Infineon Technologies CY7C12681KV18-400BZXC
- Part No.:
- CY7C12681KV18-400BZXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C12681KV18-400BZXC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C12681KV18 from Cypress Semiconductor is a 36-Mbit DDR II+ SRAM with 2 M × 18 organization, 550 MHz max clock frequency, 2.5-cycle read latency, and HSTL I/O interface operating at VDDQ = 1.4–1.8 V. It delivers 1100 MT/s data throughput via double-data-rate transfers synchronized to K/K clocks and supports echo-clock–assisted data capture in high-speed networking and packet buffering systems.
For engineers reviewing the CY7C12681KV18 datasheet, CY7C12681KV18 pinout, CY7C12681KV18 application, or CY7C12681KV18 equivalent, this device is selected for synchronous burst memory subsystems requiring precise timing alignment, low-latency pipelined reads, and impedance-matched DDR signaling in FPGA-attached buffer designs.
Technical Context
This SRAM implements a synchronous pipelined architecture with dual-edge–referenced DDR II+ interface: address and control signals latch on alternating rising edges of K and K, while write data registers on both K and K edges and read data drives on both edges. The internal 2-word burst mode reduces address bus toggling frequency by half relative to data rate.
It integrates an on-chip PLL for accurate data placement, echo clocks (CQ/CQ) aligned to output data edges, and QVLD to indicate valid data windows. DOFF pin selects between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes - enabling compatibility with both DDR II+ and legacy DDR I timing protocols.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 36 Mbit (2 M × 18), enabling 18-bit wide data path with 2 M addressable locations |
| Max Clock Frequency | 400 MHz (K/K), supporting 800 MT/s effective data rate per DQ line |
| Read Latency | 2.5 cycles (DOFF = HIGH), delivering first valid data 2.5 K-clock periods after address load |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V, compatible with both 1.5 V and 1.8 V HSTL-18 systems |
| Core Voltage | VDD = 1.8 V ± 0.1 V, defining strict supply regulation requirement for stable SRAM operation |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm), 0.8 mm ball pitch, RoHS-compliant |
| Power Consumption | 590 mA max ICC at 400 MHz (2 M × 18 config), critical for thermal budgeting in dense memory modules |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data I/O | 18-bit DDR data bus; inputs sampled on rising edges of K/K; outputs driven on both edges with echo-clock alignment |
| K, K | Differential input clocks | Primary timing references - all synchronous operations (address, R/W, BWS, LD) edge-triggered on K or K rising edges |
| CQ, CQ | Output echo clocks | Free-running, phase-aligned copies of K/K used by system logic to capture DQ data without skew compensation |
| QVLD | Valid data indicator | Asserted synchronously with CQ/CQ edges to mark exact window of valid DQ output data during reads |
| BWS[1:0] | Byte write select inputs | Active-low controls for 9-bit byte segments: BWS0 enables DQ[8:0], BWS1 enables DQ[17:9] during writes |
| LD | Load strobe | Synchronous enable for address/control latching; must be LOW during K-edge–sampled bus cycle definition |
| DOFF | Latency mode select | HIGH → 2.5-cycle read latency; LOW → 1-cycle read latency; determines DDR II+ vs DDR I timing behavior |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to ground; calibrates output driver strength to match 60 Ω system trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Halves required address transition rate versus single-word access, reducing routing congestion and timing closure effort |
| On-chip PLL with echo clocks | Eliminates need for external delay-locked loops or board-level trace length matching for data capture |
| Programmable read latency (1 or 2.5 cycles) | Enables drop-in replacement in existing DDR I designs while supporting higher-performance DDR II+ timing in new systems |
| HSTL-18 I/O with ZQ calibration | Ensures consistent 60 Ω output impedance across voltage/temperature/process, minimizing signal integrity margin loss |
| JTAG 1149.1 test access port | Supports boundary scan testing of interconnects in high-density memory subsystems without additional test fixtures |
Applications
| High-Speed Packet Buffering | FPGA-Based Protocol Acceleration |
|---|---|
|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet headers and payloads in network switches and routers. IC Role / Device Role / Timing Role: Synchronous burst-access SRAM serving as first-level packet memory with deterministic 2.5-cycle read response. Use Value: QVLD and echo clocks enable reliable data capture at 800 MT/s without per-pin deskew, reducing FPGA logic overhead by ~15%. |
Use Scenario: Real-time header parsing and modification in reconfigurable acceleration engines using Xilinx Ultrascale+ or Intel Stratix 10 FPGAs. IC Role / Device Role / Timing Role: Low-latency, wide-bus memory for lookup tables and temporary packet staging with parallel 18-bit access. Use Value: 2 M × 18 organization matches common FPGA BRAM column widths, minimizing glue logic and improving area efficiency. |
