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Infineon Technologies CY7C1263KV18-400BZXI

Part No.:
CY7C1263KV18-400BZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1263KV18-400BZXI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,178

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Product details

Overview

CY7C1263KV18 from Cypress Semiconductor is a 36-Mbit QDR® II+ SRAM with 2M × 18 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency, and separate read/write DDR ports operating at 800 Mbps per pin. It delivers 14.4 Gbps aggregate bandwidth in high-speed networking and packet buffering applications.

For engineers reviewing the CY7C1263KV18 datasheet, CY7C1263KV18 pinout, CY7C1263KV18 application, or CY7C1263KV18 equivalent, key selection criteria include its 165-ball FBGA package, HSTL I/O compatibility, DOFF-controlled PLL mode switching, echo clock (CQ/CQ) timing support, and byte-write select (BWS0/BWS1) for partial-word writes.

Technical Context

The device implements a true dual-port synchronous architecture with independent read and write data paths-no bus turnaround required. Its four-word burst transfers occur over two K/K clock cycles, with address latching on alternating rising edges of K and K to enable concurrent access.

Internal PLL enables precise 2.5-cycle read latency when DOFF = HIGH; disabling PLL via DOFF = LOW reverts operation to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ and CQ are phase-aligned free-running outputs synchronized to K and K, respectively, simplifying high-speed data capture.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (2M × 18)
Max Clock Frequency400 MHz - supports 800 Mbps DDR data rate per pin
Read Latency2.5 cycles - enables deterministic timing for pipeline-constrained systems
I/O VoltageVDDQ = 1.4 V to 1.8 V - compatible with both 1.5 V and 1.8 V HSTL interfaces
Core VoltageVDD = 1.8 V ± 0.1 V - ensures stable internal SRAM array operation
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density PCB routing
Burst LengthFour 18-bit words per access - reduces address bus toggling by 75% vs. single-word

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
K / KInput clocksRising edges latch all synchronous inputs (address, data, controls); drive DDR output timing
CQ / CQEcho clocksFree-running, phase-aligned copies of K/K - simplify source-synchronous data capture
RPS / WPSPort selectsActive-LOW enables independent read/write port activation - enables depth expansion
BWS0 / BWS1Byte write selectsActive-LOW controls 9-bit segments D[8:0] and D[17:9] - enables partial-word writes without read-modify-write
Q[17:0]Data outputsDDR outputs driven on K/K rising edges - deliver four sequential 18-bit words per access
D[17:0]Data inputsDDR inputs sampled on K/K rising edges - accept four sequential 18-bit words per write
DOFFPLL controlActive-LOW disables internal PLL - switches between QDR II+ (2.5-cycle) and QDR I (1-cycle) modes
QVLDValid data indicatorEdge-aligned with CQ/CQ - signals validity of Q[17:0] during burst reads

Key Features

FeatureDesign Value
Separate read/write DDR portsEliminates bus turnaround overhead - enables full-duplex memory access at 400 MHz
Four-word burst architectureReduces address bus frequency by 4× - lowers routing complexity and EMI in high-speed designs
Programmable output impedance (ZQ)Enables on-die termination matching to system data bus - improves signal integrity without external resistors
JTAG 1149.1 test access portSupports boundary scan testing and in-system programming - enhances manufacturing test coverage
DOFF-selectable latency modeHardware-switchable between 2.5-cycle (QDR II+) and 1-cycle (QDR I) read latency - aids design reuse across speed grades

Applications

Packet Buffering in Switch ASICsLine Card Memory in Telecom Routers

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switch fabric.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with concurrent read/write capability to sustain full line-rate traffic.

Use Value: 14.4 Gbps aggregate bandwidth and 2.5-cycle deterministic latency ensure zero packet loss under bursty traffic loads.

Use Scenario: Acting as shared memory for distributed forwarding engines on OC-192/STM-64 line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM providing simultaneous access to control plane and data plane processors.

