQ edge-aligned to output timing.

It integrates a phase-locked loop (PLL) for accurate internal clock synthesis and data placement, supports programmable output impedance via ZQ calibration, and provides QVLD to indicate valid output data aligned with CQ/CQ. The DOFF pin enables switching between DDR II+ (2.5-cycle latency, up to 400 MHz) and DDR I (1-cycle latency, ≤167 MHz) operation modes.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 18 Mbit / 512K × 36 - supports wide-data-path buffering without external width expansion
Max Clock Frequency 400 MHz - defines maximum sustained burst throughput of 28.8 GB/s (36-bit × 2 × 400 MHz)
Read Latency 2.5 cycles (DOFF = HIGH) - determines minimum read-to-read turnaround and pipeline depth in controller design
Core / I/O Supply VDD = 1.8 V ± 0.1 V; VDDQ = 1.4 V to 1.8 V - enables interoperability with 1.5 V and 1.8 V memory subsystems
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >400 MHz with controlled slew and termination
Package 165-ball FBGA (13 × 15 × 1.4 mm) - matches industry-standard DDR memory footprint for PCB layout reuse
Timing Reference Echo clocks CQ/CQ + QVLD - eliminates need for external strobes and simplifies high-speed data capture in FPGA-based controllers

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path shared for input (write) and output (read); sampled on K/K rising edges; tristated automatically on deselect
K / K Complementary input clocks Rising edges control all synchronous operations; K latches address/control; both K and K register write data and drive read data
CQ / CQ Synchronous echo clocks Free-running, edge-aligned copies of K/K used by system logic to capture DQ[35:0] without skew compensation
QVLD Valid data indicator Asserted high synchronously with CQ/CQ edges to signal that DQ[35:0] contains valid read data - critical for safe latch timing
DOFF PLL disable control Active-low input: HIGH enables DDR II+ mode (2.5-cycle latency); LOW disables PLL and reverts to DDR I timing (1-cycle latency)
ZQ Output impedance calibration reference Connects to external resistor to ground to tune CQ/CQ/DQ output drive strength to match 50 Ω system trace impedance
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) - enables partial writes without read-modify-write
LD Load command strobe Latched on K rising edge to initiate burst transaction; defines address and R/W direction for subsequent 2-word sequence

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs - lowers EMI and simplifies controller address sequencing
Integrated PLL with DOFF control Enables dynamic switching between high-performance DDR II+ (400 MHz, 2.5-cycle latency) and legacy DDR I (≤167 MHz, 1-cycle latency) modes
Edge-aligned echo clocks + QVLD Eliminates need for per-device delay calibration or fly-by routing - allows direct connection to FPGA I/O banks with source-synchronous capture
Programmable output impedance (ZQ) Supports automatic 50 Ω output matching across voltage/temperature/process variation - improves signal integrity without external termination resistors
HSTL Class I interface Guarantees compatible timing margins with industry-standard DDR memory controllers and FPGAs - avoids level-shifter requirements

Applications

Packet Buffering Network Processor Interface

Use Scenario: Line-rate packet buffering in 10G/25G Ethernet switch ASICs requiring low-latency, deterministic access to 36-bit-wide data streams.

IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO with synchronized echo clocks enabling zero-skew data capture in FPGA-based traffic managers.

Use Value: 2.5-cycle latency and QVLD signaling allow controller logic to schedule back-to-back reads without inter-burst gaps - sustaining full 400 MHz bandwidth.

Use Scenario: High-speed interface between multi-core network processors and external memory subsystems in telecom baseband units.

IC Role / Device Role / Timing Role: Width-matched (36-bit) DDR II+ SRAM acting as protocol translation buffer between processor AXI4-Stream and memory-mapped packet queues.

Use Value: HSTL I/O and ZQ calibration ensure reliable operation across -40°C to +85°C industrial temperature range without board-level tuning.

Depth-Expanded Memory Arrays Real-Time Signal Processing

Use Scenario: Building scalable memory capacity using multiple CY7C1170KV18 devices in parallel depth configuration for radar DSP front-ends.

