Infineon Technologies CY7C12501KV18-400BZXC
- Part No.:
- CY7C12501KV18-400BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C12501KV18-400BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C12501KV18 from Cypress Semiconductor is a 36-Mbit DDR II+ SRAM configured as 1M × 36, operating at up to 400 MHz with 2.0-cycle read latency, HSTL I/O interface, and dual echo clocks (CQ/CQ) for precise data capture in high-speed memory subsystems used in network packet buffers and baseband processing.
For engineers reviewing the CY7C12501KV18 datasheet, CY7C12501KV18 pinout, CY7C12501KV18 application, or CY7C12501KV18 equivalent, key selection criteria include 1M × 36 data width, 400 MHz clock support, DOFF-configurable latency mode, QVLD timing validation, and 165-ball FBGA package compatibility with high-density PCB layouts.
Technical Context
This device implements a synchronous pipelined SRAM core with DDR II+ architecture, using two independent input clocks (K and K) to latch addresses and register write data on alternating rising edges. Read data is driven synchronously on both K and K edges, enabling true double-data-rate operation at 900 MT/s effective bandwidth.
The internal PLL ensures accurate data placement relative to echo clocks CQ/CQ, while QVLD provides edge-aligned validity indication. DOFF pin selects between 2.0-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes, allowing interoperability with legacy DDR I timing constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 36 Mbit (1M × 36), supporting burst-2 sequential access per address cycle |
| Max Clock Frequency | 400 MHz - defines maximum sustained transaction rate of 400 million cycles/sec |
| Read Latency | 2.0 clock cycles (DOFF = HIGH) - determines minimum time from address load to first valid output word |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with 1.5 V or 1.8 V logic domains |
| Core Voltage | VDD = 1.8 V ± 0.1 V - sets SRAM array operating point and power consumption baseline |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - enables high I/O count in compact footprint with thermal vias |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 900 MT/s DDR data rates |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit wide DDR data path; sampled on K/K rising edges during writes, driven on same edges during reads |
| K, K | Differential clock inputs | Primary timing references for all synchronous operations; K used for address/load, both used for data transfer |
| CQ, CQ | Output echo clocks | Free-running, phase-aligned copies of K/K for simplified external data capture without skew compensation |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to signal when DQ[35:0] carries stable, valid read data |
| DOFF | Latency mode control | High = 2.0-cycle read latency; Low = 1-cycle read latency - enables backward compatibility with DDR I systems |
| BWS[3:0] | Byte write select inputs | Four active-low signals controlling individual 9-bit byte lanes (BWS0–BWS3 map to D[8:0], D[17:9], D[26:18], D[35:27]) |
| LD | Load strobe | Latches address and R/W on rising edge of K; initiates burst-2 transaction sequence |
| R/W | Read/write direction | High = read, Low = write - interpreted only when LD is active low |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to calibrate output driver impedance to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word access, lowering EMI and routing complexity |
| Programmable read latency (1.0/2.0 cycles) | Enables drop-in replacement in DDR I designs (DOFF = LOW) or optimized high-bandwidth use (DOFF = HIGH) |
| Integrated PLL with echo clock generation | Eliminates need for external clock forwarding ICs; CQ/CQ simplify board-level timing closure at 900 MT/s |
| HSTL I/O with variable drive strength | Supports impedance-matched signaling across varying trace lengths and loading conditions without external termination |
| JTAG 1149.1 test access port | Enables boundary-scan testing of SRAM interconnects in dense BGA layouts without physical probe access |
Applications
| Network Packet Buffering | Baseband Signal Processing |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet or PCIe packets in telecom line cards requiring deterministic latency and high throughput. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly with MAC controllers and DMA engines. Use Value: 400 MHz clock + 2-word burst delivers 28.8 GB/s peak bandwidth (36 bits × 400 MHz × 2), minimizing packet queuing delay. |
Use Scenario: Real-time buffering of IQ samples in 4G/5G radio units before FFT or channel estimation processing. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing jitter-free data staging between ADC/DAC interfaces and DSP cores. Use Value: QVLD + CQ/CQ alignment guarantees sub-cycle timing margin for sample-valid window detection in FPGA-based receivers. |