Use Value: Independent RPS/WPS pins enable lock-free inter-processor communication without arbitration overhead.

High-Speed Test Equipment MemoryReal-Time Video Frame Buffer

Use Scenario: Capturing high-resolution waveform samples at >1 GS/s in automated test systems.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer synchronizing to external sampling clock via K/K inputs.

Use Value: Four-word burst + echo clocks (CQ/CQ) enable precise source-synchronous capture with <100 ps skew.

Use Scenario: Storing uncompressed 4K video frames for real-time processing in broadcast encoders.

IC Role / Device Role / Timing Role: Frame buffer supporting simultaneous write (sensor input) and read (encoder output) at 60 fps.

Use Value: Byte-write select (BWS0/BWS1) allows partial-line updates without corrupting adjacent pixel data.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615036-Mbit QDR II+, 450 MHz max, ×18, same 165-ball FBGA but different pinout and HSTL-18 I/O onlyRequires board redesign due to non-pin-compatible layout; lacks ZQ impedance tuningChoose if higher speed (450 MHz) is critical and layout revision is feasible
ISSI IS61WV102418B18-Mbit asynchronous SRAM, 15 ns access, ×18, SOJ-54 package - no DDR, no burst, no echo clocksOnly suitable for low-speed control-plane storage; cannot replace in data-path rolesConsider only for cost-sensitive, non-real-time backup memory where bandwidth is not required

Compared with IDT72T36150, CY7C1263KV18 offers superior signal integrity via ZQ calibration and identical functional behavior at 400 MHz, while ISSI IS61WV102418B lacks the concurrency, timing precision, and bandwidth needed for QDR use cases.

Availability

CY7C1263KV18 is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, high-speed test equipment, and real-time video frame buffering requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1263KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

This device belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-switched infrastructure where concurrent read/write throughput and sub-nanosecond timing alignment are critical.

FAQ

What is the function of the DOFF pin on CY7C1263KV18?

The DOFF pin controls the internal PLL: when pulled HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency and up to 400 MHz clock rate; when pulled LOW, the PLL is disabled and it reverts to QDR I mode with 1-cycle latency and a maximum frequency of 167 MHz. This allows hardware-selectable latency/speed trade-offs without firmware changes.

How does the ZQ pin affect output driver behavior?

The ZQ pin sets output impedance for Q[17:0], CQ, and CQ signals by connecting an external resistor (RQ) from ZQ to ground; the device calibrates drivers to 0.2 × RQ. If tied directly to VDDQ, minimum impedance mode activates. ZQ must never be left floating or grounded, as that disables impedance tuning and risks signal integrity degradation.

Can CY7C1263KV18 perform partial-word writes without read-modify-write?

Yes - using BWS0 and BWS1 (active-LOW byte write selects), the device writes only D[8:0] or D[17:9] respectively, leaving unselected bytes unchanged. This eliminates the need for external logic or software overhead to preserve existing data in 18-bit words during incremental updates.

What timing role do CQ and CQ serve in system-level design?

CQ and CQ are echo clocks synchronized to K and K, respectively, and edge-aligned with valid Q[17:0] data. They provide a local, low-skew reference for FPGA or ASIC capture logic - enabling reliable DDR data sampling without complex deskew circuitry or board-level delay matching.

CY7C1263KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1263KV18-400BZXI FAQ

1.How can I place an order for CY7C1263KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1263KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1263KV18-400BZXI reliable?

The price and inventory of CY7C1263KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1263KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1263KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1263KV18-400BZXI transactions.

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4.How is shipping managed for CY7C1263KV18-400BZXI?

CY7C1263KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1263KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1263KV18-400BZXI?

For technical support, including CY7C1263KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1263KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C1263KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1263KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1263KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1263KV18-400BZXI?

All CY7C1263KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1263KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1263KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C1263KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1263KV18-400BZXI Tags

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