IC Role / Device Role / Timing Role: Synchronized burst SRAM bank where LD and R/W signals are shared across devices and QVLD enables seamless handoff between chips.

Use Value: Automatic output tristating on deselect eliminates need for external bus switches or wait-state insertion during chip-select transitions.

Use Scenario: Low-jitter frame buffering in medical ultrasound beamforming modules requiring sub-nanosecond timing alignment across 36-bit sample paths.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM providing time-aligned sample storage with CQ/CQ echo clocks referenced to master system clock domain.

Use Value: PLL-generated internal clocks reduce jitter accumulation compared to externally sourced DDR clocks - preserving SNR in analog-digital chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3652 36-Mbit (1M × 36), 333 MHz max, LVDS interface, no integrated PLL, no QVLD Requires external clock forwarding and data valid generation; higher power at same frequency due to LVDS drive Select when LVDS ecosystem is already established and lower density suffices; avoid if echo-clock simplification is required
ISSI IS61WV102436B 36-Mbit (1M × 36), 200 MHz async SRAM, no DDR, no burst, no PLL, CMOS I/O Lacks DDR timing, echo clocks, and burst capability - limits bandwidth to ~7.2 GB/s with significant controller overhead Use only in cost-sensitive, non-real-time applications where 400 MHz DDR timing and deterministic latency are not required

Compared with IDT72T3652 and IS61WV102436B, the CY7C1170KV18 delivers 40% higher bandwidth at 400 MHz with built-in timing aids (CQ/CQ, QVLD, ZQ), reducing FPGA logic utilization and PCB routing complexity in high-speed packet processing designs.

Availability

CY7C1170KV18 is available at Aetrix Electronics and suitable for packet buffering, network processor interfacing, depth-expanded memory arrays, and real-time signal processing requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for CY7C1170KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1170KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput buffering in packet-switched infrastructure where echo-clock synchronization and programmable impedance eliminate system-level timing closure challenges.

FAQ

What is the function of the DOFF pin on CY7C1170KV18?

The DOFF pin is an active-low PLL disable control. When pulled HIGH, the internal PLL is enabled, allowing DDR II+ operation at up to 400 MHz with 2.5-cycle read latency. When pulled LOW, the PLL is disabled and the device operates in DDR I mode with 1-cycle latency and maximum frequency reduced to 167 MHz. This dual-mode capability supports backward compatibility and flexible system timing design.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external precision resistor (typically 50 Ω) to ground, enabling on-die calibration of CQ, CQ, and DQ[35:0] output driver impedance. The calibrated value equals 0.2 × RQ, resulting in 10 Ω nominal output resistance - matching standard 50 Ω transmission lines when terminated. This eliminates need for external series resistors and maintains signal integrity across voltage and temperature variations.

Can CY7C1170KV18 be used without the PLL in systems requiring strict jitter control?

Yes - asserting DOFF LOW disables the PLL and reverts the device to DDR I timing, where all operations are referenced directly to the external K/K clocks without internal multiplication. This reduces jitter contribution from PLL circuitry and is appropriate for systems where absolute clock fidelity outweighs bandwidth requirements, though maximum frequency drops to 167 MHz.

What is the role of QVLD in system-level data capture?

QVLD is a synchronous output signal edge-aligned with CQ and CQ that asserts HIGH only when DQ[35:0] carries valid read data. It replaces the need for fixed delay-based sampling windows or complex deskew logic in FPGA receivers, enabling robust, process-voltage-temperature-independent data capture using simple register-based latching on the rising edge of QVLD.

CY7C1170KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1170KV18-400BZC FAQ

1.How can I place an order for CY7C1170KV18-400BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1170KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1170KV18-400BZC reliable?

The price and inventory of CY7C1170KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1170KV18-400BZC is usually 5 days.

3.What payment methods are accepted for CY7C1170KV18-400BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1170KV18-400BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1170KV18-400BZC?

CY7C1170KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1170KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1170KV18-400BZC?

For technical support, including CY7C1170KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1170KV18-400BZC requirements.

6.How does Aetrix verify that CY7C1170KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1170KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1170KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C1170KV18-400BZC?

All CY7C1170KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1170KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1170KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C1170KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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