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Infineon Technologies CY7C1263KV18-550BZXC

Part No.:
CY7C1263KV18-550BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1263KV18-550BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,860

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Product details

Overview

CY7C1263KV18 from Cypress Semiconductor is a 36-Mbit QDR® II+ SRAM with 2M × 18 organization, 550 MHz clock frequency, 2.5-cycle read latency, and separate read/write DDR ports operating at 1100 Mbps per port. It uses HSTL I/O, 1.8 V core supply (VDD = 1.8 V ± 0.1 V), and 1.4–1.8 V I/O supply (VDDQ), housed in a 165-ball FBGA (13 × 15 × 1.4 mm). It enables high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1263KV18 datasheet, CY7C1263KV18 pinout, CY7C1263KV18 application, or CY7C1263KV18 equivalent, key selection criteria include concurrent read/write bandwidth, echo-clock–based data capture timing, DOFF-configurable latency mode, and depth expansion via RPS/WPS control.

Technical Context

The CY7C1263KV18 implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 19-bit address bus. All inputs are registered on rising edges of K/K clocks; outputs are edge-aligned to CQ/CQ echo clocks and driven by output registers synchronized to K/K.

It supports four-word burst transfers per access (72-bit total per read/write cycle), full data coherency, and on-chip self-timed writes. The integrated PLL enables precise 2.5-cycle read latency when DOFF = HIGH; disabling the PLL (DOFF = LOW) reverts operation to QDR I mode with 1-cycle latency up to 167 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2M × 18 configuration)
Max Clock Frequency 550 MHz - enables 1100 MT/s DDR data rate per port
Read Latency 2.5 clock cycles - fixed pipeline delay for deterministic timing closure
Core Supply Voltage VDD = 1.8 V ± 0.1 V - defines internal logic voltage and power integrity margin
I/O Supply Range VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system buses
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory stacking
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Write data input bus 18-bit synchronous data sampled on rising edges of K/K; supports byte-write via BWS0/BWS1
Q[17:0] Read data output bus 18-bit DDR output aligned to CQ/CQ; tristated automatically when RPS is deasserted
RPS, WPS Port select controls Active-LOW synchronous enables for read/write ports; enable depth expansion without external logic
K, K Dual-phase input clocks Rising edges drive all register transfers; K used for read port, K for write port in standard mode
CQ, CQ Output echo clocks Free-running, phase-matched copies of K/K - simplify high-speed data capture in FPGA/ASIC receivers
QVLD Data validity indicator Edge-aligned with CQ/CQ; asserts one cycle before valid Q[17:0] data appears, enabling reliable latch timing
DOFF PLL disable control Active-LOW pin that switches device from QDR II+ (2.5-cycle latency) to QDR I (1-cycle latency) mode
ZQ Impedance calibration input Connects to external resistor to ground to tune output driver impedance to match PCB trace Z₀ (typically 50 Ω)

Key Features

Feature Design Value
Separate read/write DDR ports Eliminates data bus turnaround overhead - enables true concurrent read+write at full bandwidth
Four-word burst architecture Reduces effective address bus frequency by 4× - lowers routing complexity and timing skew in high-speed designs
Programmable output impedance (ZQ) Enables on-die termination matching to system bus impedance - reduces stub reflections and improves eye margin
DOFF-configurable latency mode Hardware-selectable 2.5-cycle (QDR II+) or 1-cycle (QDR I) read latency - supports migration path and mixed-speed systems
JTAG 1149.1 test access port Enables boundary-scan testing and in-system debug without requiring additional test pads or probes

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-throughput dual-port SRAM serving as shared buffer between ingress parser and egress scheduler ASICs.

Use Value: Concurrent 1100 MT/s read+write bandwidth eliminates arbitration bottlenecks and sustains 10 Gbps+ line rates.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH add-drop multiplexers.

IC Role / Device Role / Timing Role: Synchronous burst memory interfacing with SerDes PHYs and traffic management controllers.

