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Infineon Technologies CY7C1265XV18-600BZXC

Part No.:
CY7C1265XV18-600BZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1265XV18-600BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,996

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Product details

Overview

CY7C1265XV18 from Infineon Technologies (formerly Cypress) is a 1 M × 36, 36-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 2.5-cycle read latency, 600 MHz clock operation, and DDR interfaces delivering 1200 MT/s effective data rate. It supports concurrent transactions in high-bandwidth networking buffers and packet classification engines.

For engineers reviewing the CY7C1265XV18 datasheet, CY7C1265XV18 pinout, CY7C1265XV18 application, or CY7C1265XV18 equivalent, key selection criteria include burst depth, DOFF-configurable latency mode, HSTL I/O compatibility, echo clock timing margining, and 165-ball FBGA mechanical fit for dense routing.

Technical Context

This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports sharing a multiplexed address bus. Each port uses rising edges of complementary K/K clocks for DDR data transfer, enabling true simultaneous access without bus turnaround.

The integrated PLL enables precise 2.5-cycle read latency at 600 MHz; when DOFF is asserted LOW, it reverts to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ align with output data edges to simplify capture in FPGA-based systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (1 M × 36 organization)
Max Clock Frequency600 MHz - sets maximum sustained bandwidth of 4.32 GB/s (36-bit × 1200 MT/s)
Read Latency2.5 cycles (PLL enabled); 1 cycle (DOFF = LOW) - directly impacts pipeline depth in switch fabric designs
I/O VoltageVDDQ = 1.4–1.6 V - compatible with 1.5 V HSTL-18 signaling for low-noise, high-speed interconnects
Core VoltageVDD = 1.8 V ± 0.1 V - defines power rail tolerance and decoupling requirements
Package165-ball FBGA (13 × 15 × 1.4 mm) - specifies board layout footprint and thermal pad constraints
Burst LengthFour-word burst - reduces address bus toggling frequency by 4× versus single-word access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free construction.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write Data Input Bus36-bit synchronous input sampled on K/K rising edges; supports byte-selectable writes via BWS[3:0]
Q[35:0]Read Data Output Bus36-bit DDR output driven on K/K rising edges; tristated automatically when RPS is deasserted
RPS / WPSPort Select ControlsActive-LOW synchronous enables for read/write ports - enables depth expansion and port isolation
BWS[3:0]Byte Write SelectFour independent active-LOW signals controlling 9-bit byte lanes; allows partial-word updates without read-modify-write
K / KDifferential Clock InputsComplementary clocks driving all synchronous logic; only rising edges used - simplifies clock tree design
CQ / CQEcho Clock OutputsFree-running outputs phase-aligned with Q[35:0] - eliminates setup/hold uncertainty in FPGA capture registers
QVLDData Valid IndicatorEdge-aligned with CQ/CQ; asserts one cycle before valid data appears on Q[35:0] - enables reliable strobe generation
DOFFPLL Disable ControlActive-LOW pin forcing QDR I timing mode; required for legacy system compatibility or reduced jitter scenarios
ZQImpedance Calibration InputConnects to external 240 Ω resistor to ground to tune output driver impedance to match 60 Ω trace impedance

Key Features

FeatureDesign Value
Separate Read/Write PortsEliminates bus turnaround delay - enables full-duplex memory access critical for line-rate packet buffering
Four-Word Burst ArchitectureReduces address bus frequency by 75% - lowers PCB routing complexity and EMI in high-density switch ASIC interfaces
HSTL-18 I/O BuffersSupports 1.5 V signaling with variable drive strength - ensures signal integrity across 10+ inch FR4 traces at 1200 MT/s
Integrated PLL with DOFF ControlEnables dynamic latency mode switching - allows same hardware to support both high-throughput (2.5-cycle) and low-jitter (QDR I) use cases
JTAG 1149.1 Test Access PortProvides boundary-scan visibility into all I/O pins - supports production test and debug without physical probe access

Applications

High-Speed Network Switch BufferTelecom Line Card Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches operating at 400G line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, synchronized to system clock domain via K/K inputs.

Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 2.5-cycle latency for real-time traffic shaping and priority queuing.

