Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1245KV18-400BZXC

Part No.:
CY7C1245KV18-400BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1245KV18-400BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,681

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1245KV18-400BZXC from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II+ SRAM with 2.0-cycle read latency, 400 MHz clock operation (800 MT/s DDR), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, four-word burst transfers, echo clocks (CQ/CQ), and QVLD data-valid indicator - deployed in high-speed network packet buffers and FPGA co-processor memory interfaces.

For engineers reviewing the CY7C1245KV18-400BZXC datasheet, CY7C1245KV18-400BZXC pinout, CY7C1245KV18-400BZXC application, or CY7C1245KV18-400BZXC equivalent, key selection criteria include 400 MHz sustained DDR bandwidth, HSTL-compatible 165-ball FBGA package, DOFF-configurable QDR I/II+ mode, and JTAG 1149.1 test access for production validation.

Technical Context

This device implements a synchronous pipelined QDR II+ architecture with independent read and write ports sharing a multiplexed 18-bit address bus. All inputs are registered on rising edges of K/K clocks; outputs are edge-aligned to CQ/CQ echo clocks and qualified by QVLD.

The internal PLL enables precise 2.0-cycle read latency when DOFF = HIGH; disabling the PLL via DOFF = LOW reverts operation to QDR I timing (1-cycle latency, ≤167 MHz). Depth expansion uses RPS/WPS and BWS[3:0] signals, supporting 36-bit-wide burst writes with byte-select granularity.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 organization)
Max Clock Frequency 400 MHz - delivers 800 MT/s DDR throughput on both ports
Read Latency 2.0 clock cycles - deterministic timing for pipeline-synchronized systems
Core Supply (VDD) 1.8 V ± 0.1 V - fixed low-voltage core enabling high-speed, low-power operation
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports HSTL Class I/III signaling and mixed-voltage system interfacing
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB routing
Burst Length Four 36-bit words per access - reduces address bus toggling and simplifies controller logic

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Write data input 36-bit synchronous write bus sampled on K/K rising edges; supports byte-write via BWS[3:0]
Q[35:0] Read data output 36-bit DDR output aligned to CQ/CQ; tri-stated when RPS deasserted
RPS / WPS Port select control Active-low synchronous enable for read/write ports; enables depth expansion and port isolation
BWS[3:0] Byte write select Four independent active-low signals controlling 9-bit byte lanes (D[8:0] to D[35:27])
K / K Dual-phase input clocks Rising-edge-triggered clocks for all synchronous operations; K drives read path, K drives write path
CQ / CQ Echo clock outputs Free-running, phase-matched copies of K/K - simplify high-speed data capture without external delay tuning
QVLD Data validity indicator Output pulse edge-aligned to CQ/CQ - unambiguously marks valid Q[35:0] data windows
DOFF PLL disable control Active-low pin that switches device between QDR II+ (2-cycle latency, 400 MHz) and QDR I (1-cycle, ≤167 MHz) modes
ZQ Impedance calibration input Connects to external resistor to ground to tune CQ/CQ/Q[35:0] output drive strength to match 50 Ω system trace impedance

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround overhead and prevents contention in full-duplex memory access
Four-word burst architecture Reduces effective address bus frequency by 4× versus single-word access - lowers controller complexity
HSTL Class I/III I/O buffers Ensures signal integrity at 800 MT/s with programmable drive strength and on-die termination support
JTAG 1149.1 test access port Enables boundary scan testing, silicon validation, and production-level fault coverage without additional test fixtures
Synchronous self-timed writes Internal write sequencing eliminates external write-strobe timing constraints - simplifies FPGA/controller interface

Applications

Network Packet Buffering FPGA Co-Processor Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards with real-time classification and forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory between MAC and traffic manager ASICs using parallel QDR II+ interface.

Use Value: 800 MT/s DDR throughput sustains full line-rate packet buffering without stall cycles; QVLD eliminates setup/hold uncertainty in FPGA capture logic.

Use Scenario: Serving as scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based hardware accelerators performing real-time video analytics.

IC Role / Device Role / Timing Role: Off-chip burst-access memory tightly coupled to FPGA fabric via dedicated read/write data paths and echo-clock–synchronized capture.

Use Value: Four-word burst + 2-cycle latency enables predictable 4-cycle memory transaction completion - critical for pipelined compute kernels.