| High-Speed Test Equipment | Avionics Data Acquisition |
|
Use Scenario: Capturing transient waveforms in automated test systems where deep memory depth and deterministic access are critical. IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to precision trigger clocks and digitizer sampling engines. Use Value: DOFF-selectable latency allows seamless integration with legacy test controller timing engines while retaining DDR II+ bandwidth. |
Use Scenario: Buffered sensor data logging in flight control computers requiring radiation-tolerant, long-lifecycle memory. IC Role / Device Role / Timing Role: Radiation-hardened-by-process SRAM serving as fault-tolerant intermediate storage between analog front-ends and safety-critical processors. Use Value: Neutron soft error immunity (documented in spec) combined with JTAG testability supports DO-254 compliance for airborne systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C12481KV18 | 2M × 18 organization, identical 400 MHz speed grade and FBGA package | Requires data bus width adaptation (18-bit vs 36-bit); lower density per chip but higher pin efficiency | Select when system uses 18-bit datapaths or requires depth expansion over width expansion |
| AS7C362000B-400BIN | 36-Mbit QDR II+ SRAM (1M × 36), 400 MHz, but lacks DOFF latency switching and QVLD pin | No programmable latency mode; requires fixed 1-cycle timing design; no explicit data validity signal | Choose only if latency flexibility and output timing validation are not required in the target system |
Compared with CY7C12481KV18, CY7C12501KV18 offers double the data width per access, reducing bus cycles for wide-data transfers; versus AS7C362000B-400BIN, it adds critical timing control features (DOFF, QVLD) essential for robust high-speed system integration.
Availability
CY7C12501KV18 is available at Aetrix Electronics and suitable for network packet buffering, baseband signal processing, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and full traceability.
Supply support for CY7C12501KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for demanding embedded and communications applications.
CY7C12501KV18 belongs to the DDR II+ SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth memory subsystems in networking, wireless infrastructure, and test instrumentation.
FAQ
What is the function of the DOFF pin on CY7C12501KV18?
The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables 2.0-cycle latency for optimal DDR II+ performance; when LOW, it reverts to 1-cycle latency compatible with DDR I timing. This pin must be held static during operation and is sampled only at initialization.
How does the ZQ pin affect output driver impedance?
ZQ connects to an external resistor to ground (RQ), enabling on-die calibration of DQ, CQ, and CQ output driver impedance to 0.2 × RQ. This achieves precise 25–50 Ω matching to PCB traces without external termination resistors, improving signal integrity at 900 MT/s.
Can CY7C12501KV18 operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL output drive strength is reduced versus 1.8 V, but remains compliant with HSTL Class I specifications; DC and AC timing parameters remain valid per datasheet Table 1.
What is the purpose of the QVLD signal in system timing?
QVLD is edge-aligned with CQ and CQ and asserts exactly when DQ[35:0] carries valid read data. It eliminates setup/hold uncertainty in FPGA or ASIC capture logic, allowing direct use as a data-valid strobe instead of relying on clock-phase assumptions or complex deskew circuits.
CY7C12501KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C12501KV18-400BZXC FAQ
1.How can I place an order for CY7C12501KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C12501KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C12501KV18-400BZXC reliable?
The price and inventory of CY7C12501KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C12501KV18-400BZXC is usually 5 days.
3.What payment methods are accepted for CY7C12501KV18-400BZXC?
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Once your CY7C12501KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C12501KV18-400BZXC?
For technical support, including CY7C12501KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C12501KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C12501KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C12501KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C12501KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C12501KV18-400BZXC?
All CY7C12501KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C12501KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C12501KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C12501KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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