Use Scenario: Holding control-plane message queues and forwarding table entries in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: High-reliability memory node interfacing with TI C66x DSPs and Xilinx Ultrascale+ FPGAs using HSTL-18 I/O standards.

Use Value: Echo clocks CQ/CQ and QVLD enable zero-setup-capture in FPGA fabric, reducing timing closure effort by >30% versus source-synchronous alternatives.

Baseband Processing MemoryTest Equipment Pattern Generator

Use Scenario: Acting as frame buffer between RF front-end ADC/DAC and baseband processor in 5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Burst-mode SRAM absorbing variable-length IQ sample bursts while maintaining strict channel alignment across 64 antenna elements.

Use Value: Four-word burst reduces address bus toggling, lowering power consumption by ~40% compared to single-word SRAMs at equivalent throughput.

Use Scenario: Generating high-fidelity stimulus waveforms in automated semiconductor test systems requiring nanosecond-level timing precision.

IC Role / Device Role / Timing Role: Deterministic latency memory feeding pattern sequencers in ATE platforms, where DOFF pin configures QDR I mode for ultra-low jitter clock distribution.

Use Value: PLL disable capability provides sub-100 ps jitter floor essential for validating high-speed SerDes PHY compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-15JIN2 M × 18 configuration, 15 ns async access, no DDR or echo clocksLimited to lower-speed control-plane memory; lacks concurrent read/write capabilitySelect only if system requires asynchronous interface and can tolerate 10× lower bandwidth
IS61WV102432BLL-10TLI1 M × 32, 10 ns async, 3.3 V core/I/O, no burst or PLLSuitable for legacy backplane controllers but incompatible with HSTL-18 or 600 MHz timingChoose only for cost-sensitive industrial PLCs where speed and concurrency are non-critical

Compared with AS7C362000B-15JIN and IS61WV102432BLL-10TLI, CY7C1265XV18 delivers 4.3 GB/s bandwidth and true concurrent access-enabling real-time packet processing unattainable with asynchronous SRAMs-while its DOFF pin and echo clocks provide unique flexibility for mixed-timing-system integration.

Availability

CY7C1265XV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and 5G baseband processing requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1265XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and communications markets.

This device belongs to Infineon's QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic-latency, high-throughput memory subsystems in next-generation networking and wireless infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1265XV18?

The DOFF (PLL Turn Off) pin is an active-LOW control that disables the internal PLL. When grounded, the device operates in QDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. For normal QDR II+ operation at 600 MHz with 2.5-cycle latency, DOFF must be pulled HIGH via a ≤10 kΩ resistor to VDDQ. This pin enables hardware-selectable timing modes without firmware changes.

How does the ZQ pin affect signal integrity?

The ZQ pin calibrates output driver impedance by referencing an external 240 Ω resistor to ground, setting CQ, CQ, and Q[35:0] output impedance to 60 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances, minimizing reflections and ensuring clean eye diagrams at 1200 MT/s. Connecting ZQ directly to VDDQ enables minimum impedance mode (≈30 Ω), useful for short-trace, low-capacitance interconnects.

Can CY7C1265XV18 support partial writes without read-modify-write?

Yes. The device supports true byte-selectable writes via four active-LOW BWS[3:0] signals. BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. When a BWS signal is deasserted, the corresponding 9-bit byte lane is ignored during the write cycle, preserving existing data in those bits - eliminating need for external read-modify-write logic.

What is the role of CQ and CQ echo clocks in system timing?

CQ and CQ are free-running, edge-aligned echo clocks synchronized to the input K and K clocks. They replicate the timing relationship between K/K and Q[35:0] outputs, allowing FPGA or ASIC receivers to use CQ/CQ as capture clocks instead of K/K. This eliminates setup/hold timing violations caused by clock skew between K/K and Q[35:0], enabling reliable data capture at 1200 MT/s without complex deskew circuitry.

CY7C1265XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1265XV18-600BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1265XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1265XV18-600BZXC reliable?

The price and inventory of CY7C1265XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1265XV18-600BZXC is usually 5 days.

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Once your CY7C1265XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1265XV18-600BZXC?

For technical support, including CY7C1265XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1265XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C1265XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1265XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1265XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1265XV18-600BZXC?

All CY7C1265XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1265XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1265XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C1265XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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