Infineon Technologies CY7C1265XV18-600BZXC
- Part No.:
- CY7C1265XV18-600BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1265XV18-600BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1265XV18 from Infineon Technologies (formerly Cypress) is a 1 M × 36, 36-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 2.5-cycle read latency, 600 MHz clock operation, and DDR interfaces delivering 1200 MT/s effective data rate. It supports concurrent transactions in high-bandwidth networking buffers and packet classification engines.
For engineers reviewing the CY7C1265XV18 datasheet, CY7C1265XV18 pinout, CY7C1265XV18 application, or CY7C1265XV18 equivalent, key selection criteria include burst depth, DOFF-configurable latency mode, HSTL I/O compatibility, echo clock timing margining, and 165-ball FBGA mechanical fit for dense routing.
Technical Context
This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports sharing a multiplexed address bus. Each port uses rising edges of complementary K/K clocks for DDR data transfer, enabling true simultaneous access without bus turnaround.
The integrated PLL enables precise 2.5-cycle read latency at 600 MHz; when DOFF is asserted LOW, it reverts to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ align with output data edges to simplify capture in FPGA-based systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1 M × 36 organization) |
| Max Clock Frequency | 600 MHz - sets maximum sustained bandwidth of 4.32 GB/s (36-bit × 1200 MT/s) |
| Read Latency | 2.5 cycles (PLL enabled); 1 cycle (DOFF = LOW) - directly impacts pipeline depth in switch fabric designs |
| I/O Voltage | VDDQ = 1.4–1.6 V - compatible with 1.5 V HSTL-18 signaling for low-noise, high-speed interconnects |
| Core Voltage | VDD = 1.8 V ± 0.1 V - defines power rail tolerance and decoupling requirements |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - specifies board layout footprint and thermal pad constraints |
| Burst Length | Four-word burst - reduces address bus toggling frequency by 4× versus single-word access |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write Data Input Bus | 36-bit synchronous input sampled on K/K rising edges; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Read Data Output Bus | 36-bit DDR output driven on K/K rising edges; tristated automatically when RPS is deasserted |
| RPS / WPS | Port Select Controls | Active-LOW synchronous enables for read/write ports - enables depth expansion and port isolation |
| BWS[3:0] | Byte Write Select | Four independent active-LOW signals controlling 9-bit byte lanes; allows partial-word updates without read-modify-write |
| K / K | Differential Clock Inputs | Complementary clocks driving all synchronous logic; only rising edges used - simplifies clock tree design |
| CQ / CQ | Echo Clock Outputs | Free-running outputs phase-aligned with Q[35:0] - eliminates setup/hold uncertainty in FPGA capture registers |
| QVLD | Data Valid Indicator | Edge-aligned with CQ/CQ; asserts one cycle before valid data appears on Q[35:0] - enables reliable strobe generation |
| DOFF | PLL Disable Control | Active-LOW pin forcing QDR I timing mode; required for legacy system compatibility or reduced jitter scenarios |
| ZQ | Impedance Calibration Input | Connects to external 240 Ω resistor to ground to tune output driver impedance to match 60 Ω trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Separate Read/Write Ports | Eliminates bus turnaround delay - enables full-duplex memory access critical for line-rate packet buffering |
| Four-Word Burst Architecture | Reduces address bus frequency by 75% - lowers PCB routing complexity and EMI in high-density switch ASIC interfaces |
| HSTL-18 I/O Buffers | Supports 1.5 V signaling with variable drive strength - ensures signal integrity across 10+ inch FR4 traces at 1200 MT/s |
| Integrated PLL with DOFF Control | Enables dynamic latency mode switching - allows same hardware to support both high-throughput (2.5-cycle) and low-jitter (QDR I) use cases |
| JTAG 1149.1 Test Access Port | Provides boundary-scan visibility into all I/O pins - supports production test and debug without physical probe access |
Applications
| High-Speed Network Switch Buffer | Telecom Line Card Packet Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-terabit Ethernet switches operating at 400G line rates. IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, synchronized to system clock domain via K/K inputs. Use Value: Concurrent read/write eliminates arbitration stalls, enabling deterministic 2.5-cycle latency for real-time traffic shaping and priority queuing. | Use Scenario: Holding control-plane message queues and forwarding table entries in carrier-grade optical transport equipment. IC Role / Device Role / Timing Role: High-reliability memory node interfacing with TI C66x DSPs and Xilinx Ultrascale+ FPGAs using HSTL-18 I/O standards. Use Value: Echo clocks CQ/CQ and QVLD enable zero-setup-capture in FPGA fabric, reducing timing closure effort by >30% versus source-synchronous alternatives. |
| Baseband Processing Memory | Test Equipment Pattern Generator |
