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Infineon Technologies CY7C1262XV18-450BZXC

Part No.:
CY7C1262XV18-450BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1262XV18-450BZXC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,371

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Product details

Overview

CY7C1262XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with 2 M × 18 organization, dual independent DDR read/write ports, 450 MHz clock support (900 Mbps data rate), 2.5-cycle read latency, and HSTL I/Os operating at 1.4–1.6 V VDDQ. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1262XV18 datasheet, CY7C1262XV18 pinout, CY7C1262XV18 application, or CY7C1262XV18 equivalent, key selection criteria include concurrent read/write capability, echo clock timing support (CQ/CQ), QVLD validity signaling, DOFF-configurable PLL mode (QDR-II+ vs QDR-I), and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements true dual-port synchronous architecture: separate K (read) and K̄ (write) clocks latch address and data on rising edges only, enabling fully independent read and write transactions without bus turnaround. The integrated PLL aligns output data placement to system timing requirements.

It supports two-word burst transfers per access, reducing effective address bus frequency by half. Echo clocks CQ and CQ are free-running, phase-aligned replicas of K and K̄, simplifying capture in FPGA-based systems. QVLD provides edge-aligned valid-data indication synchronized to CQ/CQ.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 configuration)
Max Clock Frequency 450 MHz - enables 900 MT/s DDR throughput per port
Read Latency 2.5 cycles (with DOFF = HIGH); 1 cycle (with DOFF = LOW, QDR-I mode)
VDD / VDDQ Core: 1.8 V ± 0.1 V; I/O: 1.4–1.6 V - supports 1.5 V interface standard
I/O Standard HSTL Class I inputs; variable-drive HSTL outputs - matches FPGA memory controllers
Package 165-ball FBGA (13 × 15 × 1.4 mm) - RoHS-compliant, thermal-performance-optimized
Special Features JTAG 1149.1 TAP, programmable output impedance (ZQ pin), synchronous self-timed writes

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, JEDEC MO-270 compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edges of K̄; supports byte-write via BWS0/BWS1
Q[17:0] Synchronous read data output Driven on rising edges of K; tristated when RPS deasserted
K / K̄ Positive/negative input clocks Rising edges control all synchronous operations; no internal inversion
CQ / CQ̄ Read/write echo clocks Free-running, phase-aligned copies of K/K̄ for simplified data capture
QVLD Valid data indicator Edge-aligned with CQ/CQ̄; asserts one cycle after first valid Q word
DOFF PLL disable control Active-Low; disables PLL to enter QDR-I mode (≤167 MHz, 1-cycle latency)
ZQ Output impedance calibration Connects to external resistor to ground to set 0.2×RQ drive strength
RPS / WPS Read/write port select Active-Low; enables port operation and controls pending access completion
BWS[1:0] Byte write select Active-Low; BWS0 controls D[8:0], BWS1 controls D[17:9]

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead; enables full-duplex 900 MB/s sustained bandwidth
Two-word burst architecture Halves required address transition rate; reduces routing congestion on dense backplanes
Integrated PLL with echo clocks Enables deterministic setup/hold margins in 450 MHz systems using FPGA I/O registers
Programmable output drive impedance ZQ pin allows dynamic matching to 50 Ω or 60 Ω trace impedances without external termination
QVLD validity signaling Removes need for fixed-latency assumptions; enables adaptive data capture in variable-clock domains

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with zero-latency read-after-write capability.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between ingress and egress traffic engines, synchronized to 450 MHz line-rate clocks.

Use Value: Concurrent read/write eliminates arbitration delay; 2.5-cycle latency ensures sub-6 ns response time for cut-through forwarding.

Use Scenario: Capturing high-fidelity waveform samples from multi-GHz ADCs in automated test systems with real-time pattern analysis.

IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to FPGA logic fabric via dedicated DDR read/write ports.

Use Value: Echo clocks (CQ/CQ̄) and QVLD enable reliable 900 MT/s sampling without complex deskew circuitry.