Telecom Baseband Processing High-Speed Test Equipment

Use Scenario: Interfacing with multi-core DSPs in 5G massive MIMO baseband units requiring concurrent FFT/IFFT buffer access across multiple antenna channels.

IC Role / Device Role / Timing Role: Shared dual-port SRAM acting as channel coefficient store and time-domain sample buffer with deterministic read/write arbitration.

Use Value: Independent RPS/WPS controls allow simultaneous read from one channel and write to another - maximizing spectral efficiency processing throughput.

Use Scenario: Embedded in automated test equipment (ATE) pattern generators where waveform data must be streamed to DACs at >1 GSPS rates with sub-nanosecond timing precision.

IC Role / Device Role / Timing Role: Burst-mode waveform storage element synchronized to system clock tree via K/K and echoed through CQ/CQ for jitter-free DAC triggering.

Use Value: Echo clocks eliminate interconnect skew between memory and DAC sampling clocks - directly improving SFDR and ENOB performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-400BIN 2M × 18 configuration (36 Mbit), same 400 MHz speed, but lacks DOFF-configurable QDR I mode and JTAG support Requires external PLL for echo clock generation; no built-in impedance calibration (ZQ) Select when cost-sensitive designs prioritize pin count over testability and voltage flexibility
IS45S32800J-400BLI 32 Mbit (1M × 32), 400 MHz, but uses QDR II (not II+) architecture - fixed 2-cycle latency, no DOFF mode switch No QVLD signal; CQ/CQ not available - demands tighter board-level timing closure Choose only if legacy QDR II compatibility is mandatory and echo-clock–based capture is handled externally

Compared with AS7C362000B-400BIN and IS45S32800J-400BLI, CY7C1245KV18-400BZXC uniquely combines 36-bit width, DOFF-switchable latency modes, integrated ZQ calibration, and JTAG testability - making it optimal for new high-reliability telecom and test equipment designs requiring design margin and production test coverage.

Availability

CY7C1245KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1245KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level timing robustness.

CY7C1245KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for full-duplex, burst-oriented memory subsystems in packet-processing and FPGA-accelerated systems demanding deterministic latency and DDR bandwidth.

FAQ

What is the function of the DOFF pin on CY7C1245KV18-400BZXC?

The DOFF pin controls the internal PLL: when pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency at up to 400 MHz; when pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and maximum 167 MHz operation. This allows backward compatibility and flexible timing trade-offs without changing hardware layout.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of Q[35:0], CQ, and CQ pins to ~50 Ω. This matches standard PCB trace impedances, minimizing reflections and ensuring clean eye diagrams at 800 MT/s - eliminating need for external series termination resistors.

Can CY7C1245KV18-400BZXC perform simultaneous read and write operations to the same address?

Yes - the QDR II+ architecture supports fully independent read and write ports. Concurrent access to the same address is permitted and results in coherent behavior: the most recently written data becomes immediately available on the next read cycle, guaranteed by the synchronous self-timed write circuitry and full data coherency design.

What is the role of QVLD in system timing validation?

QVLD is a synchronous output that pulses high exactly when Q[35:0] data is valid and stable relative to CQ/CQ edges. Unlike relying on clock-to-output timing specs alone, QVLD provides a deterministic, pin-level assertion of data readiness - enabling robust FPGA capture logic without margin-intensive static timing analysis or complex dynamic calibration.

CY7C1245KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1245KV18-400BZXC FAQ

1.How can I place an order for CY7C1245KV18-400BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1245KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1245KV18-400BZXC reliable?

The price and inventory of CY7C1245KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1245KV18-400BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1245KV18-400BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1245KV18-400BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1245KV18-400BZXC?

CY7C1245KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1245KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1245KV18-400BZXC?

For technical support, including CY7C1245KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1245KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C1245KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1245KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1245KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1245KV18-400BZXC?

All CY7C1245KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1245KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1245KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1245KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1245KV18-400BZXC Tags

  • CY7C1245KV18-400BZXC
  • CY7C1245KV18-400BZXC PDF
  • CY7C1245KV18-400BZXC Datasheet
  • CY7C1245KV18-400BZXC Specifications
  • CY7C1245KV18-400BZXC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1245KV18-400BZXC
  • Buy CY7C1245KV18-400BZXC
  • CY7C1245KV18-400BZXC Price
  • CY7C1245KV18-400BZXC Distributor
  • CY7C1245KV18-400BZXC Supplier
  • CY7C1245KV18-400BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER