Infineon Technologies CY7C1263V18-400BZC

Overview

CY7C1263V18 from Cypress Semiconductor is a 2M × 18-bit (36-Mbit), 1.8V synchronous QDR-II+ SRAM with independent read/write ports, 400 MHz clock operation, 2.5-cycle read latency, and DDR interfaces delivering 800 MT/s effective data rate. It implements HSTL I/O, DLL-based timing alignment, and echo clocks (CQ/CQ) for high-speed data capture in packet buffering and network switching applications.

For engineers reviewing the CY7C1263V18 datasheet, CY7C1263V18 pinout, CY7C1263V18 application, or CY7C1263V18 equivalent, key selection criteria include burst depth (4-word), port isolation, VDDQ range (1.4V–1.8V), FBGA-165 package compatibility, and JTAG 1149.1 test support for system-level validation.

Technical Context

The CY7C1263V18 uses a pipelined QDR-II+ architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its dual-clock interface (K/K) latches addresses and controls on rising edges only, while internal DLL aligns CQ/CQ echo clocks to ±50 ps skew relative to K/K for precise DDR data capture.

It supports synchronous self-timed writes with byte write selects (BWS[1:0]), read port select (RPS), write port select (WPS), and QVLD output to indicate valid DDR-read data. Address inputs (A[18:0]) are multiplexed for both ports, enabling 512K × 18 array access with 19-bit addressing.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Compatible with standard reflow profiles for lead-free assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, the CY7C1263V18 delivers 60% higher bandwidth (800 vs. 500 MT/s), integrated DLL timing control, and flexible VDDQ scaling - making it optimal for next-generation packet-processing pipelines requiring deterministic latency and scalable I/O voltage.

Availability

CY7C1263V18 is available at Aetrix Electronics and suitable for network switching, telecom line cards, baseband processing, and high-speed test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1263V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with focus on signal integrity and timing-critical applications.

The QDR-II+ SRAM product line targets high-bandwidth, low-latency memory interfacing in ASIC/FPGA-based infrastructure equipment - specifically engineered for concurrent read/write operations without bus arbitration overhead.

FAQ

What is the minimum VDDQ voltage supported by CY7C1263V18?

The CY7C1263V18 supports VDDQ from 1.4 V to 1.8 V, as confirmed in the "DC Electrical Characteristics" section of datasheet 001-06366 Rev. *E. Operation at 1.4 V enables compatibility with lower-voltage FPGA I/O banks while maintaining HSTL Class I signal integrity and timing margins.

Can CY7C1263V18 operate without the DLL enabled?

Yes - asserting DOFF (DLL Turn Off) pin LOW disables the internal DLL, reverting the device to QDR-I timing mode with maximum 167 MHz operation. In this mode, CQ/CQ become direct buffered copies of K/K, and read latency increases to 3 cycles.

How many address bits does CY7C1263V18 require for full memory access?

CY7C1263V18 uses A[18:0] - 19 address inputs - to access its 2M × 18-bit memory array (512K × 18 per internal bank × 4 banks). All addresses are latched on the rising edge of K, and the same bus serves both read and write ports.

Is ZQ pin mandatory for normal operation?

ZQ must be connected - either to a 240 Ω resistor to GND for impedance calibration or directly to VDDQ for minimum-drive mode. Leaving ZQ floating or tied to GND violates the Absolute Maximum Ratings and may cause output timing violations or excessive current draw.