Baseband Processing Buffer PCIe Switch Lookaside Cache

Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in 5G NR baseband units.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting parallel read/write streams under strict timing closure.

Use Value: 1.8 V core + 1.5 V I/O reduces power vs. DDR3 while delivering comparable bandwidth in ASIC/FPGA co-designs.

Use Scenario: Accelerating address translation and header parsing in PCIe Gen4/Gen5 switch silicon by caching frequently accessed routing tables.

IC Role / Device Role / Timing Role: Ultra-low-latency lookaside cache bridging CPU-side command queues and fabric-side data paths.

Use Value: Synchronous self-timed writes guarantee atomic updates; JTAG boundary scan supports in-system validation of high-speed interconnects.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-450BIN Same density (36 Mbit), x18 config, but uses SSTL-15 I/Os and lacks echo clocks/QVLD Requires external strobe generation; less suitable for FPGA-based systems needing CQ-synchronized capture Select if cost-sensitive and system already implements custom timing recovery
MT47H64M16HR-37E DDR2 SDRAM (1 Gbit), higher density but asynchronous command bus, 13.75 ns CL Higher latency, burst-oriented access; not suitable for true concurrent read/write at 450 MHz Select only when sequential bandwidth > random access latency is primary requirement

Compared with AS7C362000B-450BIN and MT47H64M16HR-37E, CY7C1262XV18 uniquely delivers deterministic 2.5-cycle latency with hardware-validity signaling and echo clocks-critical for real-time packet buffering and test instrumentation where jitter tolerance is sub-100 ps.

Availability

CY7C1262XV18 is available at Aetrix Electronics and suitable for network infrastructure, semiconductor test equipment, 5G baseband processing, and PCIe switching applications requiring stable component supply across multi-year production cycles.

Supply support for CY7C1262XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, technical support, and long-term supply commitment for the QDR® II+ Xtreme SRAM portfolio.

This device belongs to Infineon's high-performance memory product line, engineered specifically for deterministic, low-latency, dual-port buffering in wireline and wireless infrastructure where DDR SDRAM latency and command overhead are unacceptable.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF (PLL Turn Off) pin is an active-Low control that disables the internal PLL. When asserted, the device operates in QDR-I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. All timing parameters shift to QDR-I specifications, including K–Q and K̄–D setup/hold windows. Pull DOFF HIGH via ≤10 kΩ resistor for normal QDR-II+ operation at 450 MHz.

How does the ZQ pin calibrate output drive strength?

ZQ connects to an external precision resistor (RQ) tied to ground. The device measures RQ and sets CQ, CQ̄, and Q[17:0] output impedance to 0.2 × RQ. For example, a 240 Ω resistor yields 48 Ω drive strength. Connecting ZQ directly to VDDQ enables minimum impedance mode (~25 Ω). ZQ must never be left floating or tied to VSS.

Can CY7C1262XV18 support depth expansion, and how is it implemented?

Yes - depth expansion is supported using RPS (Read Port Select) and WPS (Write Port Select) pins. Multiple devices can share the same address/data buses; each is enabled independently via its RPS/WPS signal. This allows building wider or deeper memory arrays without external multiplexing, preserving full concurrency across all devices in the bank.

Is JTAG boundary scan supported, and what standards does it comply with?

Yes - CY7C1262XV18 integrates IEEE 1149.1-compliant TAP controller with TDI, TDO, TCK, and TMS pins. It supports instruction register loading, boundary scan register access, and IDCODE readback. Scan chain integrity and pin-level interconnect testing are fully supported per JTAG specification, enabling in-circuit validation of high-speed FBGA solder joints.

CY7C1262XV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1262XV18-450BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1262XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1262XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1262XV18-450BZXC is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1262XV18-450BZXC?

For technical support, including CY7C1262XV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1262XV18-450BZXC requirements.

6.How does Aetrix verify that CY7C1262XV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1262XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1262XV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1262XV18-450BZXC?

All CY7C1262XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1262XV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1262XV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C1262XV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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