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Infineon Technologies CY7C1264XV18-366BZXC

Part No.:
CY7C1264XV18-366BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1264XV18-366BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,210

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Product details

Overview

CY7C1264XV18-366BZXC from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with 1 M × 36 organization, 2.5-cycle read latency, and dual DDR interfaces operating at 366 MHz (732 MT/s). It features separate read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and PLL-based timing alignment for high-speed packet buffering in networking ASICs and FPGA-based line cards.

For engineers reviewing the CY7C1264XV18-366BZXC datasheet, CY7C1264XV18-366BZXC pinout, CY7C1264XV18-366BZXC application, or CY7C1264XV18-366BZXC equivalent, key selection criteria include burst depth (2-word), I/O voltage range (1.4–1.6 V), HSTL-compatible interface, 165-ball FBGA package, and DOFF-controlled PLL enable/disable for QDR-I mode fallback.

Technical Context

This SRAM implements QDR II+ Xtreme architecture with fully independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling concurrent access without bus turnaround. The internal PLL aligns output timing to echo clocks CQ/CQ for reliable data capture at 732 MT/s.

It supports byte-selectable writes via four BWS inputs (BWS0–BWS3), synchronous self-timed writes, and full data coherency. Core supply is 1.8 V ± 0.1 V; I/Os operate at 1.4–1.6 V with HSTL drivers and programmable impedance tuning via ZQ pin.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1 M × 36 configuration)
Max Clock Frequency 366 MHz - enables 732 MT/s DDR throughput per port
Read Latency 2.5 clock cycles - fixed pipeline delay for deterministic timing closure
Core Voltage 1.8 V ± 0.1 V - requires tight regulation for stable SRAM cell operation
I/O Voltage Range 1.4 V to 1.6 V - matches HSTL Class I/II logic levels for signal integrity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory modules
Interface Standard HSTL inputs / variable-drive HSTL outputs - ensures impedance-matched signaling up to 366 MHz

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS0–BWS3
Q[35:0] Synchronous read data output 36-bit DDR output bus edge-aligned with CQ/CQ; tristated when RPS is deasserted
K, K Dual input clocks Rising-edge-triggered clocks for address/data capture; K controls read port, K controls write port
CQ, CQ Echo clocks Free-running, phase-aligned copies of K/K used for source-synchronous data capture at receiver
QVLD Data validity indicator Active-HIGH pulse synchronized to CQ/CQ edges, confirms valid Q[35:0] data presence
DOFF PLL disable control Active-LOW input; disables internal PLL to revert to QDR-I timing (max 167 MHz) for compatibility or power savings
ZQ Impedance calibration reference Connects to external resistor to ground to tune CQ/CQ/Q[35:0] output drive strength to match PCB trace impedance
RPS, WPS Port select controls Active-LOW signals enabling independent read/write port activation; allow depth expansion with multiple devices
BWS[3:0] Byte write selects Four active-LOW signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) for partial writes

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround overhead, enabling true concurrent read+write operations without arbitration delay
Two-word burst architecture Delivers two sequential 36-bit words per address cycle, halving required address bus frequency vs. single-word SRAMs
PLL-based timing alignment Ensures precise placement of Q[35:0] and QVLD relative to CQ/CQ, simplifying high-speed PCB layout and timing closure
HSTL I/O with ZQ calibration Enables impedance-matched signaling at 366 MHz; ZQ pin allows dynamic output drive adjustment to compensate for process/voltage/temperature variation
DOFF-configurable latency mode Hardware-selectable operation between QDR-II+ (2.5-cycle, 366 MHz) and QDR-I (1-cycle, ≤167 MHz) for design flexibility or legacy compatibility

Applications

High-Speed Packet Buffering Network Processor Interface

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffer between MAC and traffic manager, accepting writes from one port while servicing reads from another.

Use Value: 732 MT/s aggregate bandwidth and 2.5-cycle latency enable real-time flow control without head-of-line blocking.

Use Scenario: Interfacing with multi-core network processors requiring low-latency, high-throughput memory access.

IC Role / Device Role / Timing Role: Synchronous burst SRAM providing deterministic read/write response aligned to processor clock domains via echo clocks.

