Infineon Technologies CY7C1262XV18-450BZXC
- Part No.:
- CY7C1262XV18-450BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1262XV18-450BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1262XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with 2 M × 18 organization, dual independent DDR read/write ports, 450 MHz clock support (900 Mbps data rate), 2.5-cycle read latency, and HSTL I/Os operating at 1.4–1.6 V VDDQ. It delivers high-bandwidth buffering for network packet processing in telecom line cards.
For engineers reviewing the CY7C1262XV18 datasheet, CY7C1262XV18 pinout, CY7C1262XV18 application, or CY7C1262XV18 equivalent, key selection criteria include concurrent read/write capability, echo clock timing support (CQ/CQ), QVLD validity signaling, DOFF-configurable PLL mode (QDR-II+ vs QDR-I), and 165-ball FBGA package compatibility with high-speed PCB layout constraints.
Technical Context
This SRAM implements true dual-port synchronous architecture: separate K (read) and K̄ (write) clocks latch address and data on rising edges only, enabling fully independent read and write transactions without bus turnaround. The integrated PLL aligns output data placement to system timing requirements.
It supports two-word burst transfers per access, reducing effective address bus frequency by half. Echo clocks CQ and CQ are free-running, phase-aligned replicas of K and K̄, simplifying capture in FPGA-based systems. QVLD provides edge-aligned valid-data indication synchronized to CQ/CQ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 configuration) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (with DOFF = HIGH); 1 cycle (with DOFF = LOW, QDR-I mode) |
| VDD / VDDQ | Core: 1.8 V ± 0.1 V; I/O: 1.4–1.6 V - supports 1.5 V interface standard |
| I/O Standard | HSTL Class I inputs; variable-drive HSTL outputs - matches FPGA memory controllers |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - RoHS-compliant, thermal-performance-optimized |
| Special Features | JTAG 1149.1 TAP, programmable output impedance (ZQ pin), synchronous self-timed writes |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, JEDEC MO-270 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edges of K̄; supports byte-write via BWS0/BWS1 |
| Q[17:0] | Synchronous read data output | Driven on rising edges of K; tristated when RPS deasserted |
| K / K̄ | Positive/negative input clocks | Rising edges control all synchronous operations; no internal inversion |
| CQ / CQ̄ | Read/write echo clocks | Free-running, phase-aligned copies of K/K̄ for simplified data capture |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ̄; asserts one cycle after first valid Q word |
| DOFF | PLL disable control | Active-Low; disables PLL to enter QDR-I mode (≤167 MHz, 1-cycle latency) |
| ZQ | Output impedance calibration | Connects to external resistor to ground to set 0.2×RQ drive strength |
| RPS / WPS | Read/write port select | Active-Low; enables port operation and controls pending access completion |
| BWS[1:0] | Byte write select | Active-Low; BWS0 controls D[8:0], BWS1 controls D[17:9] |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead; enables full-duplex 900 MB/s sustained bandwidth |
| Two-word burst architecture | Halves required address transition rate; reduces routing congestion on dense backplanes |
| Integrated PLL with echo clocks | Enables deterministic setup/hold margins in 450 MHz systems using FPGA I/O registers |
| Programmable output drive impedance | ZQ pin allows dynamic matching to 50 Ω or 60 Ω trace impedances without external termination |
| QVLD validity signaling | Removes need for fixed-latency assumptions; enables adaptive data capture in variable-clock domains |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with zero-latency read-after-write capability. IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between ingress and egress traffic engines, synchronized to 450 MHz line-rate clocks. Use Value: Concurrent read/write eliminates arbitration delay; 2.5-cycle latency ensures sub-6 ns response time for cut-through forwarding. |
Use Scenario: Capturing high-fidelity waveform samples from multi-GHz ADCs in automated test systems with real-time pattern analysis. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to FPGA logic fabric via dedicated DDR read/write ports. Use Value: Echo clocks (CQ/CQ̄) and QVLD enable reliable 900 MT/s sampling without complex deskew circuitry. |
| Baseband Processing Buffer | PCIe Switch Lookaside Cache |
|
Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in 5G NR baseband units. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting parallel read/write streams under strict timing closure. Use Value: 1.8 V core + 1.5 V I/O reduces power vs. DDR3 while delivering comparable bandwidth in ASIC/FPGA co-designs. |
