Infineon Technologies CY7C1248KV18-400BZXC

Overview

CY7C1248KV18-400BZXC from Cypress Semiconductor is a 36-Mbit (2M × 18) DDR II+ synchronous SRAM with two-word burst architecture, 2.0-cycle read latency, and 400 MHz clock operation. It delivers 900 Mbps DDR data transfer using HSTL I/O, operates at 1.8 V core supply and 1.4–1.8 V I/O supply, and features echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking packet buffers.

For engineers reviewing the CY7C1248KV18-400BZXC datasheet, CY7C1248KV18-400BZXC pinout, CY7C1248KV18-400BZXC application, or CY7C1248KV18-400BZXC equivalent, key selection criteria include DDR II+ timing compliance, 165-ball FBGA package compatibility, DOFF-controlled latency mode switching, and JTAG 1149.1 test access support for system-level validation.

Technical Context

This SRAM implements a pipelined synchronous architecture where address and control inputs (A, R/W, LD, BWS) are registered on the rising edge of K only, while write data is latched on both K and K edges. Read data is driven synchronously on both K and K edges with fixed 2.0-cycle latency when DOFF = HIGH.

The device integrates a PLL for accurate data placement, echo clocks CQ/CQ aligned to output data edges, and ZQ-based output impedance tuning. It supports depth expansion via LD and R/W coordination, and includes IEEE 1149.1 boundary scan for production testability - all within a single 165-ball FBGA package.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1248KV18-400BZXC uniquely combines programmable latency, echo-clock–assisted timing closure, and ZQ-calibrated HSTL I/O - making it optimal for new 400 MHz DDR II+ designs requiring design margin and testability.

Availability

CY7C1248KV18-400BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, network processor co-processor memory, and radar signal processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1248KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1248KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1248KV18-400BZXC?

The DOFF (DLL/PLL Off) pin is an active-LOW control that disables the internal PLL. When pulled LOW, the device operates in DDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When held HIGH (typically via 10 kΩ pull-up), it enables full DDR II+ operation at up to 400 MHz with 2.0-cycle latency. This pin provides hardware-selectable timing modes without firmware intervention.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external precision resistor (typically 240 Ω) tied to ground, enabling on-die termination calibration. This adjusts the output drive strength of DQ, CQ, and CQ pins to match the system's 50 Ω data bus impedance - reducing reflections, improving eye diagram margins, and eliminating the need for discrete series resistors on each signal line.

Can CY7C1248KV18-400BZXC be used in depth-expanded memory configurations?

Yes. The device supports depth expansion using the LD (load) and R/W signals to coordinate multiple SRAMs on the same data bus. During deselection, outputs automatically tristate on the next K rising edge, allowing seamless handoff between devices without wait states. This is confirmed in the functional overview and truth table sections of the official datasheet (001-57834 Rev. *J).

Is the 165-ball FBGA package lead-free and RoHS compliant?

Yes. The "BZXC" suffix in CY7C1248KV18-400BZXC explicitly denotes a Pb-free, RoHS-compliant 165-ball FBGA package (13 × 15 × 1.4 mm). Cypress documentation confirms this variant meets JEDEC standard J-STD-020 moisture sensitivity level 3 and is qualified for reflow soldering per IPC/JEDEC J-STD-020.