Use Value: Echo clocks (CQ/CQ) align data capture to FPGA IOB timing, reducing setup/hold violations at 550 MHz.

High-Speed Test Equipment Memory Real-Time Signal Processing Buffer

Use Scenario: Capturing high-resolution waveform samples in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Low-latency memory staging buffer between DAC and control logic with deterministic 2.5-cycle read response.

Use Value: DOFF pin allows fallback to QDR I mode during system bring-up or low-power test modes without hardware change.

Use Scenario: Intermediate data storage between FFT engines and channelizers in radar DSP subsystems.

IC Role / Device Role / Timing Role: Pipelined burst SRAM providing zero-wait-state access to streaming complex sample data.

Use Value: Full data coherency ensures latest processed results are always available - critical for closed-loop feedback paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR II, 1000 MHz interface (500 MHz clock), no PLL, fixed 2-cycle latency Lacks echo clocks and programmable impedance; requires external clock forwarding and termination Select when system design already uses discrete clock distribution and does not require ZQ calibration or CQ/CQ alignment
ISSI IS61WV102418BLL-10BLI 18-Mbit sync SRAM, single-port, 10 ns access, 3.3 V only, no DDR or burst capability Lower density, no concurrent access, incompatible voltage and interface - not drop-in Consider only for cost-sensitive, non-concurrent, sub-200 MHz legacy upgrades where bandwidth is not constrained

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, the CY7C1263KV18 uniquely delivers 550 MHz operation with echo-clock–assisted timing closure, on-die impedance tuning, and hardware-selectable latency - making it optimal for new high-speed networking and test equipment designs.

Availability

CY7C1263KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and real-time signal processing buffer applications requiring stable component supply across extended production lifecycles.

Supply support for CY7C1263KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1263KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in packet-switched infrastructure where concurrent read/write throughput and timing predictability are critical.

FAQ

What is the function of the DOFF pin on CY7C1263KV18?

The DOFF (PLL Disable) pin is an active-LOW control that disables the internal phase-locked loop. When asserted (tied LOW), the device operates in QDR I mode with 1-cycle read latency and maximum frequency limited to 167 MHz. When deasserted (pulled HIGH), it enables full QDR II+ operation at up to 550 MHz with 2.5-cycle latency. This provides hardware-selectable performance modes without firmware changes.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, allowing the device to calibrate its output driver impedance to match the system data bus characteristic impedance. This calibration sets CQ, CQ, and Q[17:0] output impedance to 0.2 × RQ, minimizing reflections and improving eye diagram margins at 1100 MT/s. Leaving ZQ unconnected or tied to GND violates specifications and risks signal integrity failure.

Can CY7C1263KV18 be used with a 1.5 V I/O supply?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. Its HSTL Class I inputs and variable-drive HSTL outputs are designed for compatibility with both 1.5 V and 1.8 V system interfaces. DC electrical characteristics (e.g., VIH/VIL thresholds, drive strength) are guaranteed across this full range, enabling seamless integration into mixed-voltage FPGA or ASIC platforms.

What is the role of RPS and WPS in depth expansion?

RPS (Read Port Select) and WPS (Write Port Select) are active-LOW synchronous control signals that independently enable or disable each port. In depth expansion configurations, multiple CY7C1263KV18 devices share the same address and data buses; RPS/WPS are decoded externally to select which device responds to a given read or write transaction - eliminating need for external multiplexers or glue logic while preserving full concurrency per device.

CY7C1263KV18-550BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1263KV18-550BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1263KV18-550BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1263KV18-550BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1263KV18-550BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1263KV18-550BZXC?

For technical support, including CY7C1263KV18-550BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1263KV18-550BZXC requirements.

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All CY7C1263KV18-550BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1263KV18-550BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1263KV18-550BZXC?

All CY7C1263KV18-550BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1263KV18-550BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1263KV18-550BZXC part is unused and in its original packaging.

Return procedure for CY7C1263KV18-550BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1263KV18-550BZXC Tags

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