Use Scenario: Accelerating address translation and header parsing in PCIe Gen4/Gen5 switch silicon by caching frequently accessed routing tables. IC Role / Device Role / Timing Role: Ultra-low-latency lookaside cache bridging CPU-side command queues and fabric-side data paths. Use Value: Synchronous self-timed writes guarantee atomic updates; JTAG boundary scan supports in-system validation of high-speed interconnects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-450BIN | Same density (36 Mbit), x18 config, but uses SSTL-15 I/Os and lacks echo clocks/QVLD | Requires external strobe generation; less suitable for FPGA-based systems needing CQ-synchronized capture | Select if cost-sensitive and system already implements custom timing recovery |
| MT47H64M16HR-37E | DDR2 SDRAM (1 Gbit), higher density but asynchronous command bus, 13.75 ns CL | Higher latency, burst-oriented access; not suitable for true concurrent read/write at 450 MHz | Select only when sequential bandwidth > random access latency is primary requirement |
Compared with AS7C362000B-450BIN and MT47H64M16HR-37E, CY7C1262XV18 uniquely delivers deterministic 2.5-cycle latency with hardware-validity signaling and echo clocks-critical for real-time packet buffering and test instrumentation where jitter tolerance is sub-100 ps.
Availability
CY7C1262XV18 is available at Aetrix Electronics and suitable for network infrastructure, semiconductor test equipment, 5G baseband processing, and PCIe switching applications requiring stable component supply across multi-year production cycles.
Supply support for CY7C1262XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, technical support, and long-term supply commitment for the QDR® II+ Xtreme SRAM portfolio.
This device belongs to Infineon's high-performance memory product line, engineered specifically for deterministic, low-latency, dual-port buffering in wireline and wireless infrastructure where DDR SDRAM latency and command overhead are unacceptable.
FAQ
What is the function of the DOFF pin, and how does it affect timing?
The DOFF (PLL Turn Off) pin is an active-Low control that disables the internal PLL. When asserted, the device operates in QDR-I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. All timing parameters shift to QDR-I specifications, including K–Q and K̄–D setup/hold windows. Pull DOFF HIGH via ≤10 kΩ resistor for normal QDR-II+ operation at 450 MHz.
How does the ZQ pin calibrate output drive strength?
ZQ connects to an external precision resistor (RQ) tied to ground. The device measures RQ and sets CQ, CQ̄, and Q[17:0] output impedance to 0.2 × RQ. For example, a 240 Ω resistor yields 48 Ω drive strength. Connecting ZQ directly to VDDQ enables minimum impedance mode (~25 Ω). ZQ must never be left floating or tied to VSS.
Can CY7C1262XV18 support depth expansion, and how is it implemented?
Yes - depth expansion is supported using RPS (Read Port Select) and WPS (Write Port Select) pins. Multiple devices can share the same address/data buses; each is enabled independently via its RPS/WPS signal. This allows building wider or deeper memory arrays without external multiplexing, preserving full concurrency across all devices in the bank.
Is JTAG boundary scan supported, and what standards does it comply with?
Yes - CY7C1262XV18 integrates IEEE 1149.1-compliant TAP controller with TDI, TDO, TCK, and TMS pins. It supports instruction register loading, boundary scan register access, and IDCODE readback. Scan chain integrity and pin-level interconnect testing are fully supported per JTAG specification, enabling in-circuit validation of high-speed FBGA solder joints.
CY7C1262XV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1262XV18-450BZXC FAQ
1.How can I place an order for CY7C1262XV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1262XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1262XV18-450BZXC reliable?
The price and inventory of CY7C1262XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1262XV18-450BZXC is usually 5 days.
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Once your CY7C1262XV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1262XV18-450BZXC?
For technical support, including CY7C1262XV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1262XV18-450BZXC requirements.
6.How does Aetrix verify that CY7C1262XV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1262XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1262XV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1262XV18-450BZXC?
All CY7C1262XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1262XV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1262XV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C1262XV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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