Use Value: CQ/CQ synchronization and QVLD eliminate setup/hold uncertainty, reducing FPGA logic needed for data capture.

FPGA-Based Protocol Acceleration Telecom Baseband Processing

Use Scenario: Offloading packet classification and lookup table storage in reconfigurable acceleration engines.

IC Role / Device Role / Timing Role: Memory resource mapped into FPGA's AXI or Avalon-MM fabric, accessed via custom controller with burst-aware addressing.

Use Value: 1 M × 36 organization and byte-write capability support sparse updates to large rule sets without full-line overwrites.

Use Scenario: Buffering IQ samples between digital front-end and baseband DSP in 4G/5G radio units.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory staging data between ADC/DAC interfaces and processing pipelines.

Use Value: 1.8 V core + 1.5 V I/O reduces dynamic power vs. 3.3 V SRAMs while maintaining 366 MHz operation for real-time sample rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1264XV18-450BZXC Higher max frequency (450 MHz), same 1 M × 36 config, identical pinout and feature set Requires tighter PCB layout and higher-power supply stability; suited for systems needing >732 MT/s bandwidth Select when system clock domain supports 450 MHz and timing margin analysis confirms feasibility
AS7C33618B-366BIN 36-Mbit QDR-II+ SRAM (1 M × 36), 366 MHz, but uses SSTL-18 I/O instead of HSTL; no ZQ calibration Lacks echo clocks and QVLD; relies on FPGA-based capture logic; lower drive strength limits trace length Choose only if existing board uses SSTL-18 infrastructure and timing budget accommodates reduced timing margin

Compared with CY7C1264XV18-366BZXC, the -450BZXC offers higher bandwidth at the cost of stricter signal integrity requirements, while the AS7C33618B-366BIN trades HSTL precision and QVLD reliability for SSTL compatibility-making the original part optimal for new designs demanding robust high-speed interfacing.

Availability

CY7C1264XV18-366BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfacing, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C1264XV18-366BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, with global manufacturing, quality assurance, and long-term product support.

This device belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in networking, telecommunications, and high-end computing systems where concurrent read/write throughput is critical.

FAQ

What is the function of the DOFF pin?

The DOFF (PLL Turn Off) pin is an active-LOW control that disables the internal Phase-Locked Loop. When pulled LOW, the device operates in QDR-I mode with 1-cycle read latency and a maximum frequency of 167 MHz. For standard QDR-II+ operation at 366 MHz with 2.5-cycle latency, DOFF must be held HIGH via a ≤10 kΩ pull-up resistor to VDDQ.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ (≈48 Ω). This matching minimizes reflections on high-speed traces, ensuring clean eye diagrams at 366 MHz. Leaving ZQ unconnected or tied to GND violates specification and risks signal degradation.

Can CY7C1264XV18-366BZXC be used with a 1.5 V I/O supply?

Yes. The device supports VDDQ from 1.4 V to 1.6 V, making 1.5 V a fully compliant and commonly used I/O supply voltage. At 1.5 V, HSTL-compatible output drive strength and input thresholds meet JEDEC HSTL Class I specifications, ensuring interoperability with FPGAs and ASICs designed for that voltage.

What is the role of QVLD in system timing?

QVLD is a synchronous, edge-aligned output that pulses HIGH during each valid data transfer on Q[35:0]. It is timed to coincide with the rising edges of CQ and CQ, providing a hardware-confirmed indication of data readiness. This eliminates reliance on fixed delay assumptions and allows receivers to latch data precisely without complex deskew logic.

CY7C1264XV18-366BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
366 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1264XV18-366BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1264XV18-366BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1264XV18-366BZXC reliable?

The price and inventory of CY7C1264XV18-366BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1264XV18-366BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1264XV18-366BZXC transactions.

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CY7C1264XV18-366BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1264XV18-366BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1264XV18-366BZXC?

For technical support, including CY7C1264XV18-366BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1264XV18-366BZXC requirements.

6.How does Aetrix verify that CY7C1264XV18-366BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1264XV18-366BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1264XV18-366BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1264XV18-366BZXC?

All CY7C1264XV18-366BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1264XV18-366BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1264XV18-366BZXC part is unused and in its original packaging.

Return procedure for CY7C1264XV18-366BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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