Infineon Technologies CY7C1265KV18-450BZXC
- Part No.:
- CY7C1265KV18-450BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1265KV18-450BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:172
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Product details
Overview
CY7C1265KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II+ SRAM with 2.5-cycle read latency, 450 MHz clock operation (900 MT/s effective data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and QVLD data-valid signaling - deployed in high-bandwidth packet buffering for network line cards and telecom switching fabric.
For engineers reviewing the CY7C1265KV18 datasheet, CY7C1265KV18 pinout, CY7C1265KV18 application, or CY7C1265KV18 equivalent, key selection criteria include burst depth (four 36-bit words), DOFF-controlled latency mode (QDR I vs. QDR II+), byte write select granularity (BWS[3:0]), HSTL I/O compliance, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-speed PCB layout constraints.
Technical Context
This device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling concurrent access without bus turnaround. The internal PLL ensures precise data placement aligned to echo clocks CQ and CQ.
Read operations deliver four sequential 36-bit words per access with 2.5-cycle latency when DOFF = HIGH; write operations are self-timed and support byte-level granularity via BWS[3:0]. All I/O uses HSTL Class I inputs and variable-drive HSTL outputs, with ZQ-pin impedance calibration supporting 0.2×RQ output tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s effective throughput on DDR interfaces |
| Read Latency | 2.5 cycles (with DOFF = HIGH); 1 cycle (with DOFF = LOW, QDR I mode) |
| Core Supply Voltage | VDD = 1.8 V ± 0.1 V - defines logic threshold and power consumption envelope |
| I/O Supply Range | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V system buses |
| Burst Length | Four 36-bit words per access - reduces address bus toggling and simplifies controller design |
| Output Impedance Control | ZQ pin calibrates CQ, CQ, and Q[35:0] to 0.2×RQ - matches 50 Ω trace impedance for signal integrity |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Sampled on rising edges of K/K; 36-bit parallel input path for burst writes |
| Q[35:0] | Synchronous read data outputs | DDR-aligned outputs driven on K/K rising edges; tristated when RPS deasserted |
| RPS | Read port select (active LOW) | Enables read burst; sampled on K rising edge; controls Q[35:0] driver enable |
| WPS | Write port select (active LOW) | Initiates write burst; sampled on K rising edge; gates D[35:0] into memory array |
| BWS[3:0] | Byte write selects (active LOW) | Independent control of four 9-bit bytes; preserves unselected data during partial writes |
| K / K | Differential input clocks | Rising edges latch all synchronous inputs; define timing reference for DDR I/O |
| CQ / CQ | DDR echo clocks | Free-running, K/K-synchronized clocks for source-synchronous data capture at receiver |
| QVLD | Data validity indicator | Edge-aligned with CQ/CQ; signals when Q[35:0] carries valid burst data |
| DOFF | PLL disable (active LOW) | Switches device to QDR I mode (1-cycle latency, ≤167 MHz); disables PLL-based timing |
| ZQ | Output impedance calibration | Connects to external resistor to ground to set 0.2×RQ drive strength for CQ/CQ/Q outputs |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround overhead and avoids contention in full-duplex systems |
| Four-word burst architecture | Reduces address bus frequency by 4× versus single-word access - lowers routing complexity |
| 2.5-cycle read latency (DOFF = HIGH) | Optimizes throughput in high-clock-rate applications (e.g., 450 MHz) while maintaining determinism |
| HSTL Class I I/O with ZQ calibration | Ensures signal integrity on >500 Mbps DDR links; supports impedance-matched PCB traces |
| JTAG 1149.1 test access port | Enables boundary scan testing and in-system debug without additional test fixtures |
Applications
| Packet Buffering in 10G/25G Line Cards | High-Speed Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-port Ethernet switches operating at 10 Gbps or higher. IC Role / Device Role / Timing Role: Dual-port SRAM acting as shared buffer with simultaneous read (forwarding engine) and write (ingress parser) access. Use Value: 450 MHz clock + DDR I/O delivers 32.4 GB/s bandwidth - sufficient to sustain full line-rate traffic across multiple ports without head-of-line blocking. | Use Scenario: Interconnecting crossbar switch elements in telecom core routers where low-latency memory access determines switching matrix throughput. IC Role / Device Role / Timing Role: QDR II+ SRAM serving as distributed lookup table and context store for pipeline stages in non-blocking switch fabric. Use Value: 2.5-cycle deterministic latency and echo-clock–synchronized outputs enable sub-nanosecond timing closure in FPGA- or ASIC-based switch controllers. |
| Baseband Processing in 4G/LTE eNodeB | Real-Time Video Frame Buffering |