Use Scenario: Acting as frame buffer between RF front-end ADC/DAC and baseband processor in 5G massive MIMO radio units. IC Role / Device Role / Timing Role: Burst-mode SRAM absorbing variable-length IQ sample bursts while maintaining strict channel alignment across 64 antenna elements. Use Value: Four-word burst reduces address bus toggling, lowering power consumption by ~40% compared to single-word SRAMs at equivalent throughput. | Use Scenario: Generating high-fidelity stimulus waveforms in automated semiconductor test systems requiring nanosecond-level timing precision. IC Role / Device Role / Timing Role: Deterministic latency memory feeding pattern sequencers in ATE platforms, where DOFF pin configures QDR I mode for ultra-low jitter clock distribution. Use Value: PLL disable capability provides sub-100 ps jitter floor essential for validating high-speed SerDes PHY compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C362000B-15JIN | 2 M × 18 configuration, 15 ns async access, no DDR or echo clocks | Limited to lower-speed control-plane memory; lacks concurrent read/write capability | Select only if system requires asynchronous interface and can tolerate 10× lower bandwidth |
| IS61WV102432BLL-10TLI | 1 M × 32, 10 ns async, 3.3 V core/I/O, no burst or PLL | Suitable for legacy backplane controllers but incompatible with HSTL-18 or 600 MHz timing | Choose only for cost-sensitive industrial PLCs where speed and concurrency are non-critical |
Compared with AS7C362000B-15JIN and IS61WV102432BLL-10TLI, CY7C1265XV18 delivers 4.3 GB/s bandwidth and true concurrent access-enabling real-time packet processing unattainable with asynchronous SRAMs-while its DOFF pin and echo clocks provide unique flexibility for mixed-timing-system integration.
Availability
CY7C1265XV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, telecom line card packet memory, and 5G baseband processing requiring stable component supply and long-term lifecycle assurance.
Supply support for CY7C1265XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and communications markets.
This device belongs to Infineon's QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic-latency, high-throughput memory subsystems in next-generation networking and wireless infrastructure equipment.
FAQ
What is the function of the DOFF pin on CY7C1265XV18?
The DOFF (PLL Turn Off) pin is an active-LOW control that disables the internal PLL. When grounded, the device operates in QDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. For normal QDR II+ operation at 600 MHz with 2.5-cycle latency, DOFF must be pulled HIGH via a ≤10 kΩ resistor to VDDQ. This pin enables hardware-selectable timing modes without firmware changes.
How does the ZQ pin affect signal integrity?
The ZQ pin calibrates output driver impedance by referencing an external 240 Ω resistor to ground, setting CQ, CQ, and Q[35:0] output impedance to 60 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances, minimizing reflections and ensuring clean eye diagrams at 1200 MT/s. Connecting ZQ directly to VDDQ enables minimum impedance mode (≈30 Ω), useful for short-trace, low-capacitance interconnects.
Can CY7C1265XV18 support partial writes without read-modify-write?
Yes. The device supports true byte-selectable writes via four active-LOW BWS[3:0] signals. BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. When a BWS signal is deasserted, the corresponding 9-bit byte lane is ignored during the write cycle, preserving existing data in those bits - eliminating need for external read-modify-write logic.
What is the role of CQ and CQ echo clocks in system timing?
CQ and CQ are free-running, edge-aligned echo clocks synchronized to the input K and K clocks. They replicate the timing relationship between K/K and Q[35:0] outputs, allowing FPGA or ASIC receivers to use CQ/CQ as capture clocks instead of K/K. This eliminates setup/hold timing violations caused by clock skew between K/K and Q[35:0], enabling reliable data capture at 1200 MT/s without complex deskew circuitry.
CY7C1265XV18-600BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 600 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1265XV18-600BZXC FAQ
1.How can I place an order for CY7C1265XV18-600BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1265XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1265XV18-600BZXC reliable?
The price and inventory of CY7C1265XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1265XV18-600BZXC is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C1265XV18-600BZXC?
For technical support, including CY7C1265XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1265XV18-600BZXC requirements.
6.How does Aetrix verify that CY7C1265XV18-600BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1265XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1265XV18-600BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1265XV18-600BZXC?
All CY7C1265XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1265XV18-600BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1265XV18-600BZXC part is unused and in its original packaging.
Return procedure for CY7C1265XV18-600BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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