| Telecom Baseband Processing | Industrial Real-Time Control Memory |
|
Use Scenario: Inter-stage buffering in 5G NR baseband processing chains requiring sub-10 ns timing predictability. IC Role / Device Role / Timing Role: DDR II+ SRAM interfacing directly to ASIC or FPGA baseband processors with K/K clock domain separation. Use Value: DOFF-selectable latency allows tuning to match specific pipeline stages - 1-cycle for inner loops, 2.5-cycle for outer buffers. |
Use Scenario: Deterministic data logging and motion profile storage in servo drive controllers with tight jitter budgets. IC Role / Device Role / Timing Role: Synchronous memory for time-stamped encoder samples and command history with guaranteed read availability. Use Value: 1.8 V core + 1.4–1.8 V I/O supports mixed-voltage industrial PCBs while maintaining < 2 ns clock-to-out jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C12681KV18-333BZXC | Lower max clock (333 MHz vs 400 MHz); identical 2 M × 18 organization, pinout, and feature set | Targeted at cost-sensitive systems where 667 MT/s bandwidth suffices and thermal headroom is constrained | Select when system clock tree operates ≤ 333 MHz and power envelope limits ICC to ≤ 520 mA |
| AS7C3256A-15JCIN | Asynchronous 32K × 8 SRAM; no DDR, no echo clocks, no PLL; 15 ns access, 3.3 V only | Suitable for legacy microcontroller-based control memory, not for high-speed burst interfaces | Choose only for non-pipelined, low-bandwidth applications where timing simplicity outweighs performance needs |
Compared with CY7C12681KV18-333BZXC, the -400BZXC variant provides 20% higher bandwidth and 12% higher current draw; versus AS7C3256A-15JCIN, it enables full DDR timing compliance and eliminates asynchronous setup/hold constraints but requires precise clock distribution.
Availability
CY7C12681KV18-400BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, FPGA-based protocol acceleration, telecom baseband processing, and industrial real-time control applications requiring stable component supply across multi-year production cycles.
Supply support for CY7C12681KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.
This device belongs to the DDR II+ SRAM product line, engineered specifically for deterministic, low-jitter, burst-mode memory interfacing in FPGA- and ASIC-based high-speed data path applications.
FAQ
What is the function of the DOFF pin on CY7C12681KV18-400BZXC?
The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for DDR II+ operation; when LOW, it configures the device for 1-cycle latency compatible with DDR I timing. This pin is sampled synchronously on the rising edge of K and remains latched until next reset or power cycle.
Can CY7C12681KV18-400BZXC operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal. At 1.5 V, HSTL-18 output drivers maintain specified VOH/VOL levels and AC timing parameters per datasheet Table 22, provided VDD remains at 1.8 V ± 0.1 V and temperature stays within –40 °C to +85 °C.
How does the ZQ pin affect signal integrity?
ZQ connects to a 240 Ω resistor to ground and calibrates internal output driver impedance to 60 Ω (0.2 × 240 Ω), matching standard PCB trace impedances. This calibration occurs at power-up and can be retriggered via JTAG, ensuring consistent edge rates and reduced reflections across voltage and temperature variations.
Is the 165-ball FBGA package lead-free?
Yes - the -400BZXC suffix denotes a Pb-free, RoHS-compliant 165-ball FBGA package. Cypress confirms this variant uses matte tin surface finish and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), requiring bake condition prior to reflow if exposed beyond floor life.
CY7C12681KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C12681KV18-400BZXC FAQ
1.How can I place an order for CY7C12681KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C12681KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C12681KV18-400BZXC reliable?
The price and inventory of CY7C12681KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C12681KV18-400BZXC is usually 5 days.
3.What payment methods are accepted for CY7C12681KV18-400BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C12681KV18-400BZXC transactions.
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4.How is shipping managed for CY7C12681KV18-400BZXC?
CY7C12681KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C12681KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C12681KV18-400BZXC?
For technical support, including CY7C12681KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C12681KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C12681KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C12681KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C12681KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C12681KV18-400BZXC?
All CY7C12681KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C12681KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C12681KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C12681KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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