Use Scenario: Temporary storage of OFDM symbol buffers between FFT/IFFT processing blocks in wireless baseband units. IC Role / Device Role / Timing Role: Burst-access memory interfacing directly with DSP or FPGA accelerators performing channel estimation and equalization. Use Value: Four-word burst transfers match natural FFT block sizes; 1.4–1.8 V VDDQ range allows direct interface with 1.5 V FPGA I/O banks. | Use Scenario: Frame buffering for 4K60 video pipelines in broadcast encoders requiring zero-frame-drop reliability. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory staging uncompressed YUV422 frames between encoder and transport layers. Use Value: Concurrent read/write capability prevents frame tearing; QVLD signal enables precise frame boundary detection in real-time DMA engines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1265KV18-400BZXC | Lower max clock (400 MHz); identical pinout, timing, and feature set | Reduced bandwidth (28.8 GB/s vs. 32.4 GB/s); suitable for cost-sensitive designs with margin | Select when system clock tree limits to ≤400 MHz or thermal budget restricts higher-frequency operation |
| AS7C361024A-166BIN | Asynchronous SRAM; no DDR, no echo clocks, no QVLD; 166 MHz max; SOJ-54 package | Cannot support concurrent read/write or burst transfers; requires external handshake logic | Only viable for legacy upgrades where QDR architecture is not required and bandwidth demand < 1.2 GB/s |
Compared with CY7C1265KV18-400BZXC, the -450BZXC offers 12.5% higher bandwidth and tighter timing margins; versus AS7C361024A-166BIN, it provides true dual-port DDR operation, deterministic latency, and system-level signal integrity features essential for modern high-speed interconnects.
Availability
CY7C1265KV18-450BZXC is available at Aetrix Electronics and suitable for packet buffering in 10G/25G line cards, high-speed switch fabric memory, and baseband processing in 4G/LTE eNodeB requiring stable component supply across extended production lifecycles.
Supply support for CY7C1265KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II+ SRAM product line was designed specifically for high-throughput, low-latency networking and telecommunications infrastructure - emphasizing deterministic timing, concurrent access, and signal integrity at multi-GHz data rates.
FAQ
What is the function of the DOFF pin on CY7C1265KV18-450BZXC?
The DOFF (PLL Disable) pin controls the internal phase-locked loop. When pulled HIGH, the PLL is active and the device operates in QDR II+ mode with 2.5-cycle read latency at up to 450 MHz. When pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and a maximum frequency of 167 MHz. This pin must be externally biased - typically with a 10 kΩ pull-up resistor for normal operation.
How does the ZQ pin affect output drive strength?
The ZQ pin connects to an external resistor (RQ) tied to ground to calibrate the output impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ. For example, a 240 Ω resistor sets output impedance to 48 Ω, matching standard 50 Ω PCB traces. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (≈25 Ω). ZQ must never be left floating or connected to ground, as this disables calibration and risks signal integrity failure.
Can CY7C1265KV18-450BZXC perform partial writes without corrupting adjacent data?
Yes. The device supports byte-level write masking using BWS[3:0], each controlling a 9-bit segment of the 36-bit data bus. When a BWS signal is HIGH, the corresponding 9-bit byte is ignored during the write cycle, leaving stored data unchanged. This enables safe partial updates - for example, modifying only header fields in a packet buffer while preserving payload contents - without requiring read-modify-write sequences.
What is the role of QVLD in system timing design?
QVLD is a source-synchronous, edge-aligned indicator that asserts precisely when Q[35:0] carries valid data - synchronized to the rising edges of CQ and CQ. Unlike asynchronous ready signals, QVLD eliminates setup/hold uncertainty at the receiver, allowing FPGA or ASIC logic to sample Q[35:0] on the same clock edge that drives QVLD. This simplifies timing closure in >500 Mbps DDR links and removes the need for dynamic deskew logic.
CY7C1265KV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1265KV18-450BZXC FAQ
1.How can I place an order for CY7C1265KV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1265KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1265KV18-450BZXC reliable?
The price and inventory of CY7C1265KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1265KV18-450BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1265KV18-450BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1265KV18-450BZXC transactions.
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CY7C1265KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1265KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1265KV18-450BZXC?
For technical support, including CY7C1265KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1265KV18-450BZXC requirements.
6.How does Aetrix verify that CY7C1265KV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1265KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1265KV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1265KV18-450BZXC?
All CY7C1265KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1265KV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1265KV